Abstract: An embodiment solid electrolyte includes a first compound and a second compound. The first compound is represented by a first chemical formula Li7-aPS6-a(X11-bX2b)a, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, and wherein 0<a?2 and 0<b<1, and the second compound is represented by a second chemical formula Li7-cP1-2dMdS6-c-3d(X11-eX2e)c, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, wherein M represents Ge, Si, Sn, or any combination thereof, and wherein 0<c?2, 0<d<0.5, and 0<e<1.

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Abstract: A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

Abstract: The present disclosure relates to a safe foothold apparatus for a platform, wherein a foothold plate protrudes from and is retracted into the platform by moving along a curved rotational route so that the foothold plate is re-retracted into the platform safely due to the operation structure even when a collision occurs between a train and the foothold plate in a protrusion state. Therefore, the present invention can prevent the foothold plate and the train from being damaged, thereby establishing safer boarding/alighting environment and stably maintaining the operational state of the foothold plate by using a frictional contact module even in an emergency situation. Accordingly, the present invention can improve safety through a simple structure, facilitate the manufacturing and establishment work by simplifying a structure of a manual operation module, reduce the size of a whole apparatus, and far enhance the operational stability.

Abstract: A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.

Abstract: A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.

Abstract: A universal serial bus (USB) type wireless data card is used for wireless communication in a multi-in/multi-out (MIMO) environment. The USB type wireless data card includes a card body. A USB connector is disposed at one end of the card body and connectable to a USB port of an electronic device. An antenna part includes first and second antennae connected to the card body such that the first and second antennae may be received in the card body and may be extended from the card body to move away from the card body and be spaced apart from the USB connector.

Abstract: Noise is introduced into test inputs and voltage supplies provided to logic devices while under going testing by modulating a test voltage output with a noise signal to produce the test input. In particular, a noise signal and a test voltage output are generated. The test voltage output is modulated with the noise signal to provide a test input to the logic device. A more accurate approximation of an actual operating environment is thereby provided.