Abstract: Disclosed is a console operation device including a base plate, at least one solenoid disposed in the base plate, a guide rail disposed in front of the base plate, and a manipulator mounted on the guide rail to move on the guide rail, wherein the at least one solenoid includes a first magnet having a polarity, wherein the manipulator includes a second magnet having a polarity, wherein the manipulator is configured to be moved based on the polarities of the first and second magnets.

Abstract: Heat exchanger comprising a pair of header tanks which are arranged to be spaced apart from each other, a plurality of tubes formed in two columns in the width direction so that both ends are connected to the pair of header tanks, and a plurality of fins interposed between the tubes and coupled to the tubes. The header tank is configured so that a first tank and a second tank are respectively coupled to one header having a central bent portion in the center portion in the width direction, which provides easy assembling of headers and tanks of two heat exchangers. Thermal stress caused by the temperature difference between two heat exchanging media is blocked so that damage to a coupling portion where the two heat exchangers are coupled or a bonding portion formed through brazing can be prevented. Thus, leakage of the heat exchanging medium can be prevented.

Abstract: Provided is a method for regenerating a tool path on the basis of output data feedback in order to improve 3D printing output reliability. A tool path regeneration system according to an embodiment of the present invention comprises: a slicing unit for configuring a process parameter for 3D printing and performing slicing for 3D model data on the basis of the configured process parameter to generate a job file; and an output unit for performing 3D printing on the basis of the generated job file and collecting output data that is output while the 3D printing is performed, wherein the slicing unit comprises an output data analysis module for performing monitoring on the basis of the output data received from the output unit and determining whether to correct the process parameter on the basis of the result of the monitoring.

Abstract: A flash memory device having improved gate capacitive coupling ratio between a floating gate and a control gate and a fabrication method therefor. The disclosed flash memory device comprises a semiconductor substrate having a first trench with a width including an active region and an isolation region at either side thereof; an isolation layer formed on the isolation regions of the first trench; a second trench in the first trench defined by the isolation layer and exposing only the active region; a groove-shaped floating gate formed on the surface of the second trench and having a tunnel oxide layer on the lower part thereof; a control gate formed on the floating gate and having a gate insulating layer on the lower part thereof; a source region and a drain region formed in the substrate at both sides of the floating gate; and metal wirings formed to be in contact with the source and drain regions, respectively, through the isolation layer on the substrate.

Abstract: A flash memory device having improved gate capacitive coupling ratio between a floating gate and a control gate and a fabrication method therefor. The disclosed flash memory device comprises a semiconductor substrate having a first trench with a width including an active region and an isolation region at either side thereof; an isolation layer formed on the isolation regions of the first trench; a second trench in the first trench defined by the isolation layer and exposing only the active region; a groove-shaped floating gate formed on the surface of the second trench and having a tunnel oxide layer on the lower part thereof; a control gate formed on the floating gate and having a gate insulating layer on the lower part thereof; a source region and a drain region formed in the substrate at both sides of the floating gate; and metal wirings formed to be in contact with the source and drain regions, respectively, through the isolation layer on the substrate.

Abstract: A flash memory device having improved gate capacitive coupling ratio between a floating gate and a control gate and a fabrication method therefor. The disclosed flash memory device comprises a semiconductor substrate having a first trench with a width including an active region and an isolation region at either side thereof; an isolation layer formed on the isolation regions of the first trench; a second trench in the first trench defined by the isolation layer and exposing only the active region; a groove-shaped floating gate formed on the surface of the second trench and having a tunnel oxide layer on the lower part thereof; a control gate formed on the floating gate and having a gate insulating layer on the lower part thereof; a source region and a drain region formed in the substrate at both sides of the floating gate; and metal wirings formed to be in contact with the source and drain regions, respectively, through the isolation layer on the substrate.

Abstract: A flash memory device having improved gate capacitive coupling ratio between a floating gate and a control gate and a fabrication method therefor. The disclosed flash memory device comprises a semiconductor substrate having a first trench with a width including an active region and an isolation region at either side thereof; an isolation layer formed on the isolation regions of the first trench; a second trench in the first trench defined by the isolation layer and exposing only the active region; a groove-shaped floating gate formed on the surface of the second trench and having a tunnel oxide layer on the lower part thereof; a control gate formed on the floating gate and having a gate insulating layer on the lower part thereof; a source region and a drain region formed in the substrate at both sides of the floating gate; and metal wirings formed to be in contact with the source and drain regions, respectively, through the isolation layer on the substrate.

Abstract: There is disclosed a method of manufacturing a flash memory device. In order to solve the problem that the coupling ratio of a gate electrode is low in a stack gate-type flash memory device, the present invention allows a control gate to surround a control gate from its to its bottom. Therefore, the present invention can increase the contact area of the floating gate and the control gate and can also increase the coupling ratio of the gate electrode.