Abstract: The present disclosure relates to an antibody binding specifically to CD55 or an antigen-binding fragment thereof; and a composition for preventing, treating and/or diagnosing cancer containing the same. The antibody of the present disclosure may be used as an effective therapeutic composition for various CD55-mediated diseases since it shows high binding ability and inhibitory effect for the CD55 protein which promotes tumor growth by inhibiting the complement immune mechanism. In addition, the antibody of the present disclosure may be usefully used as an effective therapeutic adjuvant that fundamentally removes drug resistance and remarkably improves therapeutic responsiveness in various diseases in which resistance to therapeutic agents with CDC (complement-dependent cytotoxicity) as a mechanism of action has been induced due to overexpression of CD55.

Abstract: A display device according to an exemplary embodiment includes a substrate including a display area and a non-display area. An alignment mark is positioned in the non-display area. A protective layer is positioned around the alignment mark in the non-display area and separated from the alignment mark in a direction parallel to an upper surface of the substrate. A supporting member is positioned between the alignment mark and the protective layer.

Abstract: A thin film transistor substrate, a display device including the same, and a method of manufacturing a thin film transistor substrate. The thin film transistor substrate includes: a base plate including a first area and a second area; a nano uneven pattern formed on one side of the base plate in the first area; a wire grid pattern formed on the ne side of the base plate in the second area; a gate electrode disposed on and overlapping the wire grid pattern; and one of a source electrode and a drain electrode disposed on the gate electrode and overlapping the wire grid pattern.

Abstract: A display device according to an exemplary embodiment includes a substrate including a display area and a non-display area. An alignment mark is positioned in the non-display area. A protective layer is positioned around the alignment mark in the non-display area and separated from the alignment mark in a direction parallel to an upper surface of the substrate. A supporting member is positioned between the alignment mark and the protective layer.

Abstract: A thin film transistor substrate, a display device including the same, and a method of manufacturing a thin film transistor substrate. The thin film transistor substrate includes: a base plate including a first area and a second area; a nano uneven pattern formed on one side of the base plate in the first area; a wire grid pattern formed on the ne side of the base plate in the second area; a gate electrode disposed on and overlapping the wire grid pattern; and one of a source electrode and a drain electrode disposed on the gate electrode and overlapping the wire grid pattern.

Abstract: An electrostatic chuck for manufacturing a flat panel display is disclosed. In one embodiment, the electrostatic chuck includes i) a base substrate, ii) an insulating layer formed on the base substrate and iii) a conductive layer formed on the insulating layer and electrically connected to a power device. The electrostatic chuck further includes a dielectric layer formed on the conductive layer and including an emboss part and a trench part surrounding the emboss part. The emboss part comprises a plurality of contact parts and at least one protrusion. The trench part includes at least one channel. The contact parts and the protrusion have different shapes. The electrostatic chuck further includes a cooling gas line extending through the base substrate, the insulating layer, the conductive layer, and the dielectric layer.

Abstract: An organic light emitting display device capable of preventing outgassing from a pixel defining layer (PDL) or a planarization layer and method of manufacturing the same.

Abstract: An electrostatic chuck for manufacturing a flat panel display is disclosed. In one embodiment, the electrostatic chuck includes i) a base substrate, ii) an insulating layer formed on the base substrate and iii) a conductive layer formed on the insulating layer and electrically connected to a power device. The electrostatic chuck further includes iv) a dielectric layer formed on the conductive layer and comprising an emboss part and a trench part, wherein the emboss part comprises at least one protrusion, and wherein the trench part comprises at least one channel and surrounds the emboss part and v) a cooling gas line extending through the base substrate, the insulating layer, the conductive layer, and the dielectric layer.

Abstract: An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

Abstract: A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.

Abstract: An organic light emitting display device capable of preventing outgassing from a pixel defining layer (PDL) or a planarization layer and method of manufacturing the same.

Abstract: A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.

Abstract: An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

Abstract: Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.

Abstract: A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.

Abstract: A method for removing static electricity from a first plate in a processing chamber including a substrate on the first plate and a second plate opposite the first plate, the method includes generating static electricity in the first plate to adhere the substrate to the first plate, and supplying argon gas into the processing chamber to remove the static electricity.

Abstract: A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.