Patents by Inventor Suning Xie
Suning Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12352901Abstract: A characterization circuit for an optical device includes: an optical device, a switch, a switch driver, one or more resistors, and one or more capacitors. The switch driver is configured to receive a trigger pulse from an external pulse generator and to provide the trigger pulse to the switch, which causes the switch to be in an on state. The one or more capacitors are configured to, when the switch is in an off state, receive a charge current (e.g., with a greater than 50 nanoseconds rise time) from an external driver voltage source via the one or more resistors; and, when the switch is in the on state, discharge a current pulse (e.g., with a less than 10 nanosecond pulse width) to the optical device. The optical device is configured to receive the current pulse and to emit, based on the current pulse, an optical output pulse.Type: GrantFiled: May 28, 2021Date of Patent: July 8, 2025Assignee: Lumentum Operations LLCInventors: Suning Xie, Abhinav Rohit, Lucas Morales, Mikhail Dolganov, Peter Tran
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Publication number: 20220291341Abstract: A characterization circuit for an optical device includes: an optical device, a switch, a switch driver, one or more resistors, and one or more capacitors. The switch driver is configured to receive a trigger pulse from an external pulse generator and to provide the trigger pulse to the switch, which causes the switch to be in an on state. The one or more capacitors are configured to, when the switch is in an off state, receive a charge current (e.g., with a greater than 50 nanoseconds rise time) from an external driver voltage source via the one or more resistors; and, when the switch is in the on state, discharge a current pulse (e.g., with a less than 10 nanosecond pulse width) to the optical device. The optical device is configured to receive the current pulse and to emit, based on the current pulse, an optical output pulse.Type: ApplicationFiled: May 28, 2021Publication date: September 15, 2022Inventors: Suning XIE, Abhinav ROHIT, Lucas MORALES, Mikhail DOLGANOV, Peter TRAN
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Publication number: 20120012864Abstract: A light source includes a substrate, a light emitting diode on the substrate within a cavity, a plate over the cavity, a phosphor layer on the plate, and a color filter on the plate between the phosphor layer and the cavity.Type: ApplicationFiled: July 14, 2010Publication date: January 19, 2012Inventors: Suning Xie, Jianhua Li, Chao-Kun Lin
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Patent number: 7011979Abstract: A method for detecting a passivation pinhole includes forming an oxide vertical cavity surface-emitting laser (VCSEL) having an oxidation cavity, forming a passivation layer over a surface of the oxidation cavity, exposing the oxide VCSEL to an etchant vapor, and inspecting the oxide VCSEL for a defect caused by the etchant vapor.Type: GrantFiled: March 12, 2003Date of Patent: March 14, 2006Inventors: Gregory N. DeBrabander, Robert W. Herrick, Suning Xie, Matthew C. Slater
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Patent number: 6982182Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.Type: GrantFiled: July 14, 2003Date of Patent: January 3, 2006Assignee: Agilent Technologies, Inc.Inventors: Seongsin Kim, Wilson H. Widjaja, Suning Xie
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Publication number: 20050175051Abstract: A method for detecting a passivation pinhole includes forming an oxide vertical cavity surface-emitting laser (VCSEL) having an oxidation cavity, forming a passivation layer over a surface of the oxidation cavity, exposing the oxide VCSEL to an etchant vapor, and inspecting the oxide VCSEL for a defect caused by the etchant vapor.Type: ApplicationFiled: March 31, 2005Publication date: August 11, 2005Inventors: Gregory DeBrabander, Robert Herrick, Suning Xie, Matthew Slater
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Patent number: 6862309Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).Type: GrantFiled: February 6, 2003Date of Patent: March 1, 2005Assignee: Agilent Technologies, Inc.Inventors: Gregory N. DeBrabander, An-Nien Cheng, Suning Xie, Wilson Hasan Widjaja
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Publication number: 20040180454Abstract: A method for detecting a passivation pinhole includes forming an oxide vertical cavity surface-emitting laser (VCSEL) having an oxidation cavity, forming a passivation layer over a surface of the oxidation cavity, exposing the oxide VCSEL to an etchant vapor, and inspecting the oxide VCSEL for a defect caused by the etchant vapor.Type: ApplicationFiled: March 12, 2003Publication date: September 16, 2004Inventors: Gregory N. DeBrabander, Robert W. Herrick, Suning Xie, Matthew C. Slater
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Publication number: 20040156410Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).Type: ApplicationFiled: February 6, 2003Publication date: August 12, 2004Inventors: Gregory N. DeBrabander, An-Nien Cheng, Suning Xie, Wilson Hasan Widjaja
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Patent number: 6680964Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.Type: GrantFiled: December 7, 2001Date of Patent: January 20, 2004Assignee: Agilent Technologies, Inc.Inventors: Seongsin Kim, Wilson H. Widjaja, Suning Xie
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Publication number: 20040004984Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.Type: ApplicationFiled: July 14, 2003Publication date: January 8, 2004Inventors: Seongsin Kim, Wilson H. Widjaja, Suning Xie
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Publication number: 20030108075Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.Type: ApplicationFiled: December 7, 2001Publication date: June 12, 2003Inventors: Seongsin Kim, Wilson H. Widjaja, Suning Xie