Patents by Inventor Sungmi Hwang

Sungmi Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FABRICATING THE SAME
    Publication number: 20130313629
    Abstract: A method of forming a semiconductor memory device includes stacking a plurality of alternating first insulating layers and first sacrificial layers on a substrate to form a first multilayer structure, forming a first hole through the first multilayer structure, forming a first semiconductor pattern in the first hole, stacking a plurality of alternating second insulating layers and second sacrificial layers on the first multilayer structure to form a second multilayer structure, forming a second hole through the second multilayer structure to be aligned with the first hole, forming a second semiconductor pattern in the second hole, forming a trench to expose sidewalls of the first and second insulating layers at a side of the first and second semiconductor patterns, removing at least some portions of the first and second sacrificial layers to form a plurality of recess regions, forming an information storage layer, and forming a conductive pattern.
    Type: Application
    Filed: March 14, 2013
    Publication date: November 28, 2013
    Inventors: Sunil Shim, Jaehoon Jang, Hansoo Kim, Sungmi Hwang, Wonseok Cho, Jinsoo Lim
  • Three-dimensional semiconductor memory device and a method of fabricating the same
    Patent number: 8409977
    Abstract: A method of forming a semiconductor memory device includes stacking a plurality of alternating first insulating layers and first sacrificial layers on a substrate to form a first multilayer structure, forming a first hole through the first multilayer structure, forming a first semiconductor pattern in the first hole, stacking a plurality of alternating second insulating layers and second sacrificial layers on the first multilayer structure to form a second multilayer structure, forming a second hole through the second multilayer structure to be aligned with the first hole, forming a second semiconductor pattern in the second hole, forming a trench to expose sidewalls of the first and second insulating layers at a side of the first and second semiconductor patterns, removing at least some portions of the first and second sacrificial layers to form a plurality of recess regions, forming an information storage layer along surfaces of the plurality of recess regions, and forming a conductive pattern within each r
    Type: Grant
    Filed: August 17, 2010
    Date of Patent: April 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sunil Shim, Jaehoon Jang, Hansoo Kim, Sungmi Hwang, Wonseok Cho, Jinsoo Lim
  • THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FABRICATING THE SAME
    Publication number: 20110065270
    Abstract: A method of forming a semiconductor memory device includes stacking a plurality of alternating first insulating layers and first sacrificial layers on a substrate to form a first multilayer structure, forming a first hole through the first multilayer structure, forming a first semiconductor pattern in the first hole, stacking a plurality of alternating second insulating layers and second sacrificial layers on the first multilayer structure to form a second multilayer structure, forming a second hole through the second multilayer structure to be aligned with the first hole, forming a second semiconductor pattern in the second hole, forming a trench to expose sidewalls of the first and second insulating layers at a side of the first and second semiconductor patterns, removing at least some portions of the first and second sacrificial layers to form a plurality of recess regions, forming an information storage layer along surfaces of the plurality of recess regions, and forming a conductive pattern within each r
    Type: Application
    Filed: August 17, 2010
    Publication date: March 17, 2011
    Inventors: Sunil Shim, Jaehoon Jang, Hansoo Kim, Sungmi Hwang, Wonseok Cho, Jinsoo Lim