Abstract: A display device includes: a substrate; a transistor on the substrate; an interlayer insulating layer on the transistor; a first electrode disposed on the interlayer insulating layer and connected to the transistor through a contact hole in the interlayer insulating layer; a pixel defining layer disposed on the interlayer insulating layer and the first electrode; a sacrificial layer disposed in a groove of the interlayer insulating layer; a gap fill layer disposed on the sacrificial layer, between a first sub-pixel defining layer and a second sub-pixel defining layer included in the pixel defining layer; a light emitting stack on the first electrode and the pixel defining layer; and a first trench formed between the first sub-pixel defining layer and the gap fill layer, between an inner wall of the groove and the gap fill layer, and between the inner wall of the groove and the sacrificial layer.

Abstract: A measurement pad includes a pattern part including a plurality of groove portions arranged at pitch intervals corresponding to pitch intervals of a plurality of head nozzles, and a wall portion formed between the groove portions, a first electrode part extending in the longitudinal direction of the groove portions at the center of the groove portions, a second electrode part spaced apart from the first electrode part in the width direction and extending in the longitudinal direction of the groove portions. The length of the groove portions is formed to have a size that can include all heads existing on the same extension line which are measurement targets, and is uniformly formed in the same cross-sectional shape throughout the longitudinal direction of the groove portions.

Abstract: A method of a terminal may include: receiving, from a base station, a first SSB having an SSB candidate #n at a first frequency position during a first time period; receiving, from the base station, first mapping relationship information between SSB candidate indexes and SSB indexes; identifying an SSB #k mapped to the SSB candidate #n based on the first mapping relationship information for the first frequency position; acquiring time synchronization with respect to the base station based on the SSB candidate #n; and obtaining beam information for the first frequency position based on the SSB #k, wherein each of n and k is an integer equal to or greater than 0.

Abstract: A method for reporting sidelink HARQ response information, performed by a terminal, includes the steps of: receiving, from a base station, information on allocation of a PSSCH resource for PSSCH transmission; determining a PSFCH resource for PSFCH reception corresponding to the PSSCH transmission; determining a transmission time point of HARQ response information corresponding to the PSSCH transmission; and transmitting the HARQ response information, corresponding to the PSSCH transmission, to the base station at the determined time point, wherein the transmission time point of the HARQ response information is expressed as a time offset, L, from a time point of the PSFCH resource, and information on the transmission time point of the HARQ response information is transmitted from the base station to the terminal.

Abstract: A method of a terminal may include: receiving, from a base station, at least one SSB belonging to a first layer; receiving, from the base station, at least one SSB belonging to a second layer; determining valid SSB(s) from among the at least one SSB belonging to the first layer and the at least one SSB belonging to the second layer; selecting at least one first SSB belonging to a layer having a higher priority among the first layer and the second layer from among the valid SSB(s); and reporting the selected first SSB to the base station, and using a beam used for receiving the first SSB to perform an initial access procedure for communications with the base station, wherein each SSB includes at least one of a synchronization signal or a broadcast channel.

Abstract: Disclosed are methods and apparatuses for transmitting and receiving data channels in a communication system. An operation method of a terminal in a communication system may comprise receiving, from a base station, resource allocation information of a plurality of physical uplink shared channels (PUSCHs) used for repetitive transmission of a same transport block (TB); identifying a position of each of the plurality of PUSCHs in a time domain based on the resource allocation information; and repeatedly transmitting the same TB to the base station at the position of each of the plurality of PUSCHs. Therefore, performance of the communication system can be improved.

Abstract: A cathode active material for a lithium secondary battery includes a coating element and lithium-nickel metal oxide particles. A coating area defined as (AC/ANi)*100 1 is 25% or more. AC is an area of a region where a content of the coating element is 1.6 wt % or more based on a total weight of the lithium-nickel metal oxide particles in a quantitative map (Q-map) image obtained through a scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDS), and ANi is an area of a region where nickel is present in the Q-map image obtained through the SEM-EDS.

Abstract: An operation method of a terminal in a communication system may include: selecting one or more control elements among a plurality of control elements included first UCI in consideration of a size of an uplink resource; generating multiplexed UCIs by multiplexing second UCI with the one or more control elements; and transmitting the multiplexed UCIs to a base station by using the uplink resource.

Abstract: An operation method of a terminal in a communication system may comprise: receiving, from a base station, a first SSB; determining a RACH occasion associated with the first SSB; transmitting, to the base station, a PRACH preamble in the RACH occasion within a first radio resource to which a first SCS is applied; determining a slot to which the RACH occasion belongs based on a reference radio resource to which a reference SCS is applied instead of the first SCS; determining an RNTI for a random access procedure based on a slot index for the slot; and performing a reception operation of a response for the PRACH preamble by using the RNTI in the first radio resource.

Abstract: A coil component includes: a body; a support substrate disposed in the body; a coil portion including coil patterns, lead patterns, and extension patterns, while disposed on the support substrate, the lead patterns being exposed to the body, and the extension patterns connecting the coil patterns and the lead patterns; and external electrodes disposed on the body and contacting the lead patterns, wherein the lead pattern has an inner portion adjacent to the extension pattern, an outer portion adjacent to the external electrode, and a middle portion disposed between the inner portion and the outer portion, and a width of the middle portion is larger than a width of the inner portion and smaller than a width of the outer portion.

Abstract: Disclosed are various methods for transmitting or receiving data or control information having high reliability conditions. A method for operating a terminal which transmits uplink control information (UCI) includes: a step of generating UCI; a step of comparing the priority of an uplink (UL) control channel for the transmission of the UCI with the priority of a UL data channel when some symbols of the UL control channel and the UL data channel overlap; and a step of selecting the UL channel having a higher priority among the UL control channel and the UL data channel, and transmitting the UCI to a base station through the selected UL channel.

Abstract: Disclosed are a method and an apparatus for transmitting or receiving uplink feedback information in a communication system. An operation method of a terminal may comprise receiving downlink control information (DCI) from a base station, the DCI including resource allocation information of a physical downlink shared channel (PDSCH); receiving data #n from the base station through the PDSCH indicated by the DCI; generating a hybrid automatic repeat request (HARQ) codebook including an HARQ response bit #n for the data #n and an HARQ response bit #n?1 for data #n?1 received from the base station before the data #n; and transmitting the HARQ codebook to the base station. Therefore, the performance of the communication system can be improved.

Abstract: An operation method of an IAB node in a communication system may comprise: measuring a power difference between a first signal received from a first node and a second signal received from a second node; controlling a transmit power of each of the first node and the second node based on the power difference; generating scheduling information for allowing the first node and the second node to simultaneously transmit signals; transmitting the scheduling information to the first node and the second node; and receiving signals that the first node and the second node simultaneously transmit according to the scheduling information by using the transmit power.

Abstract: An operation method of a terminal in a communication system may comprise: receiving one or more data units from a base station; generating a HARQ codebook for at least one dada unit of the one or more data units at a reference time; and transmitting the HARQ codebook to the base station, wherein the reference time is shared by the terminal and the base station.

Abstract: A method of a terminal may comprise: receiving on-demand synchronization signal block (SSB) transmission configuration information from a first base station to which the terminal is connected; and receiving an on-demand SSB from a second base station based on the on-demand SSB transmission configuration information, wherein the on-demand SSB transmission configuration information includes at least one of capability information of the second base station, on-demand SSB resource information, a number of on-demand SSB transmissions, on-demand SSB transmission indication, or channel state information (CSI) configuration information.

Abstract: The cathode active material according to embodiments of the present invention includes a lithium composite oxide particle having a form of secondary particle in which a plurality of primary particle are aggregated, wherein the primary particles respectively include a lithium conduction pathway through which lithium ions are diffused. Wherein the primary particles include a first particle, and the first particle has an angle of 45° to 90° formed by a direction from a center of the first particle to a center of the lithium composite oxide particle and a direction of the lithium conduction pathway included in the first particle, wherein a ratio of the number of the first particles among the primary particles located on a surface of the lithium composite oxide particle is 20% or more.

Abstract: A memory device includes first and second material layers alternately stacked; a vertical hole passing through the first and second material layers; first insulating patterns protruding from a side surface of the first material layers exposed through the vertical hole; a blocking layer formed along a surface of the second material layers exposed between the first insulating patterns, the blocking layer comprising a plurality of concave portions, each of which is between the first insulating patterns; and charge trap patterns formed in the concave portions, wherein portions of the blocking layer exposed between the charge trap patterns, wherein a tunnel insulating layer, a channel layer, and a core pillar, are formed in an area that is substantially surrounded by the charge trap patterns.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.