Abstract: An image sensor includes: a first device isolation part in a substrate and defining an active region; a first gate electrode having a first and second gate sidewalls; and a first impurity region and a second impurity region adjacent to the first and second gate sidewalls, wherein the active region includes: a first active central part; a first active protrusion; and a second active protrusion, wherein the first device isolation part has a first isolation sidewall overlapping the first active central part, and wherein a first straight line is at least partially spaced apart from the first isolation sidewall, wherein the first straight line links a first point, at which the first active protrusion meets the first active central part, to a second point, at which the second active protrusion meets the first active central part.

Abstract: Provided are a polarizer protective film comprising a polymeric film and a coating layer formed on at least one surface of the polymeric film, where the coating layer has a plurality of concave embossed patterns and has a surface roughness of 2.0 nm to 20.0 nm, and a manufacturing method thereof.

Abstract: An image sensor includes a substrate including a first face and a second face, the second face being opposite the first face in a first direction; a photoelectric conversion area disposed in the substrate; an active area disposed in the substrate and on the photoelectric conversion area; an element isolation pattern extending from the first face of the substrate into the substrate and defining the active area; and a transfer gate electrode including: a first portion extending from the first face of the substrate and extending through the element isolation pattern; and a second portion disposed on the active area, wherein the first portion extends through a bottom face of the element isolation pattern, wherein a vertical level of a bottom face of the first portion is lower than a vertical level of the bottom face of the element isolation pattern.

Abstract: An image sensor may include a substrate having first and second surfaces opposite to each other and including unit pixel regions and impurity regions near the first surface, a device isolation pattern provided on the first surface to define the impurity regions, and an interconnection layer including an insulating layer covering the first surface of the substrate, interconnection lines on the insulating layer, and a penetration structure penetrating the insulating layer. The penetration structure may include a first pattern connected to one of the impurity regions and in contact with at least a portion of the device isolation pattern, a second pattern provided on the first pattern and in contact with the interconnection lines, and a third pattern provided between the first and second patterns. A top surface of the first pattern may be higher than that of the device isolation pattern.

Abstract: An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.

Abstract: An image sensor includes: a first device isolation part in a substrate and defining an active region; a first gate electrode having a first and second gate sidewalls; and a first impurity region and a second impurity region adjacent to the first and second gate sidewalls, wherein the active region includes: a first active central part; a first active protrusion; and a second active protrusion, wherein the first device isolation part has a first isolation sidewall overlapping the first active central part, and wherein a first straight line is at least partially spaced apart from the first isolation sidewall, wherein the first straight line links a first point, at which the first active protrusion meets the first active central part, to a second point, at which the second active protrusion meets the first active central part.

Abstract: An image sensor may include a substrate having first and second surfaces opposite to each other and including unit pixel regions and impurity regions near the first surface, a device isolation pattern provided on the first surface to define the impurity regions, and an interconnection layer including an insulating layer covering the first surface of the substrate, interconnection lines on the insulating layer, and a penetration structure penetrating the insulating layer. The penetration structure may include a first pattern connected to one of the impurity regions and in contact with at least a portion of the device isolation pattern, a second pattern provided on the first pattern and in contact with the interconnection lines, and a third pattern provided between the first and second patterns. A top surface of the first pattern may be higher than that of the device isolation pattern.

Abstract: An image sensor includes a substrate which includes a plurality of unit pixels. Each of the plurality of unit pixels includes a photoelectric conversion layer. A pixel separation pattern is disposed in the substrate and has a and shape that includes a plurality of grid points. The pixel separation pattern is configured to separate each of the plurality of unit pixels from each other. A support structure is disposed in the substrate and is positioned to correspond to the plurality of grid points of the pixel separation pattern. The support structure is configured to support adjacent unit pixels of the plurality of unit pixels.

Abstract: The present invention generally relates to a method for traffic control, and an electronic device therefor. An operation method of an electronic device may comprise the steps of: measuring the temperature of the electronic device through at least one sensor; checking an operation state of at least one application being executed in the electronic device; and controlling data throughput for each of the at least one application on the basis of the operation state of the at least one application if the measured temperature is equal to or greater than a reference value. Other various embodiments are possible.

Abstract: Provided are a polarizer protective film comprising a polymeric film and a coating layer formed on at least one surface of the polymeric film, where the coating layer has a plurality of concave embossed patterns and has a surface roughness of 2.0 nm to 20.0 nm, and a manufacturing method thereof.

Abstract: An image sensor chip may include a first sub-chip, a second sub-chip on the first sub-chip, and an interconnector between the first and second sub-chips. The first sub-chip may include a first substrate, a bottom electrode on a first region of the first substrate, and a first capacitor on the bottom electrode. The first capacitor may include a plurality of first electrodes vertically extending from a top surface of the bottom electrode, a second electrode on the first electrodes, and a first dielectric layer between the second electrode and the first electrodes. The second sub-chip may include a pixel array configured to convert incident light into an electrical signal. The pixel array may be electrically connected through the interconnector to the first capacitor.

Abstract: The present invention relates to a method for preparing a polarizer protecting film. More specifically, the present invention relates to a method for preparing a polarizer protecting film capable of exhibiting excellent physical and optical properties and of preventing damages of a lower polarizer plate caused by a prism sheet.

Abstract: A method and system for handling a wireless communication in a Voice over Wireless Fidelity (VoWiFi) system including a plurality of nodes is provided. The method includes detecting, by a VoWiFi controller, a wireless connection between an electronic device and a first node from among the plurality of nodes; determining, by the VoWiFi controller, a performance of each of the plurality of nodes; detecting, by the VoWiFi controller, that a first performance of the first node is less than a second performance of a second node from among the plurality of nodes; and performing, by the VoWiFi controller, a handover of the electronic device from the first node to the second node.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced apart from each other in a first direction within the substrate, a first gate electrode filling the first recess and protruding above the substrate, a second gate electrode filling the second recess and protruding above the substrate, a first source/drain formed between the first and second recesses, a second source/drain formed in an opposite direction to the first source/drain with respect to the first recess, and a third source/drain formed in an opposite direction to the first source/drain with respect to the second recess and electrically connected to the second source/drain.

Abstract: The present invention generally relates to a method for traffic control, and an electronic device therefor. An operation method of an electronic device may comprise the steps of: measuring the temperature of the electronic device through at least one sensor; checking an operation state of at least one application being executed in the electronic device; and controlling data throughput for each of the at least one application on the basis of the operation state of the at least one application if the measured temperature is equal to or greater than a reference value. Other various embodiments are possible.

Abstract: An image sensor chip may include a first sub-chip, a second sub-chip on the first sub-chip, and an interconnector between the first and second sub-chips. The first sub-chip may include a first substrate, a bottom electrode on a first region of the first substrate, and a first capacitor on the bottom electrode. The first capacitor may include a plurality of first electrodes vertically extending from a top surface of the bottom electrode, a second electrode on the first electrodes, and a first dielectric layer between the second electrode and the first electrodes. The second sub-chip may include a pixel array configured to convert incident light into an electrical signal. The pixel array may be electrically connected through the interconnector to the first capacitor.

Abstract: A method and system for handling a wireless communication in a Voice over Wireless Fidelity (VoWiFi) system including a plurality of nodes is provided. The method includes detecting, by a VoWiFi controller, a wireless connection between an electronic device and a first node from among the plurality of nodes; determining, by the VoWiFi controller, a performance of each of the plurality of nodes; detecting, by the VoWiFi controller, that a first performance of the first node is less than a second performance of a second node from among the plurality of nodes; and performing, by the VoWiFi controller, a handover of the electronic device from the first node to the second node.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced apart from each other in a first direction within the substrate, a first gate electrode filling the first recess and protruding above the substrate, a second gate electrode filling the second recess and protruding above the substrate, a first source/drain formed between the first and second recesses, a second source/drain formed in an opposite direction to the first source/drain with respect to the first recess, and a third source/drain formed in an opposite direction to the first source/drain with respect to the second recess and electrically connected to the second source/drain.

Abstract: A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of the active patterns extending in a diagonal direction with respect to the first direction; a plurality of gate structures on the substrate, the gate structures extending in a second direction substantially perpendicular to the first direction; a source line structure electrically connected to source regions of the respective active patterns, the source line structure extending in the first direction; a plurality of magnetic tunnel junction (MTJ) structures electrically connected to drain regions of the respective active patterns, the MTJ structures being spaced apart from each other; and a bit line structure electrically connected to the MTJ structures in respective memory cells, the memory cells sharing with the source line structure.

Abstract: The present invention relates to a method for preparing a polarizer protecting film. More specifically, the present invention relates to a method for preparing a polarizer protecting film capable of exhibiting excellent physical and optical properties and of preventing damages of a lower polarizer plate caused by a prism sheet.