Patents by Inventor Sung-Yean Yoon

Sung-Yean Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing protection film of light-emitting element
    Patent number: 11118266
    Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: September 14, 2021
    Assignee: TES CO., LTD
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee
  • Passivation film deposition method for light-emitting diode
    Patent number: 10777777
    Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: September 15, 2020
    Assignee: TES CO., LTD
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee
  • Method for depositing protection film of light-emitting element
    Patent number: 10461282
    Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: October 29, 2019
    Assignee: TES CO., LTD
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee
  • Method For Depositing Protection Film Of Light-Emitting Element
    Publication number: 20190078208
    Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 14, 2019
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee
  • Method For Depositing Protection Film Of Light-Emitting Element
    Publication number: 20190081283
    Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 14, 2019
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee
  • Passivation Film Deposition Method For Light-Emitting Diode
    Publication number: 20190019996
    Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
    Type: Application
    Filed: September 7, 2018
    Publication date: January 17, 2019
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee