Abstract: A method of manufacturing a semiconductor device including a die pad section, a first semiconductor chip having a surface on which a first electrode section is formed, a second semiconductor chip having a surface on which a second electrode section is formed, a support member having a surface, lead terminal sections, and a resin encapsulating body, the method including fixing a back surface of the first semiconductor chip and the surface of the support member to the die pad section; fixing a back surface of the second semiconductor chip to the surface of the first semiconductor chip and the surface of the support member; electrically connecting the first and second electrode sections respectively to the lead terminal sections; and sealing the die pad section, the first and second semiconductor chips and the support member with a resin.

Abstract: In order to mount a semiconductor element of a small electrode pitch, an inner lead portion of a lead frame is made thin and narrow to reduce a pitch. Even a semiconductor element in which an electrode arrangement pitch is smaller than conventionally can be mounted by flip chip bonding, the number of components such as a wire is reduced, and a possibility of wire cutting or the like caused by vibration or the like during semiconductor device assembling is reduced. A fine inner lead formation scheduled area of a conductor plate is half-etched to make a plate thickness smaller than that in a peripheral area. Then, the fine inner lead formation scheduled area is patterned to form a fine inner lead portion 22. Especially, a width of a tip 22a of the fine inner lead portion 22 is set smaller than those of a middle inner lead portion 23 and an outer lead portion 25.

Abstract: A method of manufacturing a semiconductor device including a die pad section, a first semiconductor chip having a surface on which a first electrode section is formed, a second semiconductor chip having a surface on which a second electrode section is formed, a support member having a surface, lead terminal sections, and a resin encapsulating body, the method including fixing a back surface of the first semiconductor chip and the surface of the support member to the die pad section; fixing a back surface of the second semiconductor chip to the surface of the first semiconductor chip and the surface of the support member; electrically connecting the first and second electrode sections respectively to the lead terminal sections; and sealing the die pad section, the first and second semiconductor chips and the support member with a resin.

Abstract: A semiconductor device includes a die pad section, a first semiconductor chip having a surface formed with a first electrode section and a back surface fixed to the die pad section, a second semiconductor chip having a surface formed with a second electrode section and a back surface fixed to the surface of the first semiconductor chip, a support member having a surface fixed to the back surface of the second semiconductor chip and a back surface fixed to the die pad section, lead terminal sections respectively electrically connected to the first and second electrode sections, and a resin encapsulating body that seals the die pad section, the first and second semiconductor chips and the support member.

Abstract: The present invention provides a semiconductor device comprising a die pad section (200), a first semiconductor chip (4) having a surface (41) formed with a first electrode section (47) and a back surface (42) fixed to the die pad section (200), a second semiconductor chip (5) having a surface (51) formed with a second electrode section (57) and a back surface (52) fixed to the surface (41) of the first semiconductor chip (4), a support member (300) having a surface (301) fixed to the back surface of the second semiconductor chip (5) and a back surface (302) fixed to the die pad section (200), lead terminal sections (210, 220) respectively electrically connected to the first and second electrode sections (47, 57), and a resin encapsulating body (10) that seals the die pad section (200), the first and second semiconductor chips (4, 5) and the support member (300).

Abstract: In order to mount a semiconductor element of a small electrode pitch, an inner lead portion of a lead frame is made thin and narrow to reduce a pitch. Even a semiconductor element in which an electrode arrangement pitch is smaller than conventionally can be mounted by flip chip bonding, the number of components such as a wire is reduced, and a possibility of wire cutting or the like caused by vibration or the like during semiconductor device assembling is reduced. A fine inner lead formation scheduled area of a conductor plate is half-etched to make a plate thickness smaller than that in a peripheral area. Then, the fine inner lead formation scheduled area is patterned to form a fine inner lead portion 22. Especially, a width of a tip 22a of the fine inner lead portion 22 is set smaller than those of a middle inner lead portion 23 and an outer lead portion 25.

Abstract: This invention provides a semiconductor device and its manufacturing method capable of mounting a plurality of semiconductor elements without reducing the reliability of the semiconductor device.

Abstract: This invention provides a semiconductor device and its manufacturing method capable of mounting a plurality of semiconductor elements without reducing the reliability of the semiconductor device.