Abstract: A shape profile measurement device includes a light source emitting an optical pulse stream, a relay optical system configured to receive the optical pulse stream, generate an electrical pulse stream from a first portion of the optical pulse stream, generate a chromatically dispersed light over a plurality of wavelengths from a second portion of the optical pulse stream, provide the chromatically dispersed light to a measurement target, and output a reflected optical pulse stream reflected from the measurement target, a detector configured to receive the electrical pulse stream and the reflected optical pulse stream and detect a phase difference between the electrical pulse stream and the reflected optical pulse stream, and a processor configured to generate a shape profile of the measurement target using the phase difference.

Abstract: A shape profile measurement device includes a light source configured to generate and emit a light signal, a relay optical system configured to receive the light signal from the light source, perform axial chromatic aberration on the light signal, emit a chromatically dispersed light signal over a plurality of wavelengths to a measurement target, and output a reflected light signal reflected from the measurement target, wherein the chromatically dispersed light signal is focused at different positions along an optical axis of the light signal, a detector configured to detect a wavelength of the reflected light signal, among the plurality of wavelengths, received from the relay optical system; and a processor configured to calculate a shape profile of the measurement target based on a focal position of the wavelength of the reflected light signal.

Abstract: A wafer inspection apparatus includes: a stage configured such that a wafer is arranged on the stage; an optical apparatus configured to align the wafer on the stage and generate an optical intensity image including an optical intensity profile; a focus adjusting unit configured to align light incident onto the wafer to be in-focus; and an image processor configured to integrate the optical intensity image with vertical level data of the in-focus to generate and analyze a three-dimensional (3D) image.

Abstract: Provided is a light detection and ranging (LiDAR)-based inspection device including an ultrafast pulse source configured to generate a first ultrafast pulse and a second ultrafast pulse each having a pulse width ranging from 1 fs to 100 fs, a stage configured to generate a gating signal by adjusting a distance of flight of the first ultrafast pulse, a dispersing device configured to generate a chirp signal, based on the second ultrafast pulse reflected from a specimen, the chirp signal including a plurality of pulses having different wavelengths, a nonlinear optical generator configured to generate a nonlinear optical signal based on the chirp signal and the gating signal, and a detector configured to detect the nonlinear optical signal, wherein the gating signal temporally overlaps with some of the plurality of pulses included in the chirp signal in the nonlinear optical generator.

Abstract: Provided is a wafer inspection method including obtaining spectrum data for a wafer, sampling the spectrum data to obtain a first measurement position on the wafer, measuring a characteristic value of the wafer at the first measurement position, and generating a prediction model, using the spectrum data and the characteristic value at the first measurement position.

Abstract: A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Abstract: A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

Abstract: Provided is an X-ray photoelectron spectroscopy (XPS) apparatus including a filament configured to emit an electron beam, an anode including metal patterns, an anode actuator configured to move the anode, a stage configured to support an object and a test pad, a capillary configured to emit multicolored X-rays, generated by collision of the electron beam with the anode, onto the object or the test pad, and a detector configured to detect photoelectrons emitted from the object or the test pad emitted by the multicolored X-rays.

Abstract: A measuring system measures an overall resistance of two or more films on a substrate/measurement object by a terahertz absorption measurement and an overall film thickness by a photoacoustic measurement. The system estimates a first film thickness based on the overall resistance, then subtracts this estimated thickness from the overall film thickness measured by the photoacoustic measurement. The system includes a source unit to output a laser beam. A first pump-probe unit receives the laser beam and performs a photoacoustic test on the measurement object. A second pump-probe unit receives the laser beam and performs a terahertz signal test on the measurement object.

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Abstract: A defect detection method includes radiating light onto a substrate, obtaining a spectrum image, performing an electrical die sorting (EDS) test on the substrate, inspecting defects of each of a plurality of blocks of the substrate based on a result of the EDS test, generating a defect map, generating spectrum image information by matching the spectrum image with the defect map, training a defect detection model by using the defect grade as an output value and the spectrum image information as an input value, obtaining a target spectrum image with respect to a target substrate, extracting a feature vector from the target spectrum image by using the defect detection model, and detecting a target defect grade of the target spectrum image based on the feature vector, and generating a target defect map based on the target defect grade.

Abstract: A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Abstract: Provided is a through-focus image-based metrology device including an optical device, and a computing device configured to acquire at least one through-focus image of a target from the optical device, generate an intensity profile based on the acquired at least one through-focus image, and perform metrology on the target based on the generated intensity profile, wherein the optical device includes a stage on which the target is disposed, the stage being configured to move by one step in at least one direction based on control of the computing device, and to acquire the at least one through-focus image, an image sensor disposed on the stage, an objective lens disposed between the image sensor and the stage, the objective lens being configured to transmit reflected light from the target, and a light source configured to emit illumination light to the target through the objective lens.

Abstract: An inspection system includes a main support die configured to receive a target specimen; an auxiliary support die adjacent to the main support die and configured to receive a reference specimen; a cleaning device configured to remove contaminants from the reference specimen; an objective lens unit configured to direct light to main support die from a light source adjacent to the objective lens unit; a spectroscope between the objective lens unit and the light source; a detector adjacent to the objective lens unit; an imaging device between the objective lens unit and the detector; and a computer system in communication with the detector.

Abstract: An inspection method is provided. The inspection method includes inspecting a plurality of first observation sites by detecting ultrasonic signals emitted from the plurality of first observation sites, inspecting a plurality of second observation sites by detecting ultrasonic signals emitted from the plurality of second observation sites; and inspecting a target structure by detecting an ultrasonic signal emitted from the target structure, where the target structure includes a structure of interest, and wherein the plurality of first observation sites are intermediate results of forming the target structure, respectively, and the plurality of second observation sites are structures modified from the target structure.

Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

Abstract: A wafer inspection apparatus includes: a stage configured such that a wafer is arranged on the stage; an optical apparatus configured to align the wafer on the stage and generate an optical intensity image including an optical intensity profile; a focus adjusting unit configured to align light incident onto the wafer to be in-focus; and an image processor configured to integrate the optical intensity image with vertical level data of the in-focus to generate and analyze a three-dimensional (3D) image.