Abstract: The present disclosure relates to a photoelectrochemical photoelectrode for water splitting, which includes a plate-type photoelectrode including a transparent electrode substrate and a photoanode layer disposed on the transparent electrode substrate, wherein the plate-type photoelectrode exists in a plural number, and the plural plate-type photoelectrodes are disposed in such a manner that the transparent electrode substrate of one photoelectrode may face the photoanode layer of the other photoelectrode, while being spaced apart from each other. In this manner, it is possible to scale-up the photoelectrochemical photoelectrode for water splitting, while providing improved water splitting performance.

Abstract: A fabricating method of a nonvolatile memory device is disclosed. A disclosed method comprises: implanting ions into an active region of a semiconductor substrate to form a well of a low voltage transistor and adjust its threshold voltage; implanting ions into an active region of the semiconductor substrate to form a well of a high voltage transistor and adjust its threshold voltage, thereby forming a conductive region; depositing an ONO layer on the semiconductor substrate; patterning and etching the ONO layer to form an ONO structure; and forming a gate oxide layer on the semiconductor substrate.

Abstract: Non-volatile SRAMs having an improved recall characteristic are disclosed. An illustrated non-volatile SRAM includes a plurality of unit memory cells arranged in an array. Each of the plurality of unit memory cells comprises a SRAM unit and a non-volatile circuit. The non-volatile circuit includes storage transistors, SONOS transistors connected to the storage transistors, and recall transistors connected to the SONOS transistors. The thickness of the gate insulation films of the recall transistors is thinner than the thickness of the gate insulation films of the storage transistors.

Abstract: Disclosed is a thin film transistor formed on a substrate, comprising a patterned gate electrode formed on said substrate; a channel layer formed around said gate electrode with a gate insulating layer interposed therebetween; a interlayer insulating layer formed on said channel layer; and source and drain electrodes formed on both side walls of said channel layer and on both side portions of said interlayer insulating layer, and isolated from each other. Each of the channel and source/drain layers is composed of polysilicon with impurity ions. In the thin film transistor, because each of the source and drain electrodes is formed relatively thicker than the channel layer, them can be significantly reduced in resistance.