Patents by Inventor Sunil Srinivasan
Sunil Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10555412Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: May 10, 2018Date of Patent: February 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Olivier Luere, Rajinder Dhindsa, James Rogers, Sunil Srinivasan, Anurag Kumar Mishra
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Patent number: 10553404Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.Type: GrantFiled: February 1, 2017Date of Patent: February 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Olivier Luere, Leonid Dorf, Sunil Srinivasan, Rajinder Dhindsa, James Rogers, Denis M. Koosau
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Publication number: 20200027717Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.Type: ApplicationFiled: April 22, 2019Publication date: January 23, 2020Inventors: Sang Wook PARK, Sunil SRINIVASAN, Rajinder DHINDSA, Jonathan Sungehul KIM, Lin YU, Zhonghua YAO, Olivier LUERE
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Patent number: 10504702Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.Type: GrantFiled: July 3, 2018Date of Patent: December 10, 2019Assignee: Applied Materials, Inc.Inventors: Olivier Luere, Leonid Dorf, Rajinder Dhindsa, Sunil Srinivasan, Denis M. Koosau, James Rogers
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Publication number: 20190350072Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: ApplicationFiled: May 10, 2018Publication date: November 14, 2019Inventors: Leonid DORF, Olivier LUERE, Rajinder DHINDSA, James ROGERS, Sunil SRINIVASAN, Anurag Kumar MISHRA
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Patent number: 10448495Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: April 25, 2019Date of Patent: October 15, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Olivier Luere, Rajinder Dhindsa, James Rogers, Sunil Srinivasan, Anurag Kumar Mishra
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Patent number: 10448494Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: April 25, 2019Date of Patent: October 15, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Olivier Luere, Rajinder Dhindsa, James Rogers, Sunil Srinivasan, Anurag Kumar Mishra
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Publication number: 20190228952Abstract: Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The methods and related equipment described herein can improve the formation of the structures on substrates by controlling the curvature of the plasma-sheath boundary near the periphery of the substrate, for example, by generating a substantially flat plasma-sheath boundary over the entire substrate (i.e., center to edge). The methods and related equipment described below can provide control over the curvature of the plasma-sheath boundary, including generation of the flat plasma-sheath boundary by applying RF power to an edge ring surrounding the substrate using a separate and independent RF power source.Type: ApplicationFiled: January 22, 2019Publication date: July 25, 2019Inventors: Leonid DORF, Anurag Kumar MISHRA, Olivier LUERE, Rajinder DHINDSA, James ROGERS, Denis M. KOOSAU, Sunil SRINIVASAN
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Publication number: 20180315583Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.Type: ApplicationFiled: July 3, 2018Publication date: November 1, 2018Inventors: Olivier LUERE, Leonid DORF, Rajinder DHINDSA, Sunil SRINIVASAN, Denis M. KOOSAU, James ROGERS
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Patent number: 10103010Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.Type: GrantFiled: April 12, 2018Date of Patent: October 16, 2018Assignee: Applied Materials, Inc.Inventors: Olivier Luere, Leonid Dorf, Rajinder Dhindsa, Sunil Srinivasan, Denis M. Koosau, James Rogers
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Publication number: 20180233334Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.Type: ApplicationFiled: April 12, 2018Publication date: August 16, 2018Inventors: Olivier LUERE, Leonid DORF, Rajinder DHINDSA, Sunil SRINIVASAN, Denis M. KOOSAU, James ROGERS
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Publication number: 20180218933Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.Type: ApplicationFiled: February 1, 2017Publication date: August 2, 2018Inventors: Olivier LUERE, Leonid DORF, Sunil SRINIVASAN, Rajinder DHINDSA, James ROGERS, Denis M. KOOSAU
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Patent number: 9947517Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.Type: GrantFiled: December 16, 2016Date of Patent: April 17, 2018Assignee: Applied Materials, Inc.Inventors: Olivier Luere, Leonid Dorf, Rajinder Dhindsa, Sunil Srinivasan, Denis M. Koosau, James Rogers
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Publication number: 20170358431Abstract: Systems and methods for controlling a voltage waveform at a substrate during plasma processing include applying a shaped pulse bias waveform to a substrate support, the substrate support including an electrostatic chuck, a chucking pole, a substrate support surface and an electrode separated from the substrate support surface by a layer of dielectric material. The systems and methods further include capturing a voltage representative of a voltage at a substrate positioned on the substrate support surface and iteratively adjusting the shaped pulse bias waveform based on the captured signal. In a plasma processing system a thickness and a composition of a layer of dielectric material separating the electrode and the substrate support surface can be selected such that a capacitance between the electrode and the substrate support surface is at least an order of magnitude greater than a capacitance between the substrate support surface and a plasma surface.Type: ApplicationFiled: June 8, 2017Publication date: December 14, 2017Inventors: LEONID DORF, JAMES HUGH ROGERS, OLIVIER LUERE, TRAVIS KOH, RAJINDER DHINDSA, SUNIL SRINIVASAN
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Publication number: 20170256435Abstract: The implementations described herein generally relate to a process kit suitable for use in a semiconductor process chamber, which reduces edge effects and widens the processing window with a single edge ring as compared to conventional process kits. The process kit generally includes an edge ring disposed adjacent to and surrounding a perimeter of a semiconductor substrate in a plasma chamber. A dimension of a gap between the substrate and the edge ring is less than about 1000 ?m, and a height difference between the substrate and the edge ring is less than about (+/?) 300 ?m. The resistivity of the ring is less than about 50 Ohm-cm.Type: ApplicationFiled: February 20, 2017Publication date: September 7, 2017Inventors: Olivier JOUBERT, Jason A. KENNEY, Sunil SRINIVASAN, James ROGERS, Rajinder DHINDSA, Vedapuram S. ACHUTHARAMAN, Olivier LUERE
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Publication number: 20170213758Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.Type: ApplicationFiled: January 6, 2017Publication date: July 27, 2017Inventors: Michael R. RICE, Yogananda SARODE VISHWANATH, Sunil SRINIVASAN, Rajinder DHINDSA, Steven E. BABAYAN, Olivier LUERE, Denis M. KOOSAU, Imad YOUSIF
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Publication number: 20160056059Abstract: Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The second surface is configured to face a processing region of the semiconductor process chamber. A treated area of the second surface includes relatively flatter peaks than an untreated area of the machined surfaces and exhibits an average roughness between 1 and 30 micro-inches.Type: ApplicationFiled: August 21, 2015Publication date: February 25, 2016Applicant: Applied Materials, Inc.Inventors: Jennifer SUN, Biraja KANUNGO, Sunil SRINIVASAN, Jinhan CHOI, Anisul H. KHAN
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Patent number: 8747684Abstract: A method and apparatus for plasma etching a workpiece, such as a semiconductor wafer, including a thin film stack having a top film disposed over a bottom film with an intervening middle film there between. Etch selectivity between the top and bottom films may be as low as between 1:1 and 2:1 and a first carbon-lean gas chemistry is used to etch through the top film, a second carbon-lean gas chemistry is used to etch through the middle film, and the bottom film is etched through by alternating between depositing a polymer passivation on the top film using a carbon-rich gas chemistry and an etching of the bottom film with a third carbon-lean gas chemistry, which may be the same as the first carbon-lean gas chemistry.Type: GrantFiled: August 20, 2010Date of Patent: June 10, 2014Assignee: Applied Materials, Inc.Inventors: Sunil Srinivasan, Jinhan Choi, Anisul H. Khan
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Patent number: 8187483Abstract: The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.Type: GrantFiled: August 6, 2007Date of Patent: May 29, 2012Inventors: Jason Plumhoff, Sunil Srinivasan, David Johnson, Russell Westerman
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Patent number: D797691Type: GrantFiled: April 14, 2016Date of Patent: September 19, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Olivier Joubert, Jason A. Kenney, Sunil Srinivasan, James Rogers, Rajinder Dhindsa, Vedapuram S. Achutharaman, Olivier Luere