Abstract: A method for establishing a plurality of protocol data unit (PDU) sessions between a user equipment (UE) and a data network (DN) by the UE may comprise transmitting a message to establish the plurality of PDU sessions to at least one network function (NF) of a plurality of NFs, exchanging a signal to establish the plurality of PDU sessions among the UE, a radio access network (RAN), and the plurality of NFs based on the message, and establishing the plurality of PDU sessions between the UE and the DN according to predetermined priority and based on the signal, wherein each of the plurality of PDU sessions corresponds to a network slice (NS) for a particular service, wherein the message includes information about the particular service corresponding to the plurality of PDU sessions, and wherein the priority is determined based on the information about the particular service.

Abstract: The present disclosure relates to a 5G or pre-5G communication system for supporting higher data transmission rates beyond 4G communication systems such as LTE systems.

Abstract: Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics.

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Abstract: Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer.

Abstract: Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics.

Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract: This invention provides a method for preparing a polymethylmethacrylate spherical bead and in particular, it provides a method for preparing a polymethylmethacrylate spherical bead characterized in that it is prepared by preparing polymethylmethacrylate by polymerizing methyl-methacrylate monomers, evaporating remaining methylmethacrylate monomers by raising temperature up to at least 100° C. after the polymerization reaction, and washing the polymethylmethacrylate with a mixed solvent of ethanol and water and vacuum drying them.

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract: The present invention relates to titanium dioxide powder with a large specific surface area, a method for preparing thereof, and a use of the titanium dioxide as a photocatalyst, and more particularly, discloses a method for the preparation of titanium dioxide powder comprised of the steps of adding ice pieces or icy distilled water to pure titanium tetrachloride (TiCl4) to give an aqueous titanylchloride solution of 1.5 M or higher; diluting the aqueous titanylchloride with distilled water; obtaining precipitates from the diluted aqueous titanylchloride solution by standing for 2-20 hours at 15-70° C.; and filtering, washing and drying the above precipitates to give downy hair-shaped TiO2 powder with a specific surface area of 130-200 m2/g.

Abstract: The invention presented herein relates to a zirconium alloy with superior corrosion resistance and high strength for use in fuel rod claddings, spacer grids and structural components in reactor core of light water and heavy water nuclear power plant. The zirconium alloy of this invention with superior corrosion resistance and high strength comprises an alloy composition as follows: niobium in a range of 0.15 to 0.25 wt. %; tin in a range of 1.10 to 1.40 wt. %; iron in a range of 0.35 to 0.45; chromium in a range of 0.15 to 0.25; one element selected from the group consisting of molybdenum, copper and manganese in a range of 0.08 to 0.12 wt. %; oxygen in a range of 0.10 to 0.14 wt. %; and the balance being zirconium.