Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.

Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.