Abstract: The present disclosure discloses a capacitorless 3D DRAM device including a write bit line extending in a vertical direction, a write word line extending in a horizontal direction, a write transistor connected to the write bit line and the write word line, and defined to include a first channel material layer, a first gate insulating layer, and a portion of the write word line, a read bit line extending in the vertical direction, a read word line extending in the horizontal direction, and a read transistor connected to the read bit line and the read word line.

Abstract: A sputtering apparatus includes a plurality of targets arranged to face each other and a magnetic unit producing magnetic field. A space between the targets is disposed on a substrate on which a deposition is being made during a sputtering process. The magnetic unit includes at least two magnet members. The space between the targets is surrounded by a space between the at least two magnet members. Each of the magnet members includes at least one first magnet and at least one second magnet separated from each other with an interval.

Abstract: A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the sacrificial dielectric pattern, forming a storage node, supported by the support layer, in the storage node hole, performing a full dip-out process to expose the outer wall of the storage node, and performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer.

Abstract: A semiconductor device having a spacer with an air gap is manufactured by forming a first conductive pattern over a semiconductor substrate; forming a spacer on sidewalls of the first conductive pattern; forming a sacrifice layer on sidewall of the spacer, the sacrifice layer having a different etching selectivity with the spacer; forming a second conductive pattern to fill a space between the first conductive pattern and the first conductive pattern; and forming an air gap between the first and second conductive patterns by selectively removing the sacrifice layer.

Abstract: A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the sacrificial dielectric pattern, forming a storage node, supported by the support layer, in the storage node hole, performing a full dip-out process to expose the outer wall of the storage node, and performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer.

Abstract: A buried gate in a semiconductor device and a method for fabricating the same are presented. The method includes: forming a gate trench in an active region of a semiconductor substrate; filling the gate trench with a barrier metal film and a metal film; recessing the metal film and the barrier metal film to form buried gate electrodes that partially fill the gate trench; recessing the barrier metal film of the buried gate electrode below the surface of the metal film; and filling an exposed part of the buried gate electrode and the gate trench with a capping film.

Abstract: Provided are a method, medium, and apparatus for docking a mobile robot.