Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

Abstract: A lithography apparatus is provided. The lithography apparatus includes: a polarizing filter that converts incident light to first polarized light having a single polarizing direction; and a photo mask that is disposed to be separated from the polarizing filter and in which a polarizing pattern having a polarization axis of a predetermined direction in order to convert the applied first polarized light to second polarized light by adjusting a transmittance of the first polarized light and a light blocking pattern that blocks the first polarized light are formed, wherein by radiating light in which a transmittance is adjusted in the photo mask, the photoresist is patterned.

Abstract: The present invention relates to an ultrashort pulse laser processing device. The ultrashort pulse laser includes a stage a transfer member, a front confocal microscope, a front laser generating unit, and a front highpowered lens. A sample is provided on the stage to be processed, the transfer member transfers the stage, and the front confocal microscope is provided above the stage. The front laser generating unit is provided between the front confocal microscope and the stage to generate an ultrashort pulse laser, and the front high-powered lens focuses the laser provided from the front laser generating unit.

Abstract: The present invention relates to an ultrashort pulse laser processing device. The ultrashort pulse laser includes a stage a transfer member, a front confocal microscope, a front laser generating unit, and a front highpowered lens. A sample is provided on the stage to be processed, the transfer member transfers the stage, and the front confocal microscope is provided above the stage. The front laser generating unit is provided between the front confocal microscope and the stage to generate an ultrashort pulse laser, and the front high-powered lens focuses the laser provided from the front laser generating unit.