Abstract: A piezoelectric structure is disclosed which includes a single crystal having piezoelectric coefficients d31 and d32 of opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, a first electrode coupled to the single crystal, and a second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes.

Abstract: A piezoelectric structure is disclosed which includes a single crystal having piezoelectric coefficients d31 and d32 of opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, a first electrode coupled to the single crystal, and a second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes.

Abstract: A piezoelectric structure is disclosed which includes a single crystal having piezoelectric coefficients d31 and d32 of opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, a first electrode coupled to the single crystal, and a second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes.

Abstract: A piezoelectric structure is disclosed which includes a single crystal having piezoelectric coefficients d31 and d32 of opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, a first electrode coupled to the single crystal, and a second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes.

Abstract: Asynchronous Global Positioning System (GPS) baseband processor architectures with a focus on minimizing power consumption. All subsystems run at their natural frequency without clocking and all signal processing is done on-the-fly.

Abstract: Asynchronous Global Positioning System (GPS) baseband processor architectures with a focus on minimizing power consumption. All subsystems run at their natural frequency without clocking and all signal processing is done on-the-fly.

Abstract: Asynchronous Global Positioning System (GPS) baseband processor architectures with a focus on minimizing power consumption. All subsystems run at their natural frequency without clocking and all signal processing is done on-the-fly.

Abstract: Methods, structures, devices and systems are disclosed for implementing optomechanical sensors in various configurations by using two optically coupled optical resonators or cavities that can be move or deform relative to each other. The optical coupling between first and second optical cavities to produce an optical resonance that varies with a spacing between the first and second optical cavities and provide the basis for the optomechanical sensing. Compact and integrated optomechanical sensors can be constructed to provide sensitive measurements for a range of applications, including motion sensing and other sensing applications.

Abstract: Asynchronous Global Positioning System (GPS) baseband processor architectures with a focus on minimizing power consumption. All subsystems run at their natural frequency without clocking and all signal processing is done on-the-fly.

Abstract: Methods, structures, devices and systems are disclosed for implementing optomechanical sensors in various configurations by using two optically coupled optical resonators or cavities that can be move or deform relative to each other. The optical coupling between first and second optical cavities to produce an optical resonance that varies with a spacing between the first and second optical cavities and provide the basis for the optomechanical sensing. Compact and integrated optomechanical sensors can be constructed to provide sensitive measurements for a range of applications, including motion sensing and other sensing applications.

Abstract: A resonator body has an inversion gate, an accumulation gate, and a center region. The resonator body also has a source contact coupled to the center region and a drain contact coupled to the center region. The resonator body further has a first dielectric layer coupled between the inversion gate and the center region. The resonator body also has a second dielectric layer coupled between the accumulation gate and the center region. A resonant body transistor is also disclosed. The resonant body transistor has an inversion gate electrode, an accumulation gate electrode, a source electrode, a drain electrode, and a plurality of anchor beams. The resonant body transistor also has a resonator body coupled-to and suspended-from the inversion gate electrode, the accumulation gate electrode, the source electrode, and the drain electrode by the plurality of anchor beams. A resonant body oscillator is also disclosed.

Abstract: A resonator body has an inversion gate, an accumulation gate, and a center region. The resonator body also has a source contact coupled to the center region and a drain contact coupled to the center region. The resonator body further has a first dielectric layer coupled between the inversion gate and the center region. The resonator body also has a second dielectric layer coupled between the accumulation gate and the center region. A resonant body transistor is also disclosed. The resonant body transistor has an inversion gate electrode, an accumulation gate electrode, a source electrode, a drain electrode, and a plurality of anchor beams. The resonant body transistor also has a resonator body coupled-to and suspended-from the inversion gate electrode, the accumulation gate electrode, the source electrode, and the drain electrode by the plurality of anchor beams. A resonant body oscillator is also disclosed.

Abstract: An electrostatic transducer for micromechanical resonators, in which the electrode gaps are filled with a dielectric material having a much higher permittivity than air. This internal electrostatic transducer has several advantages over both air-gap electrostatic and piezoelectric transduction; including lower motional impedance, compatibility with advanced scaled CMOS device technology, and extended dynamic range. In one aspect, in order to minimize energy losses, the dielectric material has an acoustic velocity which is matched to that of the resonator material. Internal electrostatic transduction can be adapted to excite and detect either vertical modes (perpendicular to the substrate) or lateral modes (in the plane of the substrate). Its increased transduction efficiency is of particular importance for reducing the motional resistance of the latter.