Abstract: A clock and data recovery device includes an equalizer that compensates for channel loss of input data, a phase detector that compares data output from the equalizer and a fed back clock and outputs an up signal and a down signal, a charge pump that operates according to the up signal and the down signal to output a control signal, a loop filter that removes a high-frequency component included in the control signal output from the charge pump, a voltage-controlled oscillator that changes a frequency of the clock and outputs the clock according to the control signal from which the high-frequency component is removed, and a voltage-controlled oscillator buffer that adjusts a slew rate of the clock output by the voltage-controlled oscillator according to the up signal and the down signal directly received from the phase detector and transmits the clock to the phase detector.

Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: A clock and data recovery device includes an equalizer that compensates for channel loss of input data, a phase detector that compares a data output from the equalizer with a clock fed back and outputs an up signal and a down signal, a charge pump that operates according to the up signal and the down signal and outputs a control signal, a loop filter that removes high-frequency components included in the control signal, a voltage controlled oscillator that changes a frequency of the clock and outputs a clock with changed frequency, and a data phase adjuster that synchronizes the clock output from the voltage controlled oscillator and the data output from the equalizer by adjusting a phase of the data output from the equalizer by receiving the up signal and the down signal output from the phase detector.

Abstract: Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate having a first region and a second region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a barrier layer disposed on the semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode disposed therebetween, which are disposed on the barrier layer in the first region, a second source electrode, a second drain electrode, and a second gate electrode disposed therebetween, which are disposed on the barrier layer in the second region, and a ferroelectric pattern interposed between the first gate electrode and the barrier layer.

Abstract: Provided is a single pole double through (SPDT) switch including a series switching unit including first and second series switching elements commonly connected to a common input port, and a shunt switching unit including a plurality of shunt switching elements connected in parallel to a first signal path connecting the common input port to a first output port and a second signal path connecting the common input port to a second output port, wherein first and second inductors are respectively connected to gate terminals of the first and second series switching elements.

Abstract: An apparatus and method for generating an electrical circuit of semiconductor channel resistor including a first passive element part including a resistor and a capacitor connected in parallel between a first port and a second port, and an ohmic resistor connected in series to the resistor and the capacitor which are connected in parallel are provided. The apparatus includes a substrate selection part configured to receive a selected substrate item; a resistor selection part configured to receive a selected resistor item; a capacitor selection part configured to receive a selected capacitor item; and a circuit generating part configured to generate an electrical circuit from the selected substrate item, the selected resistor item, and the selected capacitor item.

Abstract: A method is provided for the automatic control of cycling speed in a human. The method comprises: estimating the subject's actual cycling speed using one or more sensors to thereby obtain a measured speed; determining an error comprising a difference between a desired speed and the measured speed; and outputting, to the subject, a stimulus frequency signal wherein the stimulus frequency signal is based on the error in such a manner that when the subject pedals in a manner that matches a frequency of the stimulus frequency signal, the subject's actual speed controllably tracks the desired speed.

Abstract: A method is provided for the automatic control of cycling speed in a human. The method comprises: estimating the subject's actual cycling speed using one or more sensors to thereby obtain a measured speed; determining an error comprising a difference between a desired speed and the measured speed; and outputting, to the subject, a stimulus frequency signal wherein the stimulus frequency signal is based on the error in such a manner that when the subject pedals in a manner that matches a frequency of the stimulus frequency signal, the subject's actual speed controllably tracks the desired speed.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate having a first region and a second region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a barrier layer disposed on the semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode disposed therebetween, which are disposed on the barrier layer in the first region, a second source electrode, a second drain electrode, and a second gate electrode disposed therebetween, which are disposed on the barrier layer in the second region, and a ferroelectric pattern interposed between the first gate electrode and the barrier layer.

Abstract: A method is provided for the automatic control of cycling speed in a human. The method comprises: estimating the subject's actual cycling speed using one or more sensors to thereby obtain a measured speed; determining an error comprising a difference between a desired speed and the measured speed; and outputting, to the subject, a stimulus frequency signal wherein the stimulus frequency signal is based on the error in such a manner that when the subject pedals in a manner that matches a frequency of the stimulus frequency signal, the subject's actual speed controllably tracks the desired speed.

Abstract: A method is provided for the automatic control of cycling speed in a human. The method comprises: estimating the subject's actual cycling speed using one or more sensors to thereby obtain a measured speed; determining an error comprising a difference between a desired speed and the measured speed; and outputting, to the subject, a stimulus frequency signal wherein the stimulus frequency signal is based on the error in such a manner that when the subject pedals in a manner that matches a frequency of the stimulus frequency signal, the subject's actual speed controllably tracks the desired speed.

Abstract: A method is provided for guiding locomotion speed in a human or other animal subject. The method comprises: estimating the subject's actual locomotion speed using one or more sensors to thereby obtain a measured speed; determining an error comprising a difference between a desired speed and the measured speed; and outputting, to the subject, a stimulus frequency signal wherein the stimulus frequency signal is based on the error in such a manner that when the subject ambulates in a manner that matches a frequency of the stimulus frequency signal, the subject's actual speed controllably tracks the desired speed.

Abstract: A method is provided for the automatic control of locomotion speed in a human or other animal subject. The method comprises: estimating the subject's actual locomotion speed using one or more sensors to thereby obtain a measured speed; determining an error comprising a difference between a desired speed and the measured speed; and outputting, to the subject, a stimulus frequency signal wherein the stimulus frequency signal is based on the error in such a manner that when the subject ambulates in a manner that matches a frequency of the stimulus frequency signal, the subject's actual speed controllably tracks the desired speed.

Abstract: A surface mounted resonator having a cap means and a method of forming the same using an insulating ceramic substrate are provided, which can simplify a process of fabricating the surface mounted resonator.