Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

Abstract: The present invention relates to a multisystem for simultaneously performing a biochemical examination and a blood test or an immunity test, the multisystem including a multi-disc in which a biochemical examination unit, a blood testing unit and an immunity test unit are divided and formed in a fan shape based on a rotation center. There is an effect that it is possible to perform all of a biochemical examination for measuring concentration values of biochemical components of serum to diagnose vital functions, a blood testing for separating blood samples to measure and test the number and deformation of red blood cells or white blood cells, and an immunity test for measuring an antigen-antibody reaction of serum to diagnose and test cancer or viruses in one device at the same time by using the multi-disc according to the present invention.

Abstract: A sub-frame mounting structure is provided. The sub-frame mounting structure includes an outer pipe that is mounted on a vehicle body and an inner pipe that is inserted into and coupled to the outer pipe and detached from the outer pipe when an impact load of a predetermined size or greater is transferred thereto. An anti-rotation structure prevents a relative rotation between the inner pipe and the outer pipe. A sub-frame is fastened to the inner pipe to support the vehicle body through the outer pipe to stably support the vehicle body by the sub-frame and to detach the sub-frame from the vehicle body during a collision.

Abstract: A multi-unit for performing a biochemical test and immunological response test and a test method using the same comprising an upper strip composed of a plurality of first strip wells including an indicator for the biochemical test; a lower strip composed of a plurality of second strip wells including DNA fragments or antibodies for the immunological response test; and plasma which reacts with the indicator, DNA fragments, or antibodies, and the strip enclosure composed of a plurality of third strip wells in which the upper strip and the lower strip are sequentially inserted and coupled. The bottom surface of the first strip well and the bottom surface of the second strip well are spaced apart from each other by a predetermined distance.

Abstract: A composition for pickling a welded portion and a rust-generated portion according to installation of pipes, structures, plants, and so on formed of stainless steel, and for forming a passive state film thereon is provided. More particularly, the present disclosure relates to a neutral agent for passivating a surface of stainless steel metal in which a neutral agent is obtained by neutralizing a basic aqueous solution to 6.9 pH to 7.1 pH and aerated with carbon dioxide-free air to increase the amount of dissolved oxygen, so that an oxidation reduction potential in a range of 170 mV to 310 mV is obtained.

Abstract: A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.

Abstract: A sub-frame mounting structure is provided. The sub-frame mounting structure includes an outer pipe that is mounted on a vehicle body and an inner pipe that is inserted into and coupled to the outer pipe and detached from the outer pipe when an impact load of a predetermined size or greater is transferred thereto. An anti-rotation structure prevents a relative rotation between the inner pipe and the outer pipe. A sub-frame is fastened to the inner pipe to support the vehicle body through the outer pipe to stably support the vehicle body by the sub-frame and to detach the sub-frame from the vehicle body during a collision.

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.

Abstract: A display apparatus and a display method are provided. The display apparatus includes a communicator configured to receive a pre-power on command signal from an external device, and a controller configured to activate a network communication function of the display apparatus based on the pre-power on command signal. The communicator is further configured to receive information of content from the external device, in response to the controller activating the network communication function, and the controller is further configured to reproduce the content based on the information of the content.

Abstract: A multi-unit for performing a biochemical test and immunological response test and a test method using the same comprising an upper strip composed of a plurality of first strip wells including an indicator for the biochemical test; a lower strip composed of a plurality of second strip wells including DNA fragments or antibodies for the immunological response test; and plasma which reacts with the indicator, DNA fragments, or antibodies, and the strip enclosure composed of a plurality of third strip wells in which the upper strip and the lower strip are sequentially inserted and coupled. The bottom surface of the first strip well and the bottom surface of the second strip well are spaced apart from each other by a predetermined distance.

Abstract: A composition for pickling a welded portion and a rust-generated portion according to installation of pipes, structures, plants, and so on formed of stainless steel, and for forming a passive state film thereon is provided. More particularly, the present disclosure relates to a neutral agent for passivating a surface of stainless steel metal in which a neutral agent is obtained by neutralizing a basic aqueous solution to 6.9 pH to 7.1 pH and aerated with carbon dioxide-free air to increase the amount of dissolved oxygen, so that an oxidation reduction potential in a range of 170 mV to 310 mV is obtained.

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.

Abstract: Provided are channel display apparatuses and methods of operating the channel display apparatuses. The channel display apparatus includes a communicator that communicates with a network for sharing a plurality of real-time channel thumbnails; and a processor that controls the communicator to acquire at least one real-time channel thumbnail from among the plurality of real-time channel thumbnails and controls the communicator to transmit the acquired at least one real-time channel thumbnail to the network.

Abstract: A chip-on-film (COF) package includes a base film, a semiconductor chip mounted on a chip mounting region of a top surface of the base film, a plurality of top inner output conductive patterns, a plurality of bottom inner output conductive patterns and a plurality of landing vias. The top inner output conductive patterns are formed on the top surface of the base film and respectively connected to chip inner output pads formed on a bottom surface of the semiconductor chip. The bottom inner output conductive patterns are formed on a bottom surface of the base film. The landing vias are formed to vertically penetrate the base film and to respectively connect the top inner output conductive patterns and the bottom inner output conductive patterns. The landing vias are arranged within the chip mounting region to form a two-dimensional shape.

Abstract: A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.

Abstract: The apparatus for diagnosing malfunction of a high voltage relay includes: first and second relays configured to connect or disconnect a battery and a circuit using the battery as a power source in each electrode; a voltage measuring unit configured to measure a first voltage between a battery side terminal or a circuit side terminal, among terminals of the first relay, and a circuit side terminal or a battery side terminal, among terminals of the second relay, and measure a second voltage between the battery side terminals or between the circuit side terminals; and a controller configured to determine whether the first or second relay malfunctions based on the first and second voltage values measured by the voltage measuring unit by controlling connection and disconnection of the first or second relay.

Abstract: A reverse battery protection device and an operating method thereof are provided. The reverse battery protection device includes a signal generating unit measuring a voltage of a battery, and, when the measured voltage is not smaller than a reference voltage, generating an electrical signal, a signal converting unit converting the generated electrical signal into a DC voltage, and a switch unit switching to allow a current to flow between the battery and a converter, when the converted DC voltage is received.