Patents by Inventor Sunil S. Murthy
Sunil S. Murthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9960346Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.Type: GrantFiled: May 7, 2015Date of Patent: May 1, 2018Assignee: Micron Technology, Inc.Inventors: Jonathan D. Harms, Wei Chen, Sunil S. Murthy, Witold Kula
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Publication number: 20170018705Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.Type: ApplicationFiled: July 13, 2015Publication date: January 19, 2017Inventors: Jonathan D. Harms, Wei Chen, Sunil S. Murthy
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Patent number: 9537088Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.Type: GrantFiled: July 13, 2015Date of Patent: January 3, 2017Assignee: Micron Technology, Inc.Inventors: Jonathan D. Harms, Wei Chen, Sunil S. Murthy
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Publication number: 20160329486Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.Type: ApplicationFiled: May 7, 2015Publication date: November 10, 2016Inventors: Jonathan D. Harms, Wei Chen, Sunil S. Murthy, Witold Kula
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Patent number: 9478735Abstract: Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.Type: GrantFiled: June 22, 2015Date of Patent: October 25, 2016Assignee: Micron Technology, Inc.Inventors: Wei Chen, Witold Kula, Jonathan D. Harms, Sunil S. Murthy
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Patent number: 9373779Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.Type: GrantFiled: December 8, 2014Date of Patent: June 21, 2016Assignee: Micron Technology, Inc.Inventors: Wei Chen, Witold Kula, Jonathan D. Harms, Sunil S. Murthy
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Publication number: 20160163967Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.Type: ApplicationFiled: December 8, 2014Publication date: June 9, 2016Inventors: Wei Chen, Witold Kula, Jonathan D. Harms, Sunil S. Murthy
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Patent number: 9344345Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.Type: GrantFiled: March 19, 2014Date of Patent: May 17, 2016Assignee: Micron Technology, Inc.Inventors: Jonathan D. Harms, Wei Chen, Sunil S. Murthy
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Publication number: 20150270480Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.Type: ApplicationFiled: March 19, 2014Publication date: September 24, 2015Applicant: Micron Technology, Inc.Inventors: Jonathan D. Harms, Wei Chen, Sunil S. Murthy
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Patent number: 7556086Abstract: Device for enhancing cooling of electronic circuit components that is substantially or fully independent of orientation. A thin profile thermosyphon heat spreader mounted to an electronics package comprises a central evaporator in hydraulic communication with a peripheral condenser, both at least partially filled with liquid coolant. A very high effective thermal conductivity results. Performance is optimized by keeping the evaporator substantially full at all orientations while leaving a void for accumulation of vapor in the condenser. A cover plate and a parallel base plate of generally similar dimension form the evaporator and condenser. Optionally, an opening in the base plate is sealed against the electronics package and places the heat-dissipating component in direct contact with the liquid coolant. Alternatively, the base plate may be formed with the electronics package from a single piece of material. A boiling enhancement structure is provided in the evaporator to encourage vapor bubble nucleation.Type: GrantFiled: April 6, 2001Date of Patent: July 7, 2009Assignee: University of Maryland, College ParkInventors: Yogendra Joshi, Sunil S. Murthy, Wataru Nakayama
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Publication number: 20020179284Abstract: Device for enhancing cooling of electronic circuit components that is substantially or fully independent of orientation. A thin profile thermosyphon heat spreader mounted to an electronics package comprises a central evaporator in hydraulic communication with a peripheral condenser, both at least partially filled with liquid coolant. A very high effective thermal conductivity results. Performance is optimized by keeping the evaporator substantially full at all orientations while leaving a void for accumulation of vapor in the condenser. A cover plate and a parallel base plate of generally similar dimension form the evaporator and condenser. Optionally, an opening in the base plate is sealed against the electronics package and places the heat-dissipating component in direct contact with the liquid coolant. Alternatively, the base plate may be formed with the electronics package from a single piece of material. A boiling enhancement structure is provided in the evaporator to encourage vapor bubble nucleation.Type: ApplicationFiled: April 6, 2001Publication date: December 5, 2002Inventors: Yogendra Joshi, Sunil S. Murthy, Wataru Nakayama