Patents by Inventor Sung-Ying Wen

Sung-Ying Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE
    Publication number: 20220344283
    Abstract: A semiconductor structure serves to generate a physical unclonable function (PUF) code. The semiconductor structure includes a metal layer, N Titanium (Ti) structures, and N Titanium Nitride (Ti-N) structures, where N is a positive integer. The metal layer forms N metal structures. The Ti structures are respectively formed on one end of each metal structure. The Ti-N structures are respectively formed on top of the Ti structures. The metal structures and the corresponding Ti structures and the corresponding Ti-N structures respectively form a plurality of pillars. The pillars respectively provide a plurality of resistance values, and the resistance values serve to generate the PUF code.
    Type: Application
    Filed: January 27, 2022
    Publication date: October 27, 2022
    Applicant: Winbond Electronics Corp.
    Inventors: Chi-Ching Liu, Hsiu-Pin Chen, Sung-Ying Wen, Tso-Hua Hung, Yu-An Chen, Ming-Che Lin
  • Method for manufacturing electrode and resistive random access memory
    Patent number: 10636967
    Abstract: A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: April 28, 2020
    Assignee: Winbond Electronics Corp.
    Inventors: Yi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
  • METHOD FOR MANUFACTURING ELECTRODE AND RESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20190334087
    Abstract: A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
    Type: Application
    Filed: July 11, 2019
    Publication date: October 31, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
  • METHOD FOR MANUFACTURING ELECTRODE AND RESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20170256712
    Abstract: A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
    Type: Application
    Filed: September 13, 2016
    Publication date: September 7, 2017
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
  • Resistive RAM and method of manufacturing the same
    Patent number: 9224947
    Abstract: A resistive RAM and a method of manufacturing the same are provided. The resistive RAM includes a first electrode, a second electrode, a transition metal oxide (TMO) layer between the first and second electrodes, an activated metal layer between the first electrode and the TMO layer, and a metal oxynitride layer formed on a surface of the activated metal layer in the gas environment containing oxygen and nitrogen elements.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: December 29, 2015
    Assignee: Winbond Electronics Corp.
    Inventors: Shuo-Che Chang, Sung-Ying Wen