Patents by Inventor Sungwon Ha

Sungwon Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220384161
    Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 1, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Ruiyun Huang, Abdul Aziz Khaja, Amit Bansal, Dong Hyung Lee, Ganesh Balasubramanian, Tuan Anh Nguyen, Sungwon Ha, Anjana M. Patel, Ratsamee Limdulpaiboon, Karthik Janakiraman, Kwangduk Douglas Lee
  • Patent number: 11515129
    Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Elizabeth Neville, Satish Radhakrishnan, Kartik Shah, Vinay Prabhakar, Venkata Sharat Chandra Parimi, Sungwon Ha
  • Publication number: 20220130650
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Venkata Sharat Chandra Parimi, Sungwon Ha, Kwangduk Douglas Lee
  • Publication number: 20220122823
    Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Fei Wu, Abdul Aziz Khaja, Sungwon Ha, Ganesh Balasubramanian, Vinay Prabhakar
  • Patent number: 11276562
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
  • Publication number: 20220020612
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The processing systems may include a faceplate heater seated on the faceplate. The faceplate heater may include a first heater coil extending proximate a first area of the faceplate. The faceplate heater may include a second heater coil extending proximate a second area of the faceplate.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Sungwon Ha, Runyun Pan
  • Publication number: 20210202218
    Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 1, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Xiaoquan Min, Sarah Michelle Bobek, Sungwon Ha, Prashant Kumar Kulshreshtha, Vinay Prabhakar
  • Publication number: 20210166921
    Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
    Type: Application
    Filed: December 3, 2019
    Publication date: June 3, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Elizabeth Neville, Satish Radhakrishnan, Kartik Shah, Vinay Prabhakar, Venkata Sharat Chandra Parimi, Sungwon Ha
  • Publication number: 20210043455
    Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.
    Type: Application
    Filed: March 21, 2019
    Publication date: February 11, 2021
    Inventors: Byung Seok KWON, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Bushra AFZAL, Sungwon HA, Vinay K. PRABHAKAR, Viren KALSEKAR, Satya Teja Babu THOKACHICHU, Edward P. HAMMOND, IV
  • Publication number: 20200365370
    Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.
    Type: Application
    Filed: April 23, 2020
    Publication date: November 19, 2020
    Inventors: Fei WU, Abdul Aziz KHAJA, Sungwon HA, Vinay K. PRABHAKAR, Ganesh BALASUBRAMANIAN
  • Publication number: 20200224310
    Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
    Type: Application
    Filed: December 16, 2019
    Publication date: July 16, 2020
    Inventors: Sarah Michelle BOBEK, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR, Kwangduk Douglas LEE, Sungwon HA, Jian LI
  • Publication number: 20200203132
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Application
    Filed: March 2, 2020
    Publication date: June 25, 2020
    Inventors: Zheng John YE, Ganesh BALASUBRAMANIAN, Thuy BRITCHER, Jay D. PINSON, II, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Kwangduk Douglas LEE, Martin Jay SEAMONS, Bok Hoen KIM, Sungwon HA
  • Patent number: 10580623
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: March 3, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
  • Patent number: 10403535
    Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: September 3, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zheng John Ye, Jay D. Pinson, II, Hiroji Hanawa, Jianhua Zhou, Xing Lin, Ren-Guan Duan, Kwangduk Douglas Lee, Bok Hoen Kim, Swayambhu P. Behera, Sungwon Ha, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Prashant Kumar Kulshreshtha, Jason K. Foster, Mukund Srinivasan, Uwe P. Haller, Hari K. Ponnekanti
  • Patent number: 10100408
    Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: October 16, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sungwon Ha, Kwangduk Douglas Lee, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Martin Jay Seamons, Ziqing Duan, Zheng John Ye, Bok Hoen Kim, Lei Jing, Ngoc Le, Ndanka Mukuti
  • Publication number: 20170178758
    Abstract: The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.
    Type: Application
    Filed: December 5, 2016
    Publication date: June 22, 2017
    Inventors: Sungwon HA, Paul CONNORS, Jianhua ZHOU, Juan Carlos ROCHA-ALVAREZ, Kwangduk Douglas LEE, Ziqing DUAN, Nicolas J. BRIGHT, Feng BI
  • Publication number: 20160049323
    Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
    Type: Application
    Filed: August 12, 2015
    Publication date: February 18, 2016
    Inventors: Zheng John YE, Jay D. PINSON, II, Hiroji HANAWA, Jianhua ZHOU, Xing LIN, Ren-Guan DUAN, Kwangduk Douglas LEE, Bok Hoen KIM, Swayambhu P. BEHERA, Sungwon HA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA- ALVAREZ, Prashant Kumar KULSHRESHTHA, Jason K. FOSTER, Mukund SRINIVASAN, Uwe P. HALLER, Hari K. PONNEKANTI
  • Publication number: 20150247237
    Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.
    Type: Application
    Filed: January 12, 2015
    Publication date: September 3, 2015
    Inventors: Sungwon HA, Kwangduk Douglas LEE, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Martin Jay SEAMONS, Ziqing DUAN, Zheng John YE, Bok Hoen KIM, Lei JING, Ngoc LE, Ndanka MUKUTI
  • Publication number: 20150136325
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 21, 2015
    Inventors: Zheng John YE, Ganesh BALASUBRAMANIAN, Thuy BRICHER, Jay D. PINSON, II, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Kwangduk Douglas LEE, Martin Jay SEAMONS, Bok Hoen KIM, Sungwon HA
  • Patent number: 7145913
    Abstract: In the present scalable system routing method, received packets are associating with threads for processing the received packets. While a previously received packet is being processed, arrival of an interrupt is checked. If there is an interrupt, a thread is created associating the interrupt is created. Then, a determination of whether the thread associated with the interrupt has a priority that is higher than the priority of a thread associated with the previously received packet is made. If the thread associated with the interrupt has a higher priority than the previously received packet, the thread associated with the previously received packet is saved in a Shared Arena storage area. However, if the thread associated with the interrupt does not have a higher priority than the previously received packet, the thread associated with the interrupt is queued.
    Type: Grant
    Filed: February 13, 2002
    Date of Patent: December 5, 2006
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: David Craig, Hwangnam Kim, Sungwon Ha, Sung-wook Han, Constantine Polychronopoulos