Abstract: A method of cleaning a substrate processing apparatus that provides a processing space for accommodating a process wafer and includes a substrate support including an internal electrode, the method includes disposing a cover wafer on an upper surface of the substrate support; fixing the cover wafer to the substrate support using the internal electrode of the substrate support; plasma cleaning the processing space; and removing a current of the internal electrode and removing the cover wafer, wherein the cover wafer includes silicon carbide (SiC), a lower surface of the cover wafer is in contact with the substrate support, and an average roughness of an upper surface of the cover wafer is less than an average roughness of an upper surface of the process wafer.

Abstract: A plasma deposition apparatus includes a process chamber; a substrate stage including an electrostatic chuck, a lower temperature maintenance portion and a lower electrode, in which the electrostatic chuck is configured to hold a substrate using an electrostatic adsorption force, and the low temperature maintaining portion is configured to cool the substrate; an exhaust portion configured to exhaust a gas inside the process chamber; an upper electrode disposed on an upper portion of the process chamber facing the lower electrode; a gas supply portion configured to supply a reaction gas into the process chamber, a first power supply configured to generate plasma; and a second power supply configured to control an ion energy of the plasma.

Abstract: A method of cleaning a substrate processing apparatus that provides a processing space for accommodating a process wafer and includes a substrate support including an internal electrode, the method includes disposing a cover wafer on an upper surface of the substrate support; fixing the cover wafer to the substrate support using the internal electrode of the substrate support; plasma cleaning the processing space; and removing a current of the internal electrode and removing the cover wafer, wherein the cover wafer includes silicon carbide (SiC), a lower surface of the cover wafer is in contact with the substrate support, and an average roughness of an upper surface of the cover wafer is less than an average roughness of an upper surface of the process wafer.

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.