Abstract: A semiconductor device includes a source structure including a plate layer and first and second horizontal conductive layers stacked in order on the plate layer, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the source structure, a channel structure penetrating through the gate electrodes, extending in the first direction, and including a channel layer in contact with the first horizontal conductive layer, and a separation region penetrating through the gate electrodes and extending in the first direction and in a second direction perpendicular to the first direction, wherein the first horizontal conductive layer extends horizontally below the separation region and has a seam overlapping the separation region in the first direction.

Abstract: A method of matching a voice for each object included in a video, includes: separating a plurality of voices in a video; determining a dissimilarity between the plurality of voices; selecting a partial duration in an entire duration of the video as a matching duration, based on the dissimilarity between the plurality of voices; matching, within the matching duration, the plurality of voices with a plurality of objects in the video respectively, based on mouth movements of the plurality of objects; and matching the plurality of voices with the plurality of objects respectively in the entire duration of the video, based on results of the matching between the plurality of voices and the plurality of objects within the matching duration.

Abstract: A semiconductor device includes a pattern structure; a stack structure including gate layers stacked in a first region on the pattern structure and extending into a second region; a memory vertical structure penetrating the stack structure in the first region; gate contact plugs electrically connected to the gate layers in the second region; and a first peripheral contact plug spaced apart from the gate layers, the gate layers including a first gate layer, the gate contact plugs including a first gate contact plug electrically connected to the first gate layer, side surfaces of the first gate contact plug and the first peripheral contact plug having different numbers of upper bending portions, and the number of upper bending portions of the side surface of the first gate contact plug being greater than the number of upper bending portions of the side surface of the first peripheral contact plug.

Abstract: A semiconductor device includes a pattern structure; a stack structure including gate layers stacked in a first region on the pattern structure and extending into a second region; a memory vertical structure penetrating the stack structure in the first region; gate contact plugs electrically connected to the gate layers in the second region; and a first peripheral contact plug spaced apart from the gate layers, the gate layers including a first gate layer, the gate contact plugs including a first gate contact plug electrically connected to the first gate layer, side surfaces of the first gate contact plug and the first peripheral contact plug having different numbers of upper bending portions, and the number of upper bending portions of the side surface of the first gate contact plug being greater than the number of upper bending portions of the side surface of the first peripheral contact plug.

Abstract: A semiconductor device includes a pattern structure; a stack structure including gate layers stacked in a first region on the pattern structure and extending into a second region; a memory vertical structure penetrating the stack structure in the first region; gate contact plugs electrically connected to the gate layers in the second region; and a first peripheral contact plug spaced apart from the gate layers, the gate layers including a first gate layer, the gate contact plugs including a first gate contact plug electrically connected to the first gate layer, side surfaces of the first gate contact plug and the first peripheral contact plug having different numbers of upper bending portions, and the number of upper bending portions of the side surface of the first gate contact plug being greater than the number of upper bending portions of the side surface of the first peripheral contact plug.