Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: A method of forming a gate structure includes forming a tunnel insulation layer pattern on a substrate, forming a floating gate on the tunnel insulation layer pattern, forming a dielectric layer pattern on the floating gate, the dielectric layer pattern including a first oxide layer pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern, the second oxide layer pattern being formed by performing an anisotropic plasma oxidation process on the nitride layer, such that a first portion of the second oxide layer pattern on a top surface of the floating gate has a larger thickness than a second portion of the second oxide layer pattern on a sidewall of the floating gate, and forming a control gate on the second oxide layer.

Abstract: A method of forming a gate structure includes forming a tunnel insulation layer pattern on a substrate, forming a floating gate on the tunnel insulation layer pattern, forming a dielectric layer pattern on the floating gate, the dielectric layer pattern including a first oxide layer pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern, the second oxide layer pattern being formed by performing an anisotropic plasma oxidation process on the nitride layer, such that a first portion of the second oxide layer pattern on a top surface of the floating gate has a larger thickness than a second portion of the second oxide layer pattern on a sidewall of the floating gate, and forming a control gate on the second oxide layer.

Abstract: Disclosed herein is a condenser connector for a vehicle, in which a condenser is installed at a position which is nearest or virtually nearest to a noise source, thus effectively eliminating or reducing noise. The condenser connector includes a housing having an insertion part. One end of a terminal is connected to a wire, and the other end thereof is fitted into and secured to one end of the insertion part. A holder is fitted into and secured to the other end of the insertion part. A condenser has a contact terminal which is in contact with the terminal, and is mounted to the holder.

Abstract: The present invention provides a connector for use in a vehicle, the connector including a male connector, a female connector and a connector cover mounted on the circumferential surface of the female connector thereby providing secure connection and removing/reducing noise of the vehicle. More specifically, the female connector includes a housing, a projection formed to project on top of the housing, an operating lever horizontally disposed over the housing in the forward and backward direction to perform a seesaw motion, and a locking projection formed at the front bottom of the operating lever. On the other hand, the male connector is configured to be inserted into the female connector and connected to the female connector by the locking projection. Furthermore, the female connector is double locked and the connector cover is molded with ferrite powder to remove or reduce noise of the vehicle.

Abstract: The present invention provides a connector for use in a vehicle, the connector including a male connector, a female connector and a connector cover mounted on the circumferential surface of the female connector thereby providing secure connection and removing/reducing noise of the vehicle. More specifically, the female connector includes a housing, a projection formed to project on top of the housing, an operating lever horizontally disposed over the housing in the forward and backward direction to perform a seesaw motion, and a locking projection formed at the front bottom of the operating lever. On the other hand, the male connector is configured to be inserted into the female connector and connected to the female connector by the locking projection. Furthermore, the female connector is double locked and the connector cover is molded with ferrite powder to remove or reduce noise of the vehicle.

Abstract: Disclosed herein is a condenser connector for a vehicle, in which a condenser is installed at a position which is nearest or virtually nearest to a noise source, thus effectively eliminating or reducing noise. The condenser connector includes a housing having an insertion part. One end of a terminal is connected to a wire, and the other end thereof is fitted into and secured to one end of the insertion part. A holder is fitted into and secured to the other end of the insertion part. A condenser has a contact terminal which is in contact with the terminal, and is mounted to the holder.