Abstract: A display device including a display area configured to display an image, a first non-display area disposed adjacent to the display area, a second non-display area disposed adjacent to the first non-display area, and a first driving voltage line disposed in the first non-display area and the second non-display area, the first driving voltage line being configured to be applied with a first driving voltage and includes a first sub-driving voltage line including first holes, and a second sub-driving voltage line disposed on the first sub-driving voltage line and including second holes, in which the second holes include first sub-holes and second sub-holes having a different size than the first sub-holes.

Abstract: A display device includes a substrate, a pixel structure, a lighting circuit part, a driving integrated circuit part, a first lighting wire, a second lighting wire, and a connection electrode. The substrate includes a display area and a pad area. The pixel structure is on the substrate in the display area to emit light. The lighting circuit part is on the substrate in the pad area, and is electrically coupled to the pixel structure. The first lighting wire is spaced apart from a first side of the driving integrated circuit part in a first direction, and is coupled to the lighting circuit part. The second lighting wire is spaced apart from a second side facing the first side of the driving integrated circuit part in a second direction opposite to the first direction. The connection electrode electrically couples the first lighting wire and the second lighting wire to each other.

Abstract: A display device including a display area configured to display an image, a first non-display area disposed adjacent to the display area, a second non-display area disposed adjacent to the first non-display area, and a first driving voltage line disposed in the first non-display area and the second non-display area, the first driving voltage line being configured to be applied with a first driving voltage and includes a first sub-driving voltage line including first holes, and a second sub-driving voltage line disposed on the first sub-driving voltage line and including second holes, in which the second holes include first sub-holes and second sub-holes having a different size than the first sub-holes.

Abstract: A display device includes a substrate, a pixel structure, a lighting circuit part, a driving integrated circuit part, a first lighting wire, a second lighting wire, and a connection electrode. The substrate includes a display area and a pad area. The pixel structure is on the substrate in the display area to emit light. The lighting circuit part is on the substrate in the pad area, and is electrically coupled to the pixel structure. The first lighting wire is spaced apart from a first side of the driving integrated circuit part in a first direction, and is coupled to the lighting circuit part. The second lighting wire is spaced apart from a second side facing the first side of the driving integrated circuit part in a second direction opposite to the first direction. The connection electrode electrically couples the first lighting wire and the second lighting wire to each other.

Abstract: An embodiment provides a method of predicting a thickness of an oxide layer of a silicon wafer including: aging a heat treatment furnace (furnace); measuring a thickness of each of the oxide layers after disposing a plurality of reference wafers in slots of a heat treatment boat in the furnace and forming oxide layers; and measuring a thickness of each of the oxide layers after disposing the plurality of reference wafers and test wafers in the slots of the heat treatment boat in the furnace and forming oxide layers.

Abstract: An embodiment provides a method of predicting a thickness of an oxide layer of a silicon wafer including: aging a heat treatment furnace (furnace); measuring a thickness of each of the oxide layers after disposing a plurality of reference wafers in slots of a heat treatment boat in the furnace and forming oxide layers; and measuring a thickness of each of the oxide layers after disposing the plurality of reference wafers and test wafers in the slots of the heat treatment boat in the furnace and forming oxide layers.

Abstract: A clamp configured to clamp an end of a unit mask supported while a tensile force is applied to the unit mask includes a clamp main body, and a rotation contact portion rotatably supported by the clamp main body and directly contacting the end of the unit mask.

Abstract: A method for manufacturing a metal mask includes defining pattern areas exposing an upper surface, and a lower surface opposite to the upper surface, of a thin plate; and etching the upper and lower surfaces of the thin film plate exposed by the pattern areas, to reduce a thickness of the thin film plate by a predetermined thickness and form deposition openings in the metal mask. The etching the upper and lower surfaces of the thin film plate includes both a wet-etching method and a dry-etching method.

Abstract: A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.

Abstract: A clamp configured to clamp an end of a unit mask supported while a tensile force is applied to the unit mask includes a clamp main body, and a rotation contact portion rotatably supported by the clamp main body and directly contacting the end of the unit mask.

Abstract: A display panel having a non-display region and having a display region that includes a plurality of pixel regions, each of the pixel regions including a thin film transistor, the display panel including: an array substrate including the display region, the non-display region, a first base substrate including a gate line, a data line and a thin film transistor, an insulating layer covering the first base substrate, and a pixel electrode on the insulating layer; an opposite substrate over the array substrate; a light blocking pattern on the array substrate, the light blocking pattern surrounding the display region and intersecting the gate line and the data line; and an encapsulating element on the light blocking pattern, the encapsulating element bonding and sealing the array substrate and the opposite substrate, wherein: the thin film transistor is coupled to the gate line and the data line, the insulating layer has a contact hole exposing a drain electrode of the thin film transistor, and the pixel electrod

Abstract: A display device includes a gate line, a switching device, a first electrode, an organic light emitting structure and a second electrode. The gate line may include a first conductive layer pattern and a second conductive layer pattern. The first conductive layer pattern may extend along a first direction and the second conductive layer pattern may extend along a second direction. The switching device may be connected to the gate line. The first electrode may be electrically connected to the switching device. The organic light emitting structure may be disposed on the first electrode. The second electrode may be disposed on the organic light emitting structure.

Abstract: A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: There is provided a method for automatically correcting a document image whose direction is incorrect, using character recognition. The method includes the steps of detecting a predetermined portion of a character area in the document image, determining the inclination of the document according to the character recognition reliability of the predetermined portion, and recognizing a character by rotating the document at the determined inclination. A large quantity of documents can be automatically processed and even the visually impaired can scan documents by using the automatic direction correcting feature of the document recognizer.