Abstract: The present invention relates to a composite heat exchanger for an electric vehicle. The objective of the present invention is to provide an integrated composite heat exchanger that allows a plurality of heat exchange media to be distributed in each area, and to provide a composite heat exchanger for an electric vehicle that obtains effects, by means of integration, such as reducing the number of components and the number of processes, improving refrigerant flow characteristics, and improving cooling efficiency, and in addition, the problem of concentration of thermal stress caused by the integration of the heat exchanger is resolved by means of improving the shape of the area boundary.

Abstract: A rear seat apparatus for a vehicle includes a back frame and a cushion frame. The back frame is not interlocked with the cushion frame and is individually rotated in the forward-and-rearward direction independently of the cushion frame. The cushion frame is not interlocked with the back frame and individually slides in the forward-and-rearward direction independently of the back frame. A front seating state and a rear seating state of a passenger are implemented through individual sliding movement of the cushion frame in the forward-and-rearward direction.

Abstract: A display device is provided. The display device includes a display panel, a cover window on the display panel, and an optical film on the cover window, wherein the optical film includes a base layer, a hard coating layer on the base layer, a low refraction layer on the hard coating layer, and an anti-fingerprint layer on the low refraction layer, and the optical film has a hardness of 35 Hv or more and has a crack strain of 2% or more.

Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Abstract: A multilayer electronic component includes a body including a dielectric layer and a first internal electrode and a second internal electrode having first to sixth surfaces, a first external electrode including a first connection portion on the third surface, a first band portion on a portion of the first surface, and a third band portion on a portion of the second surface, a second external electrode including a second connection portion on the fourth surface, a second band portion on a portion of the first surface, and a fourth band portion on a portion of the second surface, an insulating layer disposed on the first and second connection portions and covering the second surface and the third and fourth band portions, a first plating layer disposed on the first band portion, and a second plating layer disposed on the second band portion. The insulating layer includes an oxide containing Ba.

Abstract: A semiconductor device includes: a lower interlayer insulating layer; first and second active patterns on the lower interlayer insulating layer; a gate electrode on the first and second active patterns; a first source region on a first side of the gate electrode; a second source region on a second side of the gate electrode; a third source region on the first side of the gate electrode; a drain region on the second side of the gate electrode; a first contact adjacent to the gate electrode, and connected to the first and third source regions; a second contact adjacent to the gate electrode, and connected to the second source region; a third contact adjacent to the gate electrode, and connected to the drain region; a lower wiring layer inside the lower interlayer insulating layer; and a through via connecting the lower wiring layer with the first contact.

Abstract: Provided is a wastewater purification method, the method including: supplying a first mixed stream, in which an acid component and wastewater including water, a nitrile-based monomer, and ammonia are mixed, to a first column; recovering the nitrile-based monomer from an upper discharge stream from the first column; supplying a second mixed stream, in which a lower discharge stream from the first column and a base component are mixed, to a second column; and recovering the ammonia from an upper discharge stream from the second column and separating purified wastewater.

Abstract: The present invention relates generally to a lead frame which is bended with a predetermined angle many times in order that a sectional area of a punch to form two lead lines which are located in the center of tie bars is increased, and increase the inertial moment as to a sectional area in making a lead frame of a desired shape. And the above-mentioned lead frame comprises a dambar; inner leads which has a certain angle at the part being below half the distance from lead tips to the above-mentioned dambar, and is connected to the above-mentioned dambar; outer leads which is connected to the above-mentioned dambar, and is populated on a circuit board; and tie bars which support the above-mentioned inner leads in case of taping.