Abstract: The present invention provides an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple, petal flare, and curl.

Abstract: Disclosed are an aluminum-coated blank, a manufacturing method thereof, and an apparatus for manufacturing the same. The blank includes two or more aluminum-coated steel sheets connected together by a joint, each of the steel sheets including: a base steel sheet including 0.01-0.5 wt % of carbon, 0.01-1.0 wt % of silicon, 0.5-3.0 wt % of manganese, greater than 0 but not greater than 0.05 wt % of phosphorus, greater than 0 but not greater than 0.01 wt % of sulfur, greater than 0 but not greater than 0.1 wt % of aluminum, greater than 0 but not greater than 0.001 wt % of nitrogen, and the balance of iron and other inevitable impurities; and a coating layer including aluminum and formed on at least one surface of the base steel sheet.

Abstract: There is provided a camera module including a plurality of ball bearings to support the driving of a lens barrel at the time of compensating for unintended camera movement due to disturbance such as hand shake. The lens barrel may be driven in first and second directions, independently, by one driving force exerted in the first direction perpendicular to an optical axis and by another driving force exerted in the second direction perpendicular to both the optical axis and the first direction, thereby preventing driving displacement from being generated at the time of compensating for unwanted motion such as hand shake while securing reliability against external impact, and having reduced power consumption at the time of compensating for the disturbance.

Abstract: A condensate water drain control system for fuel cells includes a fuel cell stack configured to generate electric power through chemical reaction, a fuel supply line configured to recirculate fuel discharged from the fuel cell stack together with fuel introduced from a fuel supply valve, a water trap located in the fuel supply line, the water trap being configured to collect condensate water discharged from the fuel cell stack, a drain valve configured to discharge the condensate water stored in the water trap to the outside when opened, and a drain controller configured to determine whether the fuel supply valve is controlled such that pressure in the fuel supply line is maintained before the drain valve is opened and to sense discharge of fuel from the fuel supply line through the drain valve upon determining that the pressure is maintained.

Abstract: The present disclosure relates to a photoelectrochemical photoelectrode for water splitting, which includes a plate-type photoelectrode including a transparent electrode substrate and a photoanode layer disposed on the transparent electrode substrate, wherein the plate-type photoelectrode exists in a plural number, and the plural plate-type photoelectrodes are disposed in such a manner that the transparent electrode substrate of one photoelectrode may face the photoanode layer of the other photoelectrode, while being spaced apart from each other. In this manner, it is possible to scale-up the photoelectrochemical photoelectrode for water splitting, while providing improved water splitting performance.

Abstract: A SONOS device and a method of manufacturing the same is provided. A tunnel dielectric layer, a charge trap layer, and a charge blocking layer are formed on a semiconductor substrate, and the charge blocking layer is formed on the charge trap layer such that the charge blocking layer is relatively thicker at regions adjacent to or overlapping the source and the drain and relatively thinner at a region overlapping the channel region. A gate is then formed on the blocking layer.

Abstract: A SONOS device and a method of manufacturing the same is provided. A tunnel dielectric layer, a charge trap layer, and a charge blocking layer are formed on a semiconductor substrate, and the charge blocking layer is formed on the charge trap layer such that the charge blocking layer is relatively thicker at regions adjacent to or overlapping the source and the drain and relatively thinner at a region overlapping the channel region. A gate is then formed on the blocking layer.

Abstract: A fabricating method of a nonvolatile memory device is disclosed. A disclosed method comprises: implanting ions into an active region of a semiconductor substrate to form a well of a low voltage transistor and adjust its threshold voltage; implanting ions into an active region of the semiconductor substrate to form a well of a high voltage transistor and adjust its threshold voltage, thereby forming a conductive region; depositing an ONO layer on the semiconductor substrate; patterning and etching the ONO layer to form an ONO structure; and forming a gate oxide layer on the semiconductor substrate.

Abstract: A SONOS device and a method of manufacturing the same is provided. A tunnel dielectric layer, a charge trap layer, and a charge blocking layer are formed on a semiconductor substrate, and the charge blocking layer is formed on the charge trap layer such that the charge blocking layer is relatively thicker at regions adjacent to or overlapping the source and the drain and relatively thinner at a region overlapping the channel region. A gate is then formed on the blocking layer.

Abstract: Non-volatile SRAMs having an improved recall characteristic are disclosed. An illustrated non-volatile SRAM includes a plurality of unit memory cells arranged in an array. Each of the plurality of unit memory cells comprises a SRAM unit and a non-volatile circuit. The non-volatile circuit includes storage transistors, SONOS transistors connected to the storage transistors, and recall transistors connected to the SONOS transistors. The thickness of the gate insulation films of the recall transistors is thinner than the thickness of the gate insulation films of the storage transistors.

Abstract: Disclosed is a thin film transistor formed on a substrate, comprising a patterned gate electrode formed on said substrate; a channel layer formed around said gate electrode with a gate insulating layer interposed therebetween; a interlayer insulating layer formed on said channel layer; and source and drain electrodes formed on both side walls of said channel layer and on both side portions of said interlayer insulating layer, and isolated from each other. Each of the channel and source/drain layers is composed of polysilicon with impurity ions. In the thin film transistor, because each of the source and drain electrodes is formed relatively thicker than the channel layer, them can be significantly reduced in resistance.