Patents by Inventor Sung-Yung Jeon

Sung-Yung Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7115470
    Abstract: There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.
    Type: Grant
    Filed: May 7, 2004
    Date of Patent: October 3, 2006
    Assignee: Samsung Electronics, Ltd., Co.
    Inventors: Jae-Hyun Park, Jae-Min Yu, Chul-Soon Kwon, In-gu Yoon, Eung-yung Ahn, Jung-ho Moon, Yong-Sun Lee, Sung-Yung Jeon
  • Publication number: 20050063208
    Abstract: There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.
    Type: Application
    Filed: May 7, 2004
    Publication date: March 24, 2005
    Inventors: Jae-Hyun Park, Jae-Min Yu, Chul-Soon Kwon, In-gu Yoon, Eung-yung Ahn, Jung-ho Moon, Yong-Sun Lee, Sung-Yung Jeon