Abstract: A turn signal lamp for an outside mirror is disclosed. The turn signal lamp comprises a lens and a light source module coupled to one side of the lens. The light source module includes a printed circuit board (PCB), a PCB assembly including a light emitting diode (LED) disposed on the PCB to output light, and a light source module case configured to accommodate the PCB assembly in an internal space. The light source module case includes a recess formed horizontally along a circumference of a surface of the light source module case. The lens includes a lens protrusion in which a part of the lens protrudes in a shape corresponding to the recess. The lens protrusion is inserted into the recess to come into close contact with a front surface of the recess, so that the light source module and the lens are coupled to each other.

Abstract: A turn signal lamp for an outside mirror is disclosed. The turn signal lamp comprises a lens and a light source module coupled to one side of the lens. The light source module includes a printed circuit board (PCB), a PCB assembly including a light emitting diode (LED) disposed on the PCB to output light, and a light source module case configured to accommodate the PCB assembly in an internal space. The light source module case includes a recess formed horizontally along a circumference of a surface of the light source module case. The lens includes a lens protrusion in which a part of the lens protrudes in a shape corresponding to the recess. The lens protrusion is inserted into the recess to come into close contact with a front surface of the recess, so that the light source module and the lens are coupled to each other.

Abstract: An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W2, which is a distance from the first surface to a second point, to a first shortest distance W1, which is a distance from the first surface to a first point, (W2:W1) ranging from 1:1.25 to 1:100.

Abstract: A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.

Abstract: A light-emitting diode according to the present invention comprises: a light-emitting structure which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; passivation layer which protects the light-emitting structure; and a metal layer formed, between the light-emitting structure and the passivation layer, on the light-emitting structure, wherein a distance between the passivation layer and the metal layer is 4 to 12 times greater than the thickness of the passivation layer.

Abstract: A light emitting device includes a sapphire substrate; a light emitting structure disposed on the sapphire substrate, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first bonding pad electrically connected to the first electrode; a second bonding pad electrically connected to the second electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed between the second electrode and the second bonding pad.

Abstract: A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.

Abstract: A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be ? or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

Abstract: An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W2, which is a distance from the first surface to a second point, to a first shortest distance W1, which is a distance from the first surface to a first point, (W2:W1) ranging from 1:1.25 to 1:100.

Abstract: A light emitting device includes a sapphire substrate; a light emitting structure disposed on the sapphire substrate, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first bonding pad electrically connected to the first electrode; a second bonding pad electrically connected to the second electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed between the second electrode and the second bonding pad.

Abstract: A light emitting device of an embodiment includes a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes respectively connected to the first and second conductive semiconductor layers, a metal reflecting layer disposed under the light emitting structure, and a first insulating layers disposed between the first electrode and the light emitting structure, between the first electrode and the second electrode, and between the first electrode and the metal reflecting layer, wherein the metal reflecting layer includes a first segment overlapped with the second electrode in a thickness direction of the light emitting structure and a second segment disposed with extending from the first segment.

Abstract: Disclosed herein are a manufacturing method of a carbon-silicon composite, the manufacturing method including: (a) preparing a silicon-carbon-polymer matrix slurry including a silicon slurry, carbon particles, a monomer of polymer, and a cross-linking agent; (b) performing a heat treatment process on the silicon-carbon-polymer matrix slurry to manufacture a silicon-carbon-polymer carbonized matrix; (c) pulverizing the silicon-carbon-polymer carbonized matrix to manufacture a silicon-carbon-polymer carbonized matrix structure; and (d) mixing the silicon-carbon-polymer carbonized matrix structure with a first carbon raw material and performing a carbonization process to manufacture a carbon-silicon composite, the carbon-silicon composite, an anode for a secondary battery manufactured by applying the carbon-silicon composite, and a secondary battery including the anode for a secondary battery.

Abstract: Disclosed are a light emitting device package and a lighting apparatus. The light emitting device package includes a substrate, a light emitting structure disposed under the substrate and including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer exposed through at least one contact hole, a second electrode connected to the second conductive type semiconductor layer, a first insulating layer configured to extend from under the light emitting structure to a space between a side of the light emitting structure and the first electrode and configured to reflect light, and a reflective layer disposed under the first insulating layer.

Abstract: A light-emitting diode according to the present invention comprises: a light-emitting structure which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; passivation layer which protects the light-emitting structure; and a metal layer formed, between the light-emitting structure and the passivation layer, on the light-emitting structure, wherein a distance between the passivation layer and the metal layer is 4 to 12 times greater than the thickness of the passivation layer.

Abstract: Disclosed herein are a manufacturing method of a carbon-silicon composite, including: (a) preparing a slurry solution including silicon (Si)-block copolymer core-shell particles; (b) mixing the slurry solution with a carbon raw material to manufacture a mixed solution; (c) performing a primary carbonization process on the mixed solution, followed by pulverization, to manufacture a primary carbon-silicon composite; and (d) performing a secondary carbonization process on the primary carbon-silicon composite, followed by pulverization, to manufacture a secondary carbon-silicon composite, the carbon-silicon composite, an anode for a secondary battery manufactured by applying the carbon-silicon composite, and a secondary battery including the anode for a secondary battery.

Abstract: A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be ? or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

Abstract: A light emitting device of an embodiment includes a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes respectively connected to the first and second conductive semiconductor layers, a metal reflecting layer disposed under the light emitting structure, and a first insulating layers disposed between the first electrode and the light emitting structure, between the first electrode and the second electrode, and between the first electrode and the metal reflecting layer, wherein the metal reflecting layer includes a first segment overlapped with the second electrode in a thickness direction of the light emitting structure and a second segment disposed with extending from the first segment.

Abstract: Provided is a method of manufacturing a transparent circuit substrate for a touch screen. The method may involve forming an electrode layer on a transparent substrate, stacking a light shielding layer on the transparent substrate such that the light shielding layer is located on an outside of the electrode layer, stacking a mask on the light shielding layer and the electrode layer, forming a conductive layer on the mask, forming connecting lines for connecting the electrode layer and connecting terminals by removing the mask and a portion of the conductive layer, and forming the connecting terminals on the light shielding layer such that the connecting terminals contact the connecting lines.

Abstract: A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.

Abstract: Silicon slurry for anode active materials of secondary batteries is provided. The silicon slurry includes silicon particles and a dispersion medium. The silicon slurry satisfies dispersion conditions of 1?D90/D50?2.5 and 2 nm<D50<180 nm, where D90 denotes an average diameter of the silicon particles at 90% of cumulative particle size distribution, and D50 denotes an average diameter of the silicon particles at 50% of cumulative particle size distribution.