Abstract: Disclosed is a light emitting device according to the embodiment including a conductive semiconductor layer divided into at least two or more light emitting regions; a plurality of light emitting structures on the conductive semiconductor layer; an electrode layer on the plurality of light emitting structures; a second electrode electrically connected to the electrode layer; and a first electrode electrically connected to the conductive semiconductor layer, wherein each of the light emitting structures includes a rod-shaped first conductivity type semiconductor, an active layer configured to surround the first conductivity type semiconductor and a second conductivity type semiconductor configured to surround the active layer, and each of the light emitting structures has at least two or more outer surfaces having different extending directions with respect to an upper surface of the conductive semiconductor layer.

Abstract: A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.