Abstract: For protecting data within a data storage system, such as a hard disk drive, security enable mode is entered. In that mode, initialization data is moved from a first area of a disk to a second area of the disk with a location of the second area being randomly generated. The initialization data is then erased from the first area. Also, a first cipher for firmware and a second cipher for a disk are both changed into a randomly generated value. Later, access to the initialization data from the second area is granted in the security enable mode if the first and second ciphers are the same.

Abstract: For protecting data during transmission between a host device and a data storage device, the host device encrypts command-related information and sends the encrypted command-related information to the data storage device. The data storage device decrypts the encrypted command-related information, interprets the decrypted command-related information to generate interpreted commands, and executes the interpreted commands.

Abstract: For generating a random number in a disk drive, a seed is generated from a respective sector number for each of at least one sector of the disk drive. The random number is calculated using the seed. The seed that is generated with enhanced unpredictability and complexity is used to generate the random number for secure data cryptography within the disk drive.

Abstract: A method of and apparatus for processing data according to data types. The data processing method is performed by a slave processor and a main processor, wherein the slave processor stores and reads data and the main processor is connected to the slave processor to process the data.

Abstract: An air conditioning system using enthalpy of the outside air controls automatically the opening rates of the outside air inflow damper and the inside air discharge damper to control automatically an amount of air flowing from the outside of a building to the inside and an amount of the air discharging from the inside to the outside depending on the difference between enthalpy of the outside air and enthalpy of an discharge air, and an amount of CO2 detected the inside of the building. All of the control status is identified and grasped at sight by controlling all of the driving devices and setting them in a central main control system.

Abstract: A method for fabricating a high voltage transistor includes the steps of: forming a plurality of drift regions on a semiconductor substrate of a first conductive type; implanting drift ions of a second conductive type into surfaces of the drift regions of the semiconductor substrate at a first depth; implanting drift ions of the second conductive type into the surfaces of the drift regions of the semiconductor substrate at a second depth deeper than the first depth; implanting first conductive channel stop ions into the semiconductor substrate thereby forming a space between the semiconductor substrate and the drift regions; forming a device isolation film on a surface of the semiconductor substrate into which the channel stop ions are implanted; forming a gate electrode by inserting a gate insulating film on the semiconductor substrate between the drift regions; and forming a source/drain impurity diffusion region of a second conductive type in the surface of the semiconductor substrate at both sides of the

Abstract: A method for fabricating a high voltage transistor includes the steps of: forming a plurality of drift regions on a semiconductor substrate of a first conductive type; implanting drift ions of a second conductive type into surfaces of the drift regions of the semiconductor substrate at a first depth; implanting drift ions of the second conductive type into the surfaces of the drift regions of the semiconductor substrate at a second depth deeper than the first depth; implanting first conductive channel stop ions into the semiconductor substrate thereby forming a space between the semiconductor substrate and the drift regions; forming a device isolation film on a surface of the semiconductor substrate into which the channel stop ions are implanted; forming a gate electrode by inserting a gate insulating film on the semiconductor substrate between the drift regions; and forming a source/drain impurity diffusion region of a second conductive type in the surface of the semiconductor substrate at both sides of the

Abstract: A method for fabricating a flash memory cell includes forming first gate insulating films and polysilicon layers in succession on a substrate, wherein the first gate insulating films and the polysilicon layers extend in a first direction, and forming buried regions in the substrate under portions of the polysilicon layers. The method includes forming second insulating films, control gates, and cap insulating films in succession on the substrate and the polysilicon layers, and forming first sidewall spacers at both sides of the control gates. The method further includes forming floating gates by patterning the polysilicon layers using the first sidewall spacers as masks, forming field insulating films between the floating gates, and forming erasure gates on the field insulating films between the floating gates.