Patents by Inventor SUNG WOO JO

SUNG WOO JO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9183938
    Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.
    Type: Grant
    Filed: April 13, 2015
    Date of Patent: November 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Jung, Hee Tak Shin, Jinwoo Jung, Sung Woo Jo
  • Publication number: 20150221382
    Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.
    Type: Application
    Filed: April 13, 2015
    Publication date: August 6, 2015
    Inventors: YOUNG WOO JUNG, HEE TAK SHIN, JINWOO JUNG, SUNG WOO JO
  • Patent number: 9007827
    Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: April 14, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Jung, Hee Tak Shin, Jinwoo Jung, Sung Woo Jo
  • Publication number: 20140119115
    Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.
    Type: Application
    Filed: October 25, 2013
    Publication date: May 1, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: YOUNG WOO JUNG, HEE TAK SHIN, JINWOO JUNG, SUNG WOO JO