Patents by Inventor Sung Ho Oh

Sung Ho Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11972136
    Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
    Type: Grant
    Filed: October 12, 2022
    Date of Patent: April 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
  • Publication number: 20240136531
    Abstract: A conductive composite material, a method of preparing the same, and a secondary battery including the same. The conductive composite material may increase the proportion of an active material when forming an electrode by chemically bonding a conductive material and a binder to each other. A method of preparing the conductive composite material comprises ionizing carbon-based particles in a predetermined polarity, ionizing PTFE particles in a polarity different from that of the carbon-based particles, and chemically bonding the ionized carbon-based particles and the ionized PTFE particles, which are ionized in different polarities, to each other.
    Type: Application
    Filed: September 20, 2023
    Publication date: April 25, 2024
    Inventors: Seung Min Oh, Sung Ho Ban, Sang Hun Lee, Ko Eun Kim, Yoon Sung Lee, Chang Hoon Song, Hyeong Jun Choi, Jun Myoung Sheem, Jin Kyo Koo, Young Jun Kim
  • Patent number: 11961552
    Abstract: A memory device includes a plurality of bit lines extending in a first direction and arranged in a second direction; and a cell region including a plane which is coupled to the plurality of bit lines, wherein the plane is divided into a plurality of memory groups each including a plurality of partial pages to be disposed in a plurality of rows in the first direction.
    Type: Grant
    Filed: March 24, 2022
    Date of Patent: April 16, 2024
    Assignee: SK HYNIX INC.
    Inventors: Sung Lae Oh, Jin Ho Kim, Sang Hyun Sung, Hyun Soo Shin
  • Patent number: 11960752
    Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: April 16, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
  • Publication number: 20240120477
    Abstract: A positive electrode material for a lithium secondary battery has improved electron conductivity and surface stability because oxidation-treated carbon nanotubes are stably attached to the surface of an active material. According to one embodiment the positive electrode material includes a positive electrode active material core made of a Li—Ni—Co—Mn-M-O-based material (M=transition metal) and an oxidized carbon nanotube coating layer formed on the surface of the positive electrode active material core and including 1% to 3% by weight of oxidation-treated carbon nanotubes (OCNT) relative to 100% by weight of the positive electrode active material core.
    Type: Application
    Filed: July 7, 2023
    Publication date: April 11, 2024
    Inventors: Seung Min Oh, Sung Ho Ban, Sang Hun Lee, Chang Hoon Song, Yoon Sung Lee, Ko Eun Kim, Van Chuong Ho, Jun Young Mun
  • Publication number: 20240105918
    Abstract: A positive electrode material for a lithium secondary battery and a manufacturing method therefor are provided. The positive electrode material may have carbon nanotubes stably attached to a surface of an active material and may exhibit increased electron conductivity and improved surface stability. The positive electrode material for a lithium secondary battery may comprises: a positive electrode active material core comprising a Li—Ni—Co—Mn-M-O-based material, where M is a transition metal; and a carbon nanotube coating layer on a surface of the positive electrode active material core. Carbon nanotubes (CNT) may be in an amount of 1-5 wt %, based on 100 wt % of the positive electrode active material core.
    Type: Application
    Filed: July 3, 2023
    Publication date: March 28, 2024
    Inventors: Seung Min Oh, Sung Ho Ban, Sang Hun Lee, Chang Hoon Song, Yoon Sung Lee, Ko Eun Kim, Van Chuong Ho, Jun Young Mun
  • Publication number: 20240076788
    Abstract: Disclosed are an oxidizing electrode, a water electrolysis device including the same and a method for manufacturing the same. According to exemplary embodiments of the present disclosure, there is provided an oxidizing electrode with improved performance at low loadings of noble metals, especially, ruthenium (Ru) and iridium oxide, in which a ruthenium (Ru) layer and an iridium oxide layer formed on a substrate by electrodeposition in a sequential order are supported by electrochemical reaction rather than physical bonding.
    Type: Application
    Filed: January 18, 2023
    Publication date: March 7, 2024
    Inventors: Hyun S. PARK, Jong Hyun JANG, Hee-Young PARK, Su Ji LEE, Sung Jong YOO, Jin Young KIM, Jimin KONG, Jin-ho OH, So Young LEE
  • Publication number: 20240073416
    Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicants: Electronics and Telecommunications Research Institute, Kwangwoon University Industry-Academic Collaboration Foundation, Universily-lndustry Cooperation Group of Kyung Hee University
    Inventors: Sung Chang LIM, Ha Hyun LEE, Se Yoon JEONG, Hui Yong KIM, Suk Hee CHO, Jong Ho KIM, Jin Ho LEE, Jin Soo CHOI, Jin Woong KIM, Chie Teuk AHN, Dong Gyu SIM, Seoung Jun OH, Gwang Hoon PARK, Sea Nae PARK, Chan Woong JEON
  • Patent number: 11873517
    Abstract: The present invention relates to a Candida tropicalis cell line, which comprises a mutant gene, having improved tolerance for cytotoxicity of stromal cells, and a method for producing dicarboxylic acid using the Candida tropicalis cell line. The Candida tropicalis cell line for producing dicarboxylic acid developed according to the present invention has improved tolerance for existing stromal toxicity as well as significantly improved efficiency for producing dicarboxylic acid compared to existing cell lines, thus can be used in biological production of dicarboxylic acid and is expected to have high industrial utility.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: January 16, 2024
    Assignee: Korea University Research and Business Foundation
    Inventors: Kyoung Heon Kim, Thirumalaisamy Babu, Do Hyoung Kim, Jong Hwa Lee, Jung Moo Lee, Ho Chang Lee, Sung Ho Oh, Su Han Kim, Chang Seok Hyun
  • Publication number: 20220033790
    Abstract: The present invention relates to a Candida tropicalis cell line, which comprises a mutant gene, having improved tolerance for cytotoxicity of stromal cells, and a method for producing dicarboxylic acid using the Candida tropicalis cell line. The Candida tropicalis cell line for producing dicarboxylic acid developed according to the present invention has improved tolerance for existing stromal toxicity as well as significantly improved efficiency for producing dicarboxylic acid compared to existing cell lines, thus can be used in biological production of dicarboxylic acid and is expected to have high industrial utility.
    Type: Application
    Filed: December 4, 2019
    Publication date: February 3, 2022
    Applicant: Korea University Research and Business Foundation
    Inventors: Kyoung Heon KIM, Thirumalaisamy BABU, Do Hyoung KIM, Jong Hwa LEE, Jung Moo LEE, Ho Chang LEE, Sung Ho OH, Su Han KIM, Chang Seok HYUN
  • Patent number: 6191370
    Abstract: A ball grid array semiconductor package includes a first substrate having a plurality of first holes and a recess, a second substrate having a plurality of second holes and a third hole, a plurality of conductive balls connecting the first and second substrates by filling the first and second holes, a semiconductor chip on the recess of the first substrate, a first conductive wiring portion electrically connecting the semiconductor chip and the conductive balls, and an encapsulating member encapsulating the semiconductor chip.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: February 20, 2001
    Assignee: LG Semicon Co., Ltd.
    Inventor: Sung Ho Oh