Patents by Inventor Sungmi YOON
Sungmi YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11812607Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.Type: GrantFiled: March 3, 2022Date of Patent: November 7, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungmi Yoon, Donghyun Im, Jooyub Kim, Juhyung We, Namhoon Lee, Chunhyung Chung
-
Patent number: 11765885Abstract: A semiconductor device including a substrate including a recess; a gate insulation layer on a surface of the recess; a first gate pattern on the gate insulation layer and filling a lower portion of the recess; a second gate pattern on the first gate pattern in the recess and including a material having a work function different from a work function of the first gate pattern; a capping insulation pattern on the second gate pattern and filling an upper portion of the recess; a leakage blocking oxide layer on the gate insulation layer at an upper sidewall of the recess above an upper surface of the first gate pattern and contacting a sidewall of the capping insulation pattern; and impurity regions in the substrate and adjacent to the upper sidewall of the recess, each impurity region having a lower surface higher than the upper surface of the first gate pattern.Type: GrantFiled: March 24, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyewon Kim, Juhyung We, Sungmi Yoon, Donghyun Im, Sangwoon Lee, Taiuk Rim, Kyosuk Chae
-
Patent number: 11742401Abstract: A semiconductor device may include a substrate including a recess, a gate insulation layer on a surface of the recess, an impurity barrier layer on a surface of the gate insulation layer to cover the surface of the gate insulation layer, a first gate pattern on impurity barrier layer to fill a lower portion of the recess, a second gate pattern on the first gate pattern in the recess, a capping insulation pattern on the second gate pattern to fill the recess, and impurity regions at the substrate adjacent to an upper sidewall of the recess. The impurity barrier layer may have a concentration of nitrogen higher than a concentration of nitrogen included in the gate insulation layer. The second gate pattern may include a material different from a material of the first gate pattern. A lower surface of the impurity regions may be higher than an upper surface of the first gate pattern. Thus, the semiconductor device may have good characteristics.Type: GrantFiled: June 7, 2021Date of Patent: August 29, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sungmi Yoon, Jooyub Kim, Daehyun Kim, Juhyung We, Donghyun Im, Chunhyung Chung
-
Patent number: 11715666Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.Type: GrantFiled: January 13, 2022Date of Patent: August 1, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-Hyun Im, Kibum Lee, Daehyun Kim, Ju Hyung We, Sungmi Yoon
-
Publication number: 20220189963Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.Type: ApplicationFiled: March 3, 2022Publication date: June 16, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Sungmi YOON, Donghyun IM, Jooyub KIM, Juhyung WE, Namhoon LEE, Chunhyung CHUNG
-
Publication number: 20220181326Abstract: Disclosed is a semiconductor memory device comprising a substrate with active patterns including first and second source/drain regions, a gate electrode extending across the active patterns in a first direction between the first and second source/drain regions, a line structure extending across the active patterns in a second direction that is transverse to the first direction and including a bit line electrically connected to the first source/drain region, a device isolation layer within a first trench which defines the active patterns, and contacts coupled to the second source/drain regions. The active pattern includes a first portion extending in a third direction parallel to a top surface of the substrate, and second and third portions connected to opposite ends of the first portion and vertically overlapping respective contacts. The second and third portions extend toward the respective contacts.Type: ApplicationFiled: July 16, 2021Publication date: June 9, 2022Inventors: Hokyun An, Sungmi Yoon
-
Publication number: 20220181457Abstract: A semiconductor device may include a substrate including a recess, a gate insulation layer on a surface of the recess, an impurity barrier layer on a surface of the gate insulation layer to cover the surface of the gate insulation layer, a first gate pattern on impurity barrier layer to fill a lower portion of the recess, a second gate pattern on the first gate pattern in the recess, a capping insulation pattern on the second gate pattern to fill the recess, and impurity regions at the substrate adjacent to an upper sidewall of the recess. The impurity barrier layer may have a concentration of nitrogen higher than a concentration of nitrogen included in the gate insulation layer. The second gate pattern may include a material different from a material of the first gate pattern. A lower surface of the impurity regions may be higher than an upper surface of the first gate pattern. Thus, the semiconductor device may have good characteristics.Type: ApplicationFiled: June 7, 2021Publication date: June 9, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Sungmi YOON, Jooyub KIM, Daehyun KIM, Juhyung WE, Donghyun IM, Chunhyung CHUNG
-
Publication number: 20220165608Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.Type: ApplicationFiled: January 13, 2022Publication date: May 26, 2022Inventors: Dong-Hyun IM, Kibum LEE, Daehyun KIM, Ju Hyung WE, Sungmi YOON
-
Patent number: 11296089Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.Type: GrantFiled: April 16, 2020Date of Patent: April 5, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungmi Yoon, Donghyun Im, Jooyub Kim, Juhyung We, Namhoon Lee, Chunhyung Chung
-
Publication number: 20220037328Abstract: A semiconductor device including a substrate including a recess; a gate insulation layer on a surface of the recess; a first gate pattern on the gate insulation layer and filling a lower portion of the recess; a second gate pattern on the first gate pattern in the recess and including a material having a work function different from a work function of the first gate pattern; a capping insulation pattern on the second gate pattern and filling an upper portion of the recess; a leakage blocking oxide layer on the gate insulation layer at an upper sidewall of the recess above an upper surface of the first gate pattern and contacting a sidewall of the capping insulation pattern; and impurity regions in the substrate and adjacent to the upper sidewall of the recess, each impurity region having a lower surface higher than the upper surface of the first gate pattern.Type: ApplicationFiled: March 24, 2021Publication date: February 3, 2022Inventors: Hyewon KIM, Juhyung WE, Sungmi YOON, Donghyun IM, Sangwoon LEE, Taiuk RIM, Kyosuk CHAE
-
Patent number: 11232973Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.Type: GrantFiled: December 27, 2019Date of Patent: January 25, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-Hyun Im, Kibum Lee, Daehyun Kim, Ju Hyung We, Sungmi Yoon
-
Publication number: 20210091085Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.Type: ApplicationFiled: April 16, 2020Publication date: March 25, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Sungmi YOON, Donghyun IM, Jooyub KIM, Juhyung WE, Namhoon LEE, Chunhyung CHUNG
-
Publication number: 20200402839Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.Type: ApplicationFiled: December 27, 2019Publication date: December 24, 2020Inventors: Dong-Hyun IM, Kibum LEE, Daehyun KIM, Ju Hyung WE, Sungmi YOON
-
Patent number: 10707216Abstract: Provided is a method for manufacturing a semiconductor device including: patterning a substrate to form a plurality of active patterns including two adjacent active patterns having a first trench therebetween; forming a semiconductor layer on the plurality of active patterns to cover the plurality of active patterns; forming a device isolation layer on the semiconductor layer to cover the semiconductor layer for oxidization and fill the first trench; patterning the device isolation layer and the plurality of active patterns so that a second trench intersecting the first trench is formed and the two active patterns protrudes from the device isolation layer in the second trench; and forming a gate electrode in the second trench. Here, a first thickness of the semiconductor layer covering a top surface of each of the two active patterns is greater than a second thickness of the semiconductor layer covering a bottom of the first trench.Type: GrantFiled: June 29, 2018Date of Patent: July 7, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungmi Yoon, Chunhyung Chung
-
Publication number: 20190296025Abstract: Provided is a method for manufacturing a semiconductor device including: patterning a substrate to form a plurality of active patterns including two adjacent active patterns having a first trench therebetween; forming a semiconductor layer on the plurality of active patterns to cover the plurality of active patterns; forming a device isolation layer on the semiconductor layer to cover the semiconductor layer for oxidization and fill the first trench; patterning the device isolation layer and the plurality of active patterns so that a second trench intersecting the first trench is formed and the two active patterns protrudes from the device isolation layer in the second trench; and forming a gate electrode in the second trench. Here, a first thickness of the semiconductor layer covering a top surface of each of the two active patterns is greater than a second thickness of the semiconductor layer covering a bottom of the first trench.Type: ApplicationFiled: June 29, 2018Publication date: September 26, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungmi YOON, Chunhyung CHUNG