Abstract: A method of fabricating a semiconductor device includes forming a first vertical pillar over a semiconductor substrate. A spacer is formed over a sidewall of the first vertical pillar. A portion of the semiconductor substrate exposed between the first vertical pillars is etched to form a recess that exposes a second vertical pillar extending below from the first vertical pillar. A sacrificial film is formed over the semiconductor substrate including the recess and a sidewall of the first vertical pillar to fill the recess, the second vertical pillar and the first vertical pillar. A supporting layer is deposited over the sacrificial film and the first vertical pillar. The supporting layer is patterned to form a supporting pattern connecting the first vertical pillar with each other. The sacrificial film is removed to expose the second vertical pillar. A surrounding gate is formed over a sidewall of the second vertical pillar.