Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A memory device includes first and second material layers alternately stacked; a vertical hole passing through the first and second material layers; first insulating patterns protruding from a side surface of the first material layers exposed through the vertical hole; a blocking layer formed along a surface of the second material layers exposed between the first insulating patterns, the blocking layer comprising a plurality of concave portions, each of which is between the first insulating patterns; and charge trap patterns formed in the concave portions, wherein portions of the blocking layer exposed between the charge trap patterns, wherein a tunnel insulating layer, a channel layer, and a core pillar, are formed in an area that is substantially surrounded by the charge trap patterns.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: There is provided a method of preparing a photoelectrochemical and electrochemical electrode catalyst, the method including preparing a metal oxide-based electrode, introducing a phosphate layer on a surface of the metal oxide-based electrode; and converting the phosphate layer into an oxyhydroxide layer by performing electrochemical activation on the phosphate layer. The efficiency of selective oxidation reaction of ammonia in wastewater may be improved.

Abstract: The present invention relates to a binding molecule that binds to SARS-coronavirus-2 (SARS-CoV-2). More particularly, the binding molecule of the present invention has strong ability to bind to a spike protein (S protein) on the surface of SARS-coronavirus-2 and high neutralizing activity against SARS-coronavirus-2 and is thus very useful in the diagnosis, prevention or treatment of SARS-coronavirus infection (COVID-19).

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: When a three-dimensional image of a specific subject is acquired by means of an infrared camera and an external light (for example, external light such as sunlight at the time of outdoor photography) having a relatively large intensity exists, it is difficult to acquire the image. To this end, the present invention proposes an electronic device for reducing a current peak by adaptively changing optical power and an exposure time of an infrared camera according to the intensity of external light.

Abstract: The technology relates to a semiconductor device and a method for manufacturing the semiconductor device. According to the technology, a method for manufacturing a semiconductor device may comprise forming a gapfill target structure on a semiconductor substrate, the gapfill target structure including a horizontal recess parallel with the semiconductor substrate and having a first surface and a vertical slit extending from the horizontal recess and having a second surface perpendicular to the semiconductor substrate, removing a native oxide from the first surface to form a pre-cleaned first surface, forming, in-situ, a first semiconductor material on the pre-cleaned first surface and forming a second semiconductor material on the first semiconductor material.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method of calculating depth information for a three-dimensional (3D) image includes generating a pattern based on the value of at least one cell included in a two-dimensional (2D) image, projecting the pattern, capturing a reflected image of the pattern, and calculating depth information based on the reflected image of the pattern.

Abstract: When a three-dimensional image of a specific subject is acquired by means of an infrared camera and an external light (for example, external light such as sunlight at the time of outdoor photography) having a relatively large intensity exists, it is difficult to acquire the image. To this end, the present invention proposes an electronic device for reducing a current peak by adaptively changing optical power and an exposure time of an infrared camera according to the intensity of external light.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: A method of calculating depth information for a three-dimensional (3D) image includes generating a pattern based on the value of at least one cell included in a two-dimensional (2D) image, projecting the pattern, capturing a reflected image of the pattern, and calculating depth information based on the reflected image of the pattern.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.