Patents by Inventor Sungyoun OH

Sungyoun OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8865852
    Abstract: A low-dielectric constant thin film prepared from a silsesquioxane polymer matrix as a precursor and a method for preparing the same which comprises preparing silsesquioxane sol by adding a stereoisomer of a multi reactive cyclosiloxane to an alkoxysilane are provided. The low-dielectric-constant thin film retains a stable film state even at a curing temperature of ?500° C. without being decomposed, a very uniform surface property with a low surface modulus, and a superior coatability as to be coatable smoothly with no crack even with a thickness of 500 nm or larger.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: October 21, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyung Youl Baek, Seung Sang Hwang, Seung-Sock Choi, Sungyoun Oh, He Seung Lee, Eun Kyeong Kim
  • Patent number: 8441005
    Abstract: Disclosed is a light-emitting material including a polysilsesquioxane having a ladder structure with photoactive groups bonded to a siloxane backbone. In addition to superior heat resistance and mechanical property, the light-emitting material provides improved cotability and film property when prepared into a thin film. Further, it provides higher luminous efficiency than the existing organic-based light-emitting material.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: May 14, 2013
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyung Youl Baek, Seung Sang Hwang, Seung-Sock Choi, Albert S. Lee, He Seung Lee, SungYoun Oh
  • Publication number: 20120004368
    Abstract: Disclosed are a low-dielectric-constant thin film prepared from a silsesquioxane polymer matrix as a precursor, the silsesquioxane polymer matrix being a silsesquioxane sol prepared by adding a stereoisomer of a multireactive cyclosiloxane to an alkoxysilane, and a method for preparing the same. The disclosed low-dielectric-constant thin film retains a stable film state even at a curing temperature of ˜500° C. without being decomposed. Also, it exhibits a very uniform surface property with a low surface modulus and has such a superior coatability as to be coatable smoothly with no crack even with a thickness of 500 nm or larger. In addition, the low-dielectric-constant thin film according to the present disclosure may exhibit low dielectric property while having superior surface modulus and hardness.
    Type: Application
    Filed: October 21, 2010
    Publication date: January 5, 2012
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyung Youl BAEK, Seung Sang HWANG, Seung-Sock CHOI, SUNGYOUN OH, He Seung LEE, Eun Kyeong KIM
  • Publication number: 20110260139
    Abstract: Disclosed is a light-emitting material including a polysilsesquioxane having a ladder structure with photoactive groups bonded to a siloxane backbone. In addition to superior heat resistance and mechanical property, the light-emitting material provides improved cotability and film property when prepared into a thin film. Further, it provides higher luminous efficiency than the existing organic-based light-emitting material.
    Type: Application
    Filed: September 14, 2010
    Publication date: October 27, 2011
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyung-Youl BAEK, Seung Sang HWANG, Seung-Sock CHOI, Albert S. LEE, He Seung LEE, SungYoun OH
  • Publication number: 20110251369
    Abstract: Disclosed are a polysilsesquioxane having a ladder structure with photoactive groups bonded at the siloxane main chain, and a method for preparing the same. Polysilsesquioxanes exhibiting superior thermal and mechanical properties and having various functionalities and characteristics depending on the photoactive groups introduced thereto may be prepared via a relatively simple method. The polysilsesquioxanes may be useful as an industrial material for organic-inorganic hybrid materials.
    Type: Application
    Filed: August 6, 2010
    Publication date: October 13, 2011
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seung Sang HWANG, Kyung Youl BAEK, Seung-Sock CHOI, He Seung LEE, Albert S. LEE, Sungyoun OH