Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a storage controller. The storage controller includes a command and address generator, an error detection module, and an interface circuit. The command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. The error detection module generates the error detection signal from the first command and the address. The interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. The first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.

Abstract: A mobile terminal including an antenna according to an embodiment is provided. The mobile terminal includes a slide metal part and a front metal part, and a contact member configured to contact the slide metal part and the front metal part is provided on a side of the front metal part. In a first state in which a display area of the mobile terminal is contracted, the contact member may remove parasitic resonance caused by a slot area, as the slide metal part and the front metal part contact are contacted by the contact member at a first position which is a lower end of the slot area, and in a second state in which the display area is expanded, the contact member may remove parasitic resonance caused by the slot area, as the slide metal part and the front metal part are contacted by the contact member at a second position which is an upper end of the slot area.

Abstract: A mobile terminal including an antenna according to an embodiment is provided. The mobile terminal includes a slide metal part and a front metal part, and a contact member configured to contact the slide metal part and the front metal part is provided on a side of the front metal part. In a first state in which a display area of the mobile terminal is contracted, the contact member may remove parasitic resonance caused by a slot area, as the slide metal part and the front metal part contact are contacted by the contact member at a first position which is a lower end of the slot area, and in a second state in which the display area is expanded, the contact member may remove parasitic resonance caused by the slot area, as the slide metal part and the front metal part are contacted by the contact member at a second position which is an upper end of the slot area.

Abstract: A mobile terminal having an antenna according to one embodiment is provided. The mobile terminal comprises: a first metal housing having a left side surface and a right side surface that define the exterior; and a second metal housing having a left side surface, a right side surface, and a bottom side surface that define the exterior. A first conductive member and a second conductive member of the second metal housing each include a first sub member disposed on a lower side surface and a second sub member disposed on a left side surface or a right side surface; the left side surface of the first metal housing and the second sub member of the second metal housing overlap; the overlapping first metal housing is not exposed to the exterior, while the second sub member may be exposed to the exterior.

Abstract: A plasma sensor module may include an upper substrate, a lower substrate, at least one probe and a printed circuit board (PCB). The upper substrate may be configured to be exposed to plasma. The lower substrate may contact a lower surface of the upper substrate. The lower substrate may have a thickness that is thicker than a thickness of the upper substrate. The probe may be in the lower substrate. The PCB may be in the lower substrate. The PCB may be configured to apply an alternating current to the probe to detect a density of the plasma. Thus, the structural strength of the plasma sensor module may have improved structural strength.

Abstract: Disclosed is a photomask. The photomask comprises a substrate, a reflective layer on the substrate, and an absorption structure on the reflective layer. The absorption structure comprises absorption patterns spaced apart from each other on the reflective layer. The absorption structure may include dummy holes in at least one of the absorption patterns. The dummy holes exhaust hydrogen from the absorption structure. The photomask may include a barrier layer on the absorption structure. The barrier layer may reduce the amount of hydrogen entering the absorption structure.

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Abstract: A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Abstract: A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.

Abstract: Disclosed is a photomask. The photomask comprises a substrate, a reflective layer on the substrate, and an absorption structure on the reflective layer. The absorption structure comprises absorption patterns spaced apart from each other on the reflective layer. The absorption structure may include dummy holes in at least one of the absorption patterns. The dummy holes exhaust hydrogen from the absorption structure. The photomask may include a barrier layer on the absorption structure. The barrier layer may reduce the amount of hydrogen entering the absorption structure.

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Abstract: A method of manufacturing a pellicle membrane includes forming a silicon layer on a substrate, forming a mask pattern on the silicon layer, and performing a wet etching process on the silicon layer exposed by the mask pattern to form silicon patterns with an uneven structure. A contact area between the silicon patterns and the substrate may be larger than that between the silicon patterns and the mask pattern, and each of the silicon patterns may be formed in such a way that a side surface thereof has an ascending slope in a vertical direction oriented from the substrate toward the mask pattern and is a crystal plane of (111).