Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.

Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.

Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.

Abstract: Molybdenum metal powder, and method for production thereof. Molybdenum metal powder has surface-area-to-mass-ratios in a range of between about 1.0 meters2/gram (m2/g) and about 3.0 m2/g, as determined by BET analysis, in combination with a particle size wherein at least 30% of the particles have a particle size larger than a size +100 standard Tyler mesh sieve. In addition, molybdenum metal powder 10 may be further distinguished by flowability in a range of between about 29 seconds/50 grams (s/50 g) and about 64 s/50 g, as determined by a Hall Flowmeter. A method of producing molybdenum powder may comprise providing a supply of ammonium molybdate, heating the ammonium molybdate at an initial temperature in the presence of a reducing gas to produce an intermediate product, and heating the intermediate product at a final temperature in the presence of the reducing gas, producing molybdenum metal powder.

Abstract: The claimed invention involves a novel composition of matter comprising a mixture of Fe—Mo Intermetallic and copper oxide. A novel composition of matter of Fe—Mo Intermetallic, copper oxide and calcium carbonate is also claimed. The claimed invention also involves a novel friction lining additive comprising Fe—Mo Intermetallic and copper oxide for improved braking effectiveness. Fe—Mo Intermetallic, copper oxide and calcium carbonate may also be used as a friction lining additive according to the present invention. The claimed invention also includes a novel motor brush comprising Fe—Mo Intermetallic and copper oxide for improved wear. Fe—Mo Intermetallic, copper oxide and calcium carbonate may also be used as a motor brush additive according to the present invention.

Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.

Abstract: The claimed invention involves a novel aqueous polishing slurry for chemical-mechanical polishing that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO2 in an oxidizing agent. A method for polishing copper by chemical-mechanical polishing includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO2 in an oxidizing agent.

Abstract: The claimed invention involves a novel aqueous slurry for chemical-mechanical planarization that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO3 dissolved in an oxidizing agent. A method for polishing copper by chemical-mechanical planarization includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO3 dissolved in an oxidizing agent.