Abstract: A display device includes a first electrode disposed on a substrate and extending in a first direction, a via insulating layer disposed on the first electrode and including an opening exposing at least a portion of the first electrode, and a second electrode disposed on the first electrode and the via insulating layer and overlapping the first electrode in the opening.

Abstract: A storage device and a storage system including the same are provided. The storage device includes a reference clock pin configured to receive a reference clock signal from a host, a reference clock frequency determination circuitry configured to determine a reference clock frequency from the reference clock signal received through the reference clock pin, and a device controller circuitry configured to perform a high speed mode link startup between the host and the storage device according to the reference clock frequency.

Abstract: Disclosed herein is a quantitative analysis method for measuring a target element in a specimen using laser-induced plasma spectrum. More particularly, the present invention relates to a method for analyzing a composition ratio of a target element by calculating peak intensities when peaks overlap each other in a spectrum, and a method for selecting a peak of a wavelength at which the highest precision and reproducibility are secured through linearity of a correlation plot of the peak intensities and a value by dividing a standard deviation value of calibration curve data (peak intensity ratios) by a slope when an internal standard method is used for quantitative analysis of a target element.

Abstract: Disclosed herein is a quantitative analyzing method of a copper indium gallium selenide (CIGS) film, the method including: obtaining spectra by irradiating a laser on the plurality of CIGS films having different component compositions, selecting a first spectral line and a second spectral line among the spectra of target elements to be analyzed and obtaining a correlation plot between a measured intensity of the first spectral line and a measured intensity of the second spectral line, correcting the measured intensity of the first spectral line and the measured intensity of the second spectral line using results obtained by curve fitting the correlation plot, obtaining a linear calibration curve using the corrected intensity of the first spectral line and the corrected intensity of the second spectral line; and comparing the linear calibration curve with LIBS analysis of a target sample to be analyzed.

Abstract: The present invention relates to a process control system which can measure the physical properties of a CIGS thin film in real-time in a continuous production line of a CIGS thin film solar cell, more specifically to a system for real-time analysis of material distribution of a CIGS thin film comprising: a header, which comprises a laser irradiation unit producing plasma from the CIGS thin film by irradiating a laser beam to a part of the CIGS thin film; and a spectrum detection optical unit detecting a spectrum generated from the plasma; a transfer unit, which transfers the header at the same rate and to the direction with the transfer rate and direction of the CIGS thin film; and a spectrum analysis unit, which analyzes the spectrum detected by the spectrum detection optical unit.

Abstract: Disclosed herein is a quantitative analyzing method of a copper indium gallium selenide (CIGS) film, the method including: obtaining spectra by irradiating a laser on the plurality of CIGS films having different component compositions, selecting a first spectral line and a second spectral line among the spectra of target elements to be analyzed and obtaining a correlation plot between a measured intensity of the first spectral line and a measured intensity of the second spectral line, correcting the measured intensity of the first spectral line and the measured intensity of the second spectral line using results obtained by curve fitting the correlation plot, obtaining a linear calibration curve using the corrected intensity of the first spectral line and the corrected intensity of the second spectral line; and comparing the linear calibration curve with LIBS analysis of a target sample to be analyzed.

Abstract: Disclosed herein is a component quantitative analyzing method depending on a depth of a CIGS film, the method including: generating plasma by irradiating a laser beam on the CIGS film and obtaining spectra generated from the plasma, selecting spectral lines having similar characteristics among spectra of specific elements of the CIGS film, and measuring component composition using a value obtained by summing intensities of the selected spectral lines.

Abstract: Disclosed herein is a quantitative analysis method for measuring a target element in a specimen using laser-induced plasma spectrum. More particularly, the present invention relates to a method for analyzing a composition ratio of a target element by calculating peak intensities when peaks overlap each other in a spectrum, and a method for selecting a peak of a wavelength at which the highest precision and reproducibility are secured through linearity of a correlation plot of the peak intensities and a value by dividing a standard deviation value of calibration curve data (peak intensity ratios) by a slope when an internal standard method is used for quantitative analysis of a target element.

Abstract: A fabrication processing system is used to produce copper indium gallium selenide (CuIn1-xGaxSe2 or CIGS) thin film solar cells, more particularly to a fabrication processing system CIGS of thin film solar cells, equipped with real-time analysis facilities for profiling the elemental components of CIGS thin film using laser-induced breakdown spectroscopy. The system provides a process control system for determining whether abnormalities are present or not by measuring a physical and chemical properties on a continuous production process lines of CIGS thin film solar cell in real time, and performs a production and quality management at the same time by providing a feedback to CIGS fabrication process.

Abstract: A scribing apparatus having a function to analyze distribution of a material forming a semiconductor or solar cell in real-time in a process producing the semiconductor or solar cell of is disclosed. The scribing apparatus having the analysis function of material distribution comprises: a laser irradiation unit, which conducts scribing by irradiating laser to a position to be scribed of an analysis subject; a spectrum detection optical unit, which detects a spectrum generated from plasma, which is produced by the irradiated laser; a spectrum information storage, which stores spectrum state information of each material forming the analysis subject; and a spectrum analysis unit, which analyzes distribution state information of the material by comparing the spectrum state information and the detected spectrum.

Abstract: The present invention relatives to a fabrication processing system of CIGS thin film solar cell, more particularly to a fabrication processing system CIGS of thin film solar cell equipped with real-time analysis facilities for profiling the elemental components of CIGS thin film using laser-induced breakdown spectroscopy. The system of the present invention is to provide a process control system for determining whether abnormalities are present or not by measuring a physical and chemical properties on a continuous production process lines of CIGS thin film solar cell in real time, and performing a production and quality management at the same time by providing a feedback to CIGS fabrication process.

Abstract: The present invention relates to a process control system which can measure the physical properties of a CIGS thin film in real-time in a continuous production line of a CIGS thin film solar cell, more specifically to a system for real-time analysis of material distribution of a CIGS thin film comprising: a header, which comprises a laser irradiation unit producing plasma from the CIGS thin film by irradiating a laser beam to a part of the CIGS thin film; and a spectrum detection optical unit detecting a spectrum generated from the plasma; a transfer unit, which transfers the header at the same rate and to the direction with the transfer rate and direction of the CIGS thin film; and a spectrum analysis unit, which analyzes the spectrum detected by the spectrum detection optical unit.

Abstract: An invasive laser acupuncture includes a first semiconductor laser connected to a first optical fiber acupuncture and providing red-based laser beam with the first optical fiber acupuncture; a second semiconductor laser connected to a second optical fiber acupuncture and providing a green-based laser beam with the second optical fiber acupuncture; and a driving circuit independently driving the first semiconductor laser and the second semiconductor laser in a continuous mode or a pulse mode by a switching operation. Since red and green lasers can independently be driven in the continuous mode and the pulse mode, the red and green laser can easily be adopted in a reinforcing and reducing treatment method in traditional oriental medicine. In addition, by using a metal-coated optical fiber acupuncture, the optical fiber acupuncture is injected directly into meridian pathways provided under an epidermal layer, such that it is possible to efficiently transmit a laser beam without loss.