Abstract: Provided are an oncolytic virus for treating brain tumors using a recombinant Newcastle disease virus into which a Newcastle disease virus (NDV) vector-based PTEN (phosphatase and tensin homolog) gene is inserted and a composition for treating brain tumors using the same which can be used for a therapeutic viral agent that can induce reduction of clinical symptoms or partial or complete remission through brain tumor cell death or brain tumor tissue reduction by expressing normal PTEN protein after being infected with brain tumor cells, as a recombinant Newcastle disease virus containing a human PTEN protein gene.

Abstract: Provided are an oncolytic virus for treating brain tumors using a recombinant Newcastle disease virus into which a Newcastle disease virus (NDV) vector-based PTEN (phosphatase and tensin homolog) gene is inserted and a composition for treating brain tumors using the same which can be used for a therapeutic viral agent that can induce reduction of clinical symptoms or partial or complete remission through brain tumor cell death or brain tumor tissue reduction by expressing normal PTEN protein after being infected with brain tumor cells, as a recombinant Newcastle disease virus containing a human PTEN protein gene.

Abstract: An optical proximity correction method includes loading a target layout for a mask, generating a correction density map based on manipulation of flare to correct global errors caused by exposing equipment, generating a flare map via convolution integration of the correction density map and a point spread function (PSF) regarding the flare, and correcting the target layout using the flare map and an OPC model.

Abstract: Provided are an optical proximity correction (OPC) method capable of correcting a slit-effect in an extreme ultraviolet (EUV) exposure process and a method of manufacturing an EUV mask by using the OPC method. The OPC method includes, dividing a transmission cross coefficient (TCC) according to regions of a slit that is used in an EUV exposure process, generating OPC models reflecting the TCCs that are divided, and correcting the OPC method.

Abstract: An optical proximity correction method includes loading a target layout for a mask, generating a correction density map based on manipulation of flare to correct global errors caused by exposing equipment, generating a flare map via convolution integration of the correction density map and a point spread function (PSF) regarding the flare, and correcting the target layout using the flare map and an OPC model.

Abstract: Provided are an optical proximity correction (OPC) method capable of correcting a slit-effect in an extreme ultraviolet (EUV) exposure process and a method of manufacturing an EUV mask by using the OPC method. The OPC method includes, dividing a transmission cross coefficient (TCC) according to regions of a slit that is used in an EUV exposure process, generating OPC models reflecting the TCCs that are divided, and correcting the OPC method.

Abstract: The present invention relates to an antiglare coating composition, and more particularly to an antiglare coating composition comprising an acrylate binder resin, fine particles whose refractive index varies between 0.2 to 0.5 from the refractive index of the binder resin and whose average particle size ranges from 0.05 to 1 ?m, and fine particles whose refractive index varies between 0.1 and whose average particle size ranges from 0.5 to 3 ?m. A coating composition of the present invention has a superior antiglare effect, reduced image distortion, high contrast, and enhanced image clarity when applied to a high-resolution display by scattering and inducing internal diffusion of light.

Abstract: A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

Abstract: The present invention relates to a coating composition for forming an anti-reflective coating layer for a display device, comprising a fluorinated silane with low surface tension, a conductive polymer with antistatic properties, water, and a solvent. Thus, the coating film of the present invention prepared by coating the composition has high anti-reflection, excellent stain resistance to liquid-phase stains such as fingerprints and the solid-phase stains such as dust by controlling the refractive index, surface energy, and conductivity, and thus can be usefully applied to the outermost side of a display device, regardless of the type of substrates such as a Braun tube or a flat display film and the presence of other coating layers such as a hard coating layer and an anti-glare coating layer.

Abstract: A method of verifying electron beam data used to produce a photomask comprises dividing design data for the photomask into a plurality of repetitive regions, sequentially converting the sequential regions into electron beam data, and determining whether electron beam data corresponding to a current repetitive region is substantially identical to electron beam data corresponding to a previous repetitive region.

Abstract: A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

Abstract: The present invention relates to an antiglare coating composition, and more particularly to an antiglare coating composition comprising an acrylate binder resin, fine particles whose refractive index varies between 0.2 to 0.5 from the refractive index of the binder resin and whose average particle size ranges from 0.05 to 1 ?m, and fine particles whose refractive index varies between 0.1 and whose average particle size ranges from 0.5 to 3 ?m. A coating composition of the present invention has a superior antiglare effect, reduced image distortion, high contrast, and enhanced image clarity when applied to a high-resolution display by scattering and inducing internal diffusion of light.

Abstract: A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences.

Abstract: The present invention relates to a coating composition for forming an anti-reflective coating layer for a display device, comprising a fluorinated silane with low surface tension, a conductive polymer with antistatic properties, water, and a solvent. Thus, the coating film of the present invention prepared by coating the composition has high anti-reflection, excellent stain resistance to liquid-phase stains such as fingerprints and the solid-phase stains such as dust by controlling the refractive index, surface energy, and conductivity, and thus can be usefully applied to the outermost side of a display device, regardless of the type of substrates such as a Braun tube or a flat display film and the presence of other coating layers such as a hard coating layer and an anti-glare coating layer.

Abstract: A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences.

Abstract: A coating composition having excellent antifogging property, good abrasion resistance, improved adhesion to the substrate and good water resistance, which comprises an epoxy functional organosilane or the hydrolysate or condensate thereof; an amino functional organosilane or the hydrolysate or condensate thereof; a hydrophilic (meth)acrylate monomer, or a copolymer of two components selected from the hydrophilic (meth)acrylate monomer, another hydrophilic monomer and an organosilane and/or a terpolymer of the three components; a curing catalyst; and, optionally, a multi-functional (meth)acrylate monomer having at least two (meth)acryl groups and a radical polymerization initiator.

Abstract: A coating composition having excellent antifogging property, good abrasion resistance, improved adhesion to the substrate and good water resistance, which comprises an epoxy functional organosilane or the hydrolysate or condensate thereof; an amino functional organosilane or the hydrolysate or condensate thereof; a hydrophilic (meth)acrylate monomer, or a copolymer of two components selected from the hydrophilic (meth)acrylate monomer, another hydrophilic monomer and an organosilane and/or a terpolymer of the three components; a curing catalyst; and, optionally, a multi-functional (meth)acrylate monomer having at least two (meth)acryl groups and a radical polymerization initiator.