Abstract: A piezoelectric material composition includes a first material doped with 2 mol % to 3 mol % of Mn based on 100 mol % of the total composition, and represented by [Formula 1] as (1?x)Pb(Mg2/3Nb1/3)O3-xPbTiO3 wherein the x is 0.21 to 0.25. A method for preparing a piezoelectric material composition includes: mixing MgNb2O6 and PbO, TiO2, and MnO2 to form a first material doped with Mn and represented by Formula 1 above; mixing the first material and a second material in a solvent to prepare a slurry; tape-casting the slurry to form a piezoelectric sheet; laminating the piezoelectric sheet; and sintering the piezoelectric sheet in an oxygen atmosphere.

Abstract: The method for area-selective growth of a noble metal thin film using atomic layer deposition comprises: a first step of preparing a substrate having a growth area and non-growth area showing a difference in nucleation delay, where the non-growth area generates a noble metal nucleus relatively late compared to the growth area during cycles of repeated atomic layer deposition; a second step of supplying a noble metal precursor and adsorbing the noble metal precursor to the growth area and the non-growth area of the substrate; a third step of converting the noble metal precursor into a noble metal atomic layer by supplying an oxidizing agent; and a step of growing a noble metal thin film in the growth area by repeating a combination of the second and third steps.

Abstract: The present invention relates to a layered structure of a TiO2 thin film having a rutile crystal structure, a method for forming a TiO2 thin film having a rutile crystal structure, and a method for manufacturing a capacitor using the same, which are capable of achieving both deposition of rutile TiO2 at a temperature of 400° C. or less and miniaturization of a device by depositing rutile TiO2 using a material having structural consistency with rutile TiO2, while preventing a material having structural consistency with rutile TiO2 from remaining between a substrate and rutile TiO2.

Abstract: The present invention relates to a capacitor and a method for manufacturing the same that can improve a dielectric property and a leakage current property of the capacitor by enabling the deposition of a crystalline dielectric film under a low process temperature of 500° C. or lower simultaneously with fundamentally blocking the generation of interfacial oxides when depositing oxides having a perovskite crystal structure through atomic layer deposition (ALD). The capacitor according to the present invention is characterized by comprising a lower electrode having a structure in which a platinum ultra-thin film layer is laminated on a ruthenium thin film layer; a dielectric film laminated on the platinum ultra-thin film layer; and an upper electrode laminated on the dielectric film.

Abstract: The present invention relates to a method for area-selective growth of a noble metal thin film using atomic layer deposition, which can increase the growth thickness of a thin film with a high selectivity by inducing the generation of volatile noble metal oxides and suppressing the growth of the thin film in non-growth areas in depositing a noble metal thin film on the growth area of a substrate using nucleation delay.

Abstract: The present invention relates to a transparent anode active material having excellent light transmittance and electrical conductivity characteristics and a manufacturing method thereof, and a lithium ion battery and an all-solid-state lithium thin-film battery based on the same and having excellent charge/discharge capacity and charge/discharge rate, wherein the transparent anode active material according to the present invention is characterized by comprising a material of the following Chemical Formula 1: AgxSiOyN wherein x is 0<x?0.8 and y is 0<y?1.

Abstract: The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.

Abstract: Provided herein is technology relating to measuring temperature and particularly, but not exclusively, to devices, methods, systems, and kits for doing measuring temperature at high resolution, e.g., in living organisms.

Abstract: Provided herein is technology relating to measuring temperature and particularly, but not exclusively, to devices, methods, systems, and kits for doing measuring temperature at high resolution, e.g., in living organisms.