Abstract: A system and method of generating a control message of a digital unit (DU) of a base station in a wireless communication system supporting lower layer function division, and a system and method of processing a control message of a radio unit (RU) of the base station are provided. The system and method provide an RU of the base station that does not need to analyze the subframe structure in association with other control plane sections, such that processing time and processing complexity can be reduced.

Abstract: The disclosure relates to a pre 5th generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th generation (4G) communication system such as long term evolution (LTE). A method for operating a radio unit (RU) of a base station is provided. The method includes transmitting, to a digital unit (DU), a first message comprising a value indicating the maximum number of masks for one resource area, and receiving, from the DU, a second message generated based on the value, wherein the mask may indicate resources to which the same beam is applied within the resource area.

Abstract: In a method of manufacturing a semiconductor device, a first selective epitaxial growth (SEG) process is performed on a substrate to form a first channel. A first etching process is performed to form a first recess through the first channel and an upper portion of the substrate. A sidewall of the first channel exposed by the first recess is slanted with respect to an upper surface of the substrate. A second SEG process is performed to form a second channel on a surface of the substrate and the sidewall of the first channel exposed by the first recess. A gate structure is formed to fill the first recess. An impurity region is formed at an upper portion of the substrate adjacent to the gate structure.

Abstract: The present invention relates to a harmonic circuit for improving linearity, the harmonic circuit according to the present invention comprises a first terminal connected to a collector of a NPN transistor and a second terminal connected to an emitter of the NPN transistor, and removes inter-modulation noise from the signal appeared at the collector of the NPN transistor. The harmonic circuit includes a PNP transistor, a first resistor, and a second resistor. The PNP transistor generates harmonic components without affecting the main signal, and the harmonic components that are generated by the PNP transistor compensate the harmonic components that are generated by the NPN transistor by having load of different sign from the load of the harmonic components that are generated by the NPN transistor.