Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

Abstract: A method of manufacturing an integrated circuit device, the method including forming a structure on a substrate, a semiconductor film and an insulating film being exposed in the structure, and selectively forming a silicon germanium layer only on the semiconductor film by using a process gas, the process gas including a disilane compound having at least two chlorine atoms, a germanium element-containing gas, and hydrogen gas.

Abstract: A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.

Abstract: A selective thin film formation method, comprising forming a structure on a substrate in which a first material film including silicon atoms and oxygen atoms and a second material film different from the first material film are exposed, selectively forming an inhibitor liner only on an exposed surface of the first material film among the first material film and the second material film by applying a compound represented by XmSi(NR1R2)n or (XaR3)mSi(NR1R2)n to the structure, and selectively forming a third material film only on the exposed surface of the second material film among the first material film and the second material film. X is a halogen atom, R1, R2, and R3 are each independently an alkyl group, an alkenyl group, an allyl group, or a heterocyclic group, a, m, and n are each independently an integer of 1 to 3, and m+n=4.

Abstract: A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):

Abstract: A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1): R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,??Chemical Formula (1) wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p?1, m+n?3, and p+q?3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

Abstract: Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1. In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms.

Abstract: Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1. In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.