Abstract: A camera module includes a first lens module and a second lens module, disposed in a first direction intersecting an optical axis; an image sensor configured to convert an optical signal incident through the first lens module and the second lens module into an electrical signal; and a driver configured to move the image sensor in the first direction.

Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.

Abstract: An electronic component module includes a semiconductor package having a first surface provided as a mounting surface and a second surface opposing the first surface, and including a semiconductor chip, a component package having a first surface facing the second surface of the semiconductor package, and a second surface opposing the first surface of the component package, the component package including a passive component, and a connector disposed on the second surface of the component package and having a connection surface configured to be mechanically coupled to an external device, the connector including a plurality of connection lines arranged on the connection surface.

Abstract: An electronic component module includes a semiconductor package having a first surface provided as a mounting surface and a second surface opposing the first surface, and including a semiconductor chip, a component package having a first surface facing the second surface of the semiconductor package, and a second surface opposing the first surface of the component package, the component package including a passive component, and a connector disposed on the second surface of the component package and having a connection surface configured to be mechanically coupled to an external device, the connector including a plurality of connection lines arranged on the connection surface.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: Provided is a composition for etching a silicon nitride film, which contains inorganic acid, silicon compound, and water, and does not contain fluorine, and which can selectively remove the silicon nitride film, while minimizing damages to the underlying metal film and the etching rate of the silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: A method of forming an align key in a well structure formation process is provided. The method includes: providing a semiconductor substrate having an align key region and a first well region and forming a first ion implantation mask on the substrate. The first ion implantation mask has a groove exposing a portion of the align key region and covering the first well region. The method further includes etching the exposed align key region and the first ion implantation mask of the first well region to form a trench type align key in the align key region and a second ion implantation mask exposing the first well region, and implanting impurities into the first well region exposed by the second ion implantation mask to form a first well in the first well region.