Abstract: A package structure includes a carrier substrate, a die, and an encapsulant. The carrier substrate includes through carrier vias (TCV). The die is disposed over the carrier substrate. The die includes a semiconductor substrate and conductive posts disposed over the semiconductor substrate. The conductive posts face away from the carrier substrate. The encapsulant laterally encapsulates the die.

Abstract: A method for handling a semiconductor substrate includes: placing a semiconductor substrate over a semiconductor apparatus, where a central portion of the semiconductor substrate overlies a carrying surface of a chuck table of the semiconductor apparatus, an edge portion of the semiconductor substrate overlies a top surface of a first flexible member of the semiconductor apparatus, the first flexible member is disposed within a recess of the chuck table and extends along a perimeter of the carrying surface, and a gap forms among the semiconductor substrate, the carrying surface of the chuck table, and the top surface of the first flexible member; and introducing a vacuum in vacuum holes in the chuck table to form a vacuum seal among the semiconductor substrate, the chuck table, and the first flexible member.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

Abstract: An integrated circuit package including integrated circuit dies and a method of forming are provided. The integrated circuit package may include a first integrated circuit die and a second integrated circuit die bonded to the first integrated circuit die. The first integrated circuit die may include a first substrate, a first interconnect structure, and a first bonding layer. The first interconnect structure may be between the first bonding layer and the first substrate. The second integrated circuit die may include a second substrate, a second interconnect structure, and a second bonding layer. The second interconnect structure may be between the second bonding layer and the second substrate. A first surface of the first bonding layer may be in direct contact with a first surface of the second bonding layer. A sidewall the first bonding layer and the first surface of the second bonding layer may form a first acute angle.

Abstract: A semiconductor package includes a first package component comprising: an integrated circuit die; an encapsulant surrounding the integrated circuit die; and a fan-out structure electrically connected to the integrated circuit die, wherein a first opening extends completely through the fan-out structure and at least partially through the encapsulant in a cross-sectional view, and wherein the encapsulant at least completely surrounds the first opening in a top-down view. The semiconductor package further includes a package substrate bonded to the first package component.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

Abstract: A package structure includes a carrier substrate, a die, and an encapsulant. The carrier substrate includes through carrier vias (TCV). The die is disposed over the carrier substrate. The die includes a semiconductor substrate and conductive posts disposed over the semiconductor substrate. The conductive posts face away from the carrier substrate. The encapsulant laterally encapsulates the die.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

Abstract: A package structure includes a carrier substrate, a die, and a first redistribution structure. The carrier substrate has a first surface and a second surface opposite to the first surface. The carrier substrate includes an insulating body and through carrier vias (TCV) embedded in the insulating body. The die is disposed over the firs surface of the carrier substrate. The die is electrically connected to the TCVs. The first redistribution structure is disposed on the second surface of the carrier substrate.

Abstract: A package structure includes a semiconductor device including a conductive feature, a joint layer, a pillar structure, an encapsulant and a RDL structure. The joint layer is disposed on the conductive feature. The pillar structure is disposed on and coupled to the semiconductor device through the joint layer. The encapsulant laterally encapsulates the semiconductor device and the pillar structure. The RDL structure is electrically connected to the semiconductor device.

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material, and a redistribution structure. The semiconductor device includes a chamfer disposed on one of a plurality of side surfaces of the semiconductor device. The encapsulating material encapsulates the semiconductor device. The redistribution structure is disposed over the encapsulating material and electrically connected to the semiconductor device.

Abstract: An apparatus and a method for handling a semiconductor substrate are provided. The apparatus includes a chuck table and a first flexible member. The chuck table includes a carrying surface, a first recess provided within the carrying surface, and a vacuum channel disposed below the carrying surface, and the chuck table is configured to hold the semiconductor substrate. The first flexible member is disposed within the first recess and includes a top surface protruded from the first recess, and the first flexible member is compressed as the semiconductor substrate presses against the first flexible member.

Abstract: A package structure includes a carrier substrate, a die, and a first redistribution structure. The carrier substrate has a first surface and a second surface opposite to the first surface. The carrier substrate includes an insulating body and through carrier vias (TCV) embedded in the insulating body. The die is disposed over the firs surface of the carrier substrate. The die is electrically connected to the TCVs. The first redistribution structure is disposed on the second surface of the carrier substrate.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first semiconductor die, at least one first conductive connector disposed beside the first semiconductor die and electrically coupled to the first semiconductor die, an insulating encapsulation laterally encapsulating the first semiconductor die and the at least one first conductive connector, and a redistribution structure disposed on the insulating encapsulation and being in contact with the first semiconductor die and the at least one first conductive connector. A thickness of the at least one first conductive connector is less than a thickness of the insulating encapsulation.

Abstract: A wireless passive strain sensor is provided. The wireless passive strain sensor includes an outer coil holder, a reading inductance coil, a capacitance patch, an inner coil holder, and a sensing inductance coil. A shaft penetrates through the outer coil holder. The reading inductance coil is disposed on the outer coil holder. The capacitance patch is disposed on the shaft. The inner coil holder is disposed inside the outer coil holder. The inner coil holder is disposed on the shaft. The sensing inductance coil is disposed on the inner coil holder. The sensing inductance coil is electrically connected to the capacitance patch.

Abstract: A smart mechanical component has a mechanical part main body; a mechanical part secondary body located inside of the mechanical part main body; a three dimensional three-dimensional (3-D) reserved space located between the mechanical part main body and the mechanical part secondary body; at least one connecting unit connecting the mechanical part main body and the mechanical part secondary body; wherein the mechanical part main body, the mechanical part secondary body and the three dimensional three-dimensional (3-D) reserved space form a capacitor; the connecting unit forms an inductor; the inductor and the capacitor forms an inductor-capacitor circuit.

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material, and a redistribution structure. The semiconductor device includes a chamfer disposed on one of a plurality of side surfaces of the semiconductor device. The encapsulating material encapsulates the semiconductor device. The redistribution structure is disposed over the encapsulating material and electrically connected to the semiconductor device.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first semiconductor die, at least one first conductive connector disposed beside the first semiconductor die and electrically coupled to the first semiconductor die, an insulating encapsulation laterally encapsulating the first semiconductor die and the at least one first conductive connector, and a redistribution structure disposed on the insulating encapsulation and being in contact with the first semiconductor die and the at least one first conductive connector. A thickness of the at least one first conductive connector is less than a thickness of the insulating encapsulation.