Abstract: A semiconductor circuit includes a first selection circuit which selects a first battery or a first capacitor, a second selection circuit which selects a second battery or a second capacitor, a voltage measuring circuit which measures a first voltage of the first battery or the first capacitor selected by the first selection circuit, and measures a second voltage of the second battery or the second capacitor selected by the second selection circuit, a controller which compares the first voltage and the second voltage to generate a comparison result, and a switching circuit which receives a signal based on a target output voltage, connects the first battery or capacitor selected by the first selection circuit, and the second battery capacitor selected by the second selection circuit in an interconnection relationship based on the comparison result to provide to an output terminal an output voltage responsive to the target output voltage.

Abstract: A laser apparatus includes: a first vacuum chamber, wherein machining is performed on a target substrate in the first vacuum chamber; a laser facing the first vacuum chamber; a carrier disposed in the first vacuum chamber, wherein the target substrate is seated on the carrier; a chamber window disposed in one surface of the first vacuum chamber, wherein a laser beam emitted by the laser passes through the chamber window; a first protection window positioned between the carrier and the chamber window; a second vacuum chamber disposed at a first side of the first vacuum chamber; and a transfer unit configured to transfer the first protection window to the second vacuum chamber.

Abstract: A laser apparatus includes: a first vacuum chamber, wherein machining is performed on a target substrate in the first vacuum chamber; a laser facing the first vacuum chamber; a carrier disposed in the first vacuum chamber, wherein the target substrate is seated on the carrier; a chamber window disposed in one surface of the first vacuum chamber, wherein a laser beam emitted by the laser passes through the chamber window; a first protection window positioned between the carrier and the chamber window; a second vacuum chamber disposed at a first side of the first vacuum chamber; and a transfer unit configured to transfer the first protection window to the second vacuum chamber.

Abstract: Provided are an electrostatic chuck, a deposition apparatus including the same, and a display panel fabricated using the same. According to an aspect, there is provided an electrostatic chuck including, a body, and a tension assist device disposed at a border of the body, the tension assist device includes a stepped portion disposed on a side of the body, and an end of the stepped portion is disposed higher than an upper surface of the body.

Abstract: Provided are a method and apparatus for performing authentication on a vehicle on-demand service. A method by which an integrated communication control unit performs authentication on a vehicle on-demand service, includes: storing, in a service authentication server, a first option value related to a vehicle service, received from a tool in factory (TIF) device; obtaining or generating a private root private key and a private root certificate; generating a device certificate and a device private key signed with the private root private key for each performance controller; generating a service token for the first option value by using the private root certificate and the private root private key; and transmitting the generated service token, the private root certificate, and the device private key for each performance controller.

Abstract: An apparatus for treating a substrate includes a housing having a treatment space therein, a heating plate that supports the substrate in the treatment space and that has a plurality of heating members inside, and a temperature control unit that controls the plurality of heating members to heat the substrate supported on the heating plate, in which the temperature control unit controls the plurality of heating members using a plurality of control signals with different control periods.

Abstract: Disclosure provides a substrate processing method, a thermal processing apparatus, and semiconductor manufacturing equipment that allow wafer thermal processing to be uniformly performed at a preset temperature. The substrate processing method includes determining an output of a heater provided in a heating plate by using a sensor substrate including a plurality of substrate temperature sensors, and performing thermal processing with respect to a substrate in response to the output of the heater. The determining of the output of the heater includes heating the sensor substrate through an initial output of the heater, measuring temperature distribution of the sensor substrate, determining the amount of change of target temperature distribution of the heating plate, and adjusting the output of the heater in response to the amount of change of the target distribution of the temperature heating plate.

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes measuring a temperature of a plurality of heaters installed on a heating plate for heating a substrate; and heating the substrate by adjusting an output of the heater based on a difference between a measured temperature of each heater and a target temperature of each heater which was previously modelled, and wherein a target temperature of a first heater among the heaters at a first time point is set differently from the target temperature of the first heater at a second time point which is later than the first time point.

Abstract: A laser apparatus includes: a first vacuum chamber, wherein machining is performed on a target substrate in the first vacuum chamber; a laser facing the first vacuum chamber; a carrier disposed in the first vacuum chamber, wherein the target substrate is seated on the carrier; a chamber window disposed in one surface of the first vacuum chamber, wherein a laser beam emitted by the laser passes through the chamber window; a first protection window positioned between the carrier and the chamber window; a second vacuum chamber disposed at a first side of the first vacuum chamber; and a transfer unit configured to transfer the first protection window to the second vacuum chamber.

Abstract: A laser apparatus includes: a first vacuum chamber, wherein machining is performed on a target substrate in the first vacuum chamber; a laser facing the first vacuum chamber; a carrier disposed in the first vacuum chamber, wherein the target substrate is seated on the carrier; a chamber window disposed in one surface of the first vacuum chamber, wherein a laser beam emitted by the laser passes through the chamber window; a first protection window positioned between the carrier and the chamber window; a second vacuum chamber disposed at a first side of the first vacuum chamber; and a transfer unit configured to transfer the first protection window to the second vacuum chamber.

Abstract: Embodiments of the disclosure relate to a ferritic alloy having excellent ability to withstand nuclear power plant accidents and a method of manufacturing a nuclear fuel cladding tube using the same. The alloy includes iron (Fe), aluminum (Al), chromium (Cr), and nickel (Ni). The nickel (Ni) may be included 0.5 to 10 wt % based on a total amount of the alloy. The chromium may be included 13 to 18 wt % based on the total amount of the alloy. The aluminum may be included 5 to 7 wt % based on the total amount of the alloy.

Abstract: Provided is a heating unit including: a heating plate for heating a substrate; a heater installed in the heating plate; and a control unit for controlling the heater, in which wherein the heater includes: a first heater; and a second heater installed at a position different from a position of the first heater, and the control unit includes: a power source for transferring power to at least one of the first heater and the second heater; and a switching module for connecting the first heater and the second heater in series or connecting the first heater and the second heater in parallel.

Abstract: The inventive concept relates to a heating member for heating a substrate. In an embodiment, the heating member includes a heater plate having at least one heating element bonded thereto, a connecting plate having a first space formed therein in which the heating element is accommodated, and a control plate having a control element bonded thereto, the control element being electrically connected with the heating element to control the heating element.

Abstract: The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

Abstract: Provided is a blockchain-based crowdfunding device and a crowdfunding service method using the platform, the blockchain-based crowdfunding device, comprising: a blockchain unit comprising: a membership certification part configured to treat admission and certification of the patentee and the investor as members, and function to form an electronic wallet; an electronic coin issuance part configured to issue an electronic coin which can be traded in an electronic money exchange bureau and can be used in a scope of all the business carried out in the patent value coin platform; and a patent value coin issuance part configured to issue a value coin that is intended for securing a right and value owned by the patentee and investor and can be used for the right and value only when crowdfunding is performed in the crowdfunding device; and a funding service unit comprising: a patent art provision part configured to quantify value of a patent art, thereby calculating an amount of money corresponding to the quantifying

Abstract: An apparatus for treating a substrate includes a housing having a treatment space therein, a plate that supports the substrate in the housing, a heating unit having a heating wire that is provided inside the plate and that heats the substrate, a main temperature sensor that directly measures temperatures of the plate, and an auxiliary temperature sensor that measures temperatures of the heating wire.

Abstract: A heat treatment method of a substrate includes setting a temperature profile over the course of stabilization to a target temperature after the substrate is loaded as a reference, and controlling a temperature of the hot plate supporting the substrate on the basis of the reference.

Abstract: An apparatus for treating a substrate is disclosed. The apparatus for treating the substrate includes a housing having a treatment space inside the housing, a plate to support the substrate inside the housing, a heating member provided inside the plate to heat the substrate and including a plurality of heating zones, a temperature measuring member to measure a temperature of the substrate with respect to each of the plurality of heating zones of the heating member, and a control unit to control a temperature for the heating member in a dynamic section of a temperature change graph measured in the temperature measuring member. The control unit performs temperature control with respect to each of the plurality of heating zones of the heating member to uniformize the thickness of the thin film on the substrate.

Abstract: A method of manufacturing a zirconium alloy for a nuclear fuel cladding tube includes melting a mixture of 0.5 wt % of Nb, 0.4 wt % of Mo, 0.1 to 0.15 wt % of Cu, 0.15 to 0.2 wt % of Fe, and a balance of zirconium to prepare a melted ingot; heat treating the melted ingot at 1,000 to 1,050° C. for 30 to 40 min. followed by quenching in water to prepare a heat-treated ingot; preheating the heat-treated ingot at 630 to 650° C. for 20 to 30 min. to prepare a preheated ingot followed by hot rolling the preheated ingot at a reduction ratio of 60 to 65% to provide a hot-rolled material; thrice performing vacuum annealing followed by cold-rolling; and vacuum annealing a third cold-rolled material in a final vacuum annealing at 510 to 520° C. for 7 to 9 hrs. to provide the zirconium alloy as a cold-rolled material.

Abstract: A semiconductor circuit includes a first selection circuit which selects a first battery or a first capacitor, a second selection circuit which selects a second battery or a second capacitor, a voltage measuring circuit which measures a first voltage of the first battery or the first capacitor selected by the first selection circuit, and measures a second voltage of the second battery or the second capacitor selected by the second selection circuit, a controller which compares the first voltage and the second voltage to generate a comparison result, and a switching circuit which receives a signal based on a target output voltage, connects the first battery or capacitor selected by the first selection circuit, and the second battery capacitor selected by the second selection circuit in an interconnection relationship based on the comparison result to provide to an output terminal an output voltage responsive to the target output voltage.