Abstract: A color filter substrate and a display panel are provided. The color filter substrate includes a substrate, first spacers, second spacers, color resist patterns, and at least one dummy-color resist pattern. A first area has a first projection area A. A second area has a second projection area B. The color resist patterns are disposed at least partially around of at least one of the first spacers. A covering area of the color resist patterns in the first area is a. (a/A)*100% is defined as a first coverage rate M. The dummy-color resist pattern is disposed at least partially around of at least one of the second spacers. The covering area of the dummy-color resist pattern in the second area is b. (b/B)*100% is defined as a second coverage rate N. The first projected area A is equal to the second projected area B and 27%?(N?M)?58%.

Abstract: A color filter substrate and a display panel are provided. The color filter substrate includes a substrate, first spacers, second spacers, color resist patterns, and at least one dummy-color resist pattern. A first area has a first projection area A. A second area has a second projection area B. The color resist patterns are disposed at least partially around of at least one of the first spacers. A covering area of the color resist patterns in the first area is a. (a/A)*100% is defined as a first coverage rate M. The dummy-color resist pattern is disposed at least partially around of at least one of the second spacers. The covering area of the dummy-color resist pattern in the second area is b. (b/B)*100% is defined as a second coverage rate N. The first projected area A is equal to the second projected area B and 27% ?, (N-M)?58%.

Abstract: A diode device and manufacturing method thereof are provided. The diode device includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure and a termination structure. An active region and a termination region are defined in the epitaxial layer. The Schottky diode structure and the trench gate structure are located in the active region and the termination structure is located in the termination region. The termination structure includes a termination trench formed in the epitaxial layer, a termination insulating layer, a first spacer, a second spacer and a first doped region. The termination insulating layer is conformingly formed on inner walls of the termination trench. The first and second spacers are disposed on two sidewalls of the termination trench. The first doped region formed beneath the termination trench has a conductive type reverse to that of the epitaxial layer.

Abstract: A diode device and manufacturing method thereof are provided. The diode device includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure and a termination structure. An active region and a termination region are defined in the epitaxial layer. The Schottky diode structure and the trench gate structure are located in the active region and the termination structure is located in the termination region. The termination structure includes a termination trench formed in the epitaxial layer, a termination insulating layer, a first spacer, a second spacer and a first doped region. The termination insulating layer is conformingly formed on inner walls of the termination trench. The first and second spacers are disposed on two sidewalls of the termination trench. The first doped region formed beneath the termination trench has a conductive type reverse to that of the epitaxial layer.

Abstract: A method for making an electromagnetic wave shielding material comprises the steps of (a) mixing ternary Fe—Al—Si alloy powders and a solvent to prepare a Fe—Al—Si solution; (b) adding an acid in the Fe—Al—Si solution to release Fe ions through a dissolution reaction; (c) adding copper chloride powders in the Fe—Al—Si solution; (d) adding a lye in the Fe—Al—Si solution to induce a displacement reaction; (e) adding a silane coupling agent in the Fe—Al—Si solution; (f) placing the Fe—Al—Si solution in a microwave reactor to accelerate the displacement reaction; (g) producing a quaternary Cu—Fe—Al—Si alloy after the displacement reaction of the Fe—Al—Si solution, thereby forming a quaternary Cu—Fe—Al—Si alloy solution, which proceeding with a solid-liquid separation and a drying treatment to obtain an electromagnetic wave shielding material composed of quaternary Cu—Fe—Al—Si alloy in solid powders.

Abstract: The invention discloses a manufacturing method of a noble metal plating layer comprising the following steps: preparing a base material which is an alloy including a nickel base and at least one element with high oxidation valence on an object to be plated; soaking the object to be plated in a plating solution including pre-plating noble metal ions to make the element in the base material to be dissolved in the plating solution to obtain at least one ion with high oxidation valence; performing a chemical displacement reaction among the base material, the at least one ion having high oxidation valence, and the pre-plating noble metal ion in the plating solution to precipitate the pre-plating noble metal ion onto a surface of the object to be plated to form a noble metal plating layer.