Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

Abstract: An image sensing device includes a substrate structured to include a first surface on a first side of the substrate and a second surface on a second side of the substrate opposite to the first side and to further include a first active region and a second active region in a portion of the substrate near the second surface, at least one photoelectric conversion element formed in the substrate, and structured to generate photocharges by performing photoelectric conversion of incident light received through the first surface of the substrate, a floating diffusion region formed near the second surface of the substrate, and structured to receive the photocharges from the photoelectric conversion element and temporarily store the received photocharges, a transistor formed in the first active region, and structured to include a first source/drain region coupled to the floating diffusion region, and a well pickup region formed in the second active region, and structured to apply a bias voltage to the substrate.

Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.

Abstract: An image sensing device includes a substrate, a first reflector, and at least one second reflector. The substrate includes a photoelectric conversion element corresponding to each unit pixel. The first reflector is disposed in a manner that at least some parts of the first reflector overlap with the photoelectric conversion element, and is configured to reflect incident light directed to the photoelectric conversion element in a direction away from the photoelectric conversion element. The second reflect disposed over the substrate is configured to reflect the incident light reflected by the first reflector in a direction along which the incident light moves again closer to the photoelectric conversion element.

Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

Abstract: The technology disclosed in this patent document can be implemented in embodiments to provide an image sensor that includes a first phase difference detection pixel having a light receiving region shifted by a first displacement distance, and a second phase difference detection pixel having a light receiving region shifted by a second displacement distance in a second direction opposite to the first direction, wherein the first and second phase difference detection pixels are structured to detect phase difference information of incident light for controlling focusing of incident light at the imaging pixels for image sensing by the imaging pixels, and each of the first phase difference detection pixel and the second phase difference detection pixel includes an antireflection layer structured to partially cover a microlens, in the light receiving region.

Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

Abstract: An image sensor may include a pixel array including different pixel blocks where a pixel block includes a block of adjacent unit pixels each unit responsive to light to produce photo-generated charges, a floating diffusion region disposed at a center of each unit pixel to receive the photo-generated charges, and transfer gates formed between the floating diffusion region and the unit pixel to control the transfer of the photo-generated charges. Each the pixel block may include an extra floating diffusion region at a center of the pixel block to interface with each of the adjacent unit pixels with the pixel block to photo-generated charges from each of the adjacent unit pixels and extra transfer gates that are formed between the extra floating diffusion region and the adjacent unit pixels to control the transfer of the photo-generated charges from the adjacent unit pixels to the extra floating diffusion region.

Abstract: An image sensor may include: a pixel array having a plurality of unit pixels arranged in a matrix structure; and an optical filter overlapping the pixel array, and capable of blocking incident light irradiated on the plurality of unit pixels arranged in each row in the pixel array.

Abstract: An image sensor may include a pixel array including different pixel blocks where a pixel block includes a block of adjacent unit pixels each unit responsive to light to produce photo-generated charges, a floating diffusion region disposed at a center of each unit pixel to receive the photo-generated charges, and transfer gates formed between the floating diffusion region and the unit pixel to control the transfer of the photo-generated charges. Each the pixel block may include an extra floating diffusion region at a center of the pixel block to interface with each of the adjacent unit pixels with the pixel block to photo-generated charges from each of the adjacent unit pixels and extra transfer gates that are formed between the extra floating diffusion region and the adjacent unit pixels to control the transfer of the photo-generated charges from the adjacent unit pixels to the extra floating diffusion region.

Abstract: An image sensor may include: a pixel array having a plurality of unit pixels arranged in a matrix structure; and an optical filter overlapping the pixel array, and capable of blocking incident light irradiated on the plurality of unit pixels arranged in each row in the pixel array.

Abstract: A solid-state imaging device into which is integrated an optical low pass filter serving as the transparent window thereof, this integrated structure simplifying the configuration of the imaging system, reducing its size and manufacturing cost. The optical low pass filter is configured of an optical phase grating low pass filter to obtain satisfactory frequency characteristics. The optical low pass filter is constructed in such a manner that a grating with a predetermined thickness, generating the phase shift of &phgr;, a grating whose thickness is twice the &phgr;-phase shift grating, generating the phase shift of 2&phgr;, and a grating portion generating the phase shift of 0 form a basic pattern, the basic pattern being periodically arranged.

Abstract: There is provided an optical low pass filter passing only a lower spatial frequency using a phase grating and the structure of the grating. The optical low pass filter utilizes the two-dimensionally arranged phase grating for the purpose of removing an image with a higher spatial frequency in an imaging system employing a semiconductor solid-state imaging device such as CCD image sensor or CMOS image sensor, The optical low pass filter which suppresses a spatial frequency component higher than a specific frequency and passes a component lower than the specific frequency in an imaging system sensing input images includes a grating generating the phase shift of 0, a grating generating the phase shift of &phgr;, arranged at the right and bottom of the 0-phase shift grating, and a grating generating the phase shift of 2&phgr;, arranged at the diagonal side of the 0-phase shift grating.