Patents by Inventor Sungjoo Lee
Sungjoo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11956890Abstract: A circuit board includes a first insulating layer; a first wiring pattern and a second wiring pattern each formed to be side to side with each other on an upper surface of the first insulating layer; a second insulating layer formed on the upper surface of the first insulating layer to cover the first and second wiring patterns; a third wiring pattern formed on an upper surface of the second insulating layer to overlap the first wiring pattern in a vertical direction; a fourth wiring pattern formed on the upper surface of the second insulating layer to overlap the second wiring pattern in the vertical direction; a first via passing through the second insulating layer and connecting the first and fourth wiring patterns; and a second via passing through the second insulating layer and connecting the second and third wiring patterns.Type: GrantFiled: April 14, 2022Date of Patent: April 9, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Yunho Lee, Yoojeong Kwon, Kyoungsun Kim, Dongyeop Kim, Sungjoo Park
-
Publication number: 20240074286Abstract: A display device includes a circuit layer and a display element layer on the circuit layer. The display element layer includes a light-emitting element and a pixel-defining film, through which a pixel opening is defined, and the light-emitting element includes a first electrode exposed through the pixel opening, a second electrode disposed opposite to the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode. The first electrode includes a metal layer and a graphene layer disposed on an upper surface of the metal layer, and the metal layer and the graphene layer each have a hexagonal closed packed structure.Type: ApplicationFiled: August 2, 2023Publication date: February 29, 2024Inventors: HYUNEOK SHIN, TAEWOOK KANG, SUNGJOO KWON, JOONYONG PARK, JUHYUN LEE, CHANGHEE LEE, SAMTAE JEONG, YUNG BIN CHUNG
-
Publication number: 20230140466Abstract: Disclosed are a negative transconductance device and a multi-valued memory device using the same. The negative transconductance includes a monolithic WSe2 semiconductor thin film; a first doped layer disposed on a first area of the WSe2 semiconductor thin film; a second doped layer disposed on a second area of the WSe2 semiconductor thin film so as to supply holes to the second area, wherein the second area is spaced apart from the first area; a first electrode electrically connected to the first area of the WSe2 semiconductor thin film; a second electrode electrically connected to the second area of the WSe2 semiconductor thin film; and a third electrode for applying a gate voltage to the first area and the second area of the WSe2 semiconductor thin film, and to a third area thereof located between the first and second areas.Type: ApplicationFiled: October 28, 2022Publication date: May 4, 2023Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Sungjoo LEE, Hyeonje SON, Haeju CHOI, Taeho KANG, Chanwoo KANG, Sungpyo BAEK, Hyun Ho YOO, Jae Hyeok JU
-
Patent number: 11502129Abstract: A three-dimensional semiconductor integrated circuit includes a first CMOS circuit layer including a plurality of first CMOS circuit blocks; an insulating layer disposed on a top of the first CMOS circuit layer; a plurality of atomic switching elements respectively disposed inside via holes extending through the insulating layer, wherein the plurality of atomic switching elements are electrically connected to the plurality of first CMOS circuit blocks, respectively; a driver circuit layer disposed on a top of the insulating layer, and electrically connected with the atomic switching elements, wherein the driver circuit layer include a driver circuit for selectively turning on and off the atomic switching elements; and a second CMOS circuit disposed on a top of the driver circuit layer and connected to the atomic switching elements.Type: GrantFiled: February 15, 2021Date of Patent: November 15, 2022Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Sungjoo Lee, Jae Hyeok Ju, Jin-Hong Park, Sungpyo Baek
-
Publication number: 20220271057Abstract: A semiconductor memory device capable of improving performance by the use of a charge storage layer including a ferroelectric material is provided. The semiconductor memory device includes a substrate, a tunnel insulating layer contacting the substrate, on the substrate, a charge storage layer contacting the tunnel insulating layer and including a ferroelectric material, on the tunnel insulating layer, a barrier insulating layer contacting the charge storage layer, on the charge storage layer, and a gate electrode contacting the barrier insulating layer, on the barrier insulating layer.Type: ApplicationFiled: February 7, 2022Publication date: August 25, 2022Applicant: RESEARCH AND BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Sang-Yong PARK, Jin-Hong PARK, Sungjoo LEE
-
Publication number: 20210257412Abstract: A three-dimensional semiconductor integrated circuit includes a first CMOS circuit layer including a plurality of first CMOS circuit blocks; an insulating layer disposed on a top of the first CMOS circuit layer; a plurality of atomic switching elements respectively disposed inside via holes extending through the insulating layer, wherein the plurality of atomic switching elements are electrically connected to the plurality of first CMOS circuit blocks, respectively; a driver circuit layer disposed on a top of the insulating layer, and electrically connected with the atomic switching elements, wherein the driver circuit layer include a driver circuit for selectively turning on and off the atomic switching elements; and a second CMOS circuit disposed on a top of the driver circuit layer and connected to the atomic switching elements.Type: ApplicationFiled: February 15, 2021Publication date: August 19, 2021Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Sungjoo LEE, Jae Hyeok JU, Jin-Hong PARK, Sungpyo BAEK
-
Patent number: 10700273Abstract: In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.Type: GrantFiled: September 20, 2018Date of Patent: June 30, 2020Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Sungjoo Lee, Woo-Seok Choe, Sung Kyu Jang
-
Patent number: 10608095Abstract: The present disclosure provides a multi-functional electronic device with a black phosphorous-based single channel, wherein the device comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.Type: GrantFiled: July 25, 2018Date of Patent: March 31, 2020Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Sungjoo Lee, Jingyuan Jia, Sumin Jeon, Jin-Hong Park
-
Publication number: 20190097130Abstract: In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.Type: ApplicationFiled: September 20, 2018Publication date: March 28, 2019Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Sungjoo LEE, Woo-Seok CHOE, Sung Kyu JANG
-
Publication number: 20190097014Abstract: The present disclosure provides a multi-functional electronic device with a black phosphorous-based single channel, wherein the device comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.Type: ApplicationFiled: July 25, 2018Publication date: March 28, 2019Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Sungjoo LEE, Jingyuan JIA, Sumin JEON, Jin-Hong PARK
-
Patent number: 9963346Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 ?m to about 1,000 ?m. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 ?m to about 1,000 ?m by annealing the pre-annealed metal thin film at a second temperature.Type: GrantFiled: February 8, 2016Date of Patent: May 8, 2018Assignees: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Hwansoo Suh, Youngjae Song, Qinke Wu, Sungjoo Lee, Minwoo Kim, Sangwoo Park
-
Publication number: 20160237558Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 ?m to about 1,000 ?m.Type: ApplicationFiled: February 8, 2016Publication date: August 18, 2016Applicants: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Hwansoo SUH, Youngjae SONG, Qinke WU, Sungjoo LEE, Minwoo KIM, Sangwoo PARK
-
Publication number: 20150333520Abstract: Disclosed is a distribution board for independent microgrid capable of driving a power loads at a remote place such as an island area or a mountainous area etc. with a power generated by using a renewable energy generating device and a diesel generating device using a fossil fuel, preventing a power failure etc. by selectively or successively blocking other loads or unimportant loads among the power loads at need, and stably recovering power supply by preventing an excessive inrush current by successive power supply in a re-driving process.Type: ApplicationFiled: May 17, 2015Publication date: November 19, 2015Inventors: JONGBO AHN, SUNGJOO LEE, Ki Nam Kwon
-
Publication number: 20150137251Abstract: A semiconductor device includes a substrate and a device isolation pattern extending from a surface of the substrate into the substrate. The device isolation pattern has an electrically negative property and a physically tensile property. The device isolation pattern delimits an active region of the substrate. A transistor is provided at the active region and has a channel region formed by part of the active region.Type: ApplicationFiled: August 7, 2014Publication date: May 21, 2015Inventors: SUNGHEE LEE, EUI-CHUL JEONG, NARA KIM, SEUNG HWAN KIM, DONGWOO WOO, SANGHOON LEE, SUNGJOO LEE
-
Publication number: 20090179281Abstract: An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.Type: ApplicationFiled: February 4, 2009Publication date: July 16, 2009Inventors: Shiyang Zhu, Jingde Chen, Sungjoo Lee, Ming Fu Li, Jagar Singh, Chungxiang Zhu, Dim-Lee Kwong
-
Publication number: 20090163005Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.Type: ApplicationFiled: February 9, 2009Publication date: June 25, 2009Inventors: Shiyang Zhu, Jingde Chen, Sungjoo Lee, Ming Fu Li, Jagar Singh, Chunxiang Zhu, Dim-Lee Kwong
-
Patent number: 7504328Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.Type: GrantFiled: May 10, 2005Date of Patent: March 17, 2009Assignee: National University of SingaporeInventors: Shiyang Zhu, Jingde Chen, Sungjoo Lee, Ming Fu Li, Jagar Singh, Chunxiang Zhu, Dim-Lee Kwong
-
Publication number: 20060260676Abstract: A photodetector and a method of manufacturing the photodetector are provided. The photodetector comprises a first semiconductor layer; a dielectric layer formed on the first semiconductor layer, the dielectric layer comprising a plurality of openings; a second semiconductor layer formed on the dielectric layer, such that portions of the second semiconductor layer are in contact with the first semiconductor layer at the openings; wherein regions of structural disorder with dislocations exist at interfaces between the first and second semiconductor layers at the openings.Type: ApplicationFiled: May 18, 2006Publication date: November 23, 2006Inventors: Fei Gao, CheeWee Liu, Sungjoo Lee, Dim-Lee Kwong